SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995 ✪
FEATURES
* 100 Volt VDS
*R
DS(on)=10Ω
COMPLEMENTARY TYPE - ZVP3310F
PARTMARKING DETAIL - MF
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Continuous Drain Current at Tamb=25°C ID100 mA
Pulsed Drain Current IDM 2A
Gate-Source Voltage VGS ±20 V
Power Dissipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS 100 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 0.8 2.4 V ID=1mA, VDS=V
GS
Gate-Body Leakage IGSS 20 nA VGS=±20V, VDS=0V
Zero Gate Voltage
Drain Current
IDSS 1
50 µA
µA
VDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 500 mA VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1)
RDS(on) 10 ΩVGS=10V, ID=500mA
Forward Transconductance
(1)(2)
gfs 100 mS VDS=25V, ID=500mA
Input Capacitance (2) Ciss 40 pF
Common Source
Output Capacitance (2)
Coss 15 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2)
Crss 5pF
Turn-On Delay Time (2)(3) td(on) 3typ 5 ns
VDD ≈25V, ID=500mA
Rise Time (2)(3) tr5typ 7 ns
Turn-Off Delay Time (2)(3) td(off) 4typ 6 ns
Fall Time (2)(3) tf5typ 7 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ωsource impedance and <5ns rise time on a pulse generator
ZVN3310F
D
G
S
SOT23
3 - 396
TYPICAL C HAR ACTERISTICS
0246810
Saturation Charac teristi cs
I
D(On)
-On-State Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
11020
1.6
1.2
0.4
0
0.8
1.4
1.0
0.6
0.2
5V
VGS=
10V
7V
8V
6V
4V
3V
9V
ID=
1A
0.5A
0.2A
1
10
100
Normalised RDS(on) and VGS(th) vs Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
ID=-0.5A
T-Temperature (C°)
0.4 -80 -60
Transconductance v drain current
ID- Drain Current (Amps)
g
fs
-Transconductance (mS)
00.2 0.4 0.6 0.8 1.0 1.2
80
0
40
120
160
VDS= 25V
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Coss
Ciss
Crss
010 20 30 40 50
0
30
20
10
40
50
Q-Charge (nC)
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
VDS=
20V
ID=0.6A
50V 80V
0.2 0.4 0.6 0.8 1.0 1.2
ZVN3310F
3 - 397
