Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers--from ultra-mobile notebooks to powerful servers--and in a wide range of handheld devices such as smartphones and tablets. Samsung also delivers the industry's widest line of storage products from the consumer to the enterprise level. These include optical and hard disk drives as well as flash storage, such as the all-flash Solid State Drive and a range of embedded and removable flash storage products. Markets DRAM SRAM Mobile / Wireless Notebook PCs Desktop PCs / Workstations Servers Networking / Communications Consumer Electronics samsung.com/us/business/oem-solutions FLASH ASIC LOGIC TFT/LCD ODD/HDD DRAM Pages 4-12 * * * * DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM * Mobile DRAM * Graphics DDR SDRAM * DRAM Ordering Information FLASH Pages 13-15 samsung.com/semi/flash * * * * SLC Flash MLC Flash SD and microSD Cards moviNANDTM (eMMC) * Solid State Drive * SATA SSD * Flash Ordering Information HIGH-SPEED SRAM Pages 16-20 samsung.com/semi/sram * * * * Asychronous Synchronous NtRAMTM Late-Write RR SRAM * DDR Synchronous SRAM * QDR Synchronous SRAM * SRAM Ordering Information MULTI-CHIP PACKAGE Page 21 samsung.com/semi/mcp * NAND + MDDR * moviNAND + LPDDR2 * NOR + UtRAM storage Pages 22-24 samsung.com/greenmemory * Solid State Drive * SATA SSD samsung.com/hdd * Hard Disk Drive samsungodd.com * Optical Disk Drive LCD Pages 25-27 tftlcd.com * Exclusive Digital samsung.com/semi/dram 1H 2011 Information Display (E-DID) * Performance Digital Information Display (P-DID) * Basic Digital Information Display (B-DID) * Tablets * Notebooks/PCs * Monitors 3 DRAM samsung.com/semi/dram DDR3 SDRAM REGISTERED MODULES Density Voltage Organization Part Number 1GB 2GB 4GB 1.5V 1.5V 1.5V 128Mx72 256Mx72 512Mx72 Composition Compliance Speed (Mbps) Ranks Production M393B2873FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B2873GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 9 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 1 Now M393B5673FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free M393B5673GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 18 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 1.5V 1Gx72 16GB 1.5V 2Gx72 8GB 1.5V 1Gx72 16GB 1.5V 2Gx72 32GB 1.5V 4Gx72 8GB 1.35V 1Gx72 16GB 1.35V 2Gx72 32GB 1.35V 4Gx72 2GB 1.35V 256Mx72 4GB 8GB 16GB Notes: 4 1.35V 1.35V 1.35V 512Mx72 1Gx72 2Gx72 Now Now M393B5670FH0-C(F8/H9/K0)(04/05) 1Gb (256M x4) * 18 Lead Free & Halogen Free 1Gb (256M x4) * 18 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 M393B5773CH0-C(F8/H9/K0)(04/05) 2Gb (256M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B5773DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 9 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now 1066/1333/1600 M393B5173FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 36 Lead Free & Halogen Free M393B5173GB0-C(F8/H9)(08/09) 1Gb (128M x8) * 36 Lead Free & Halogen Free, Flip Chip 1066/1333 1066/1333/1600 1 Now 1 Now 4 Now 4 Now M393B5170FH0-C(F8/H9/K0)(04/05) 1Gb (256M x4) * 36 Lead Free & Halogen Free M393B5170GB0-C(F8/H9/K0/MA)(08/09) 1Gb (256M x4) * 36 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 M393B5273CH0-C(F8/H9/K0)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B5273DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 2 Now 2 Now 2 Now 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now M393B1K73CH0-C(F8/H9)(04/05) 2Gb (256M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B1K73DH0-C(F8/H9)(08/09) 2Gb (256M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B1K70CH0-C(F8/H9/K0)(04/05) 2Gb (512M x4) * 36 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B1K70DH0-C(F8/H9/K0/MA)(08/09) 2Gb (512M x4) * 36 Lead Free & Halogen Free 1066/1333/1600/1866 2 Now M393B2K70CM0-C(F8/H9)(04/05) 2Gb DDP (1024M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B2K70DM0-C(F8/H9)(08/09) 2Gb DDP (1024M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B1G70BH0-C(F8/H9/K0/MA)(08/09) 4Gb (1G x4) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now M393B1G73BH0-C(F8/H9/K0/MA)(08/09) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 2 Now M393B2G70AH0-C(F8/H9/K0)(04/05) 4Gb (1024M x4) * 36 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B2G70BH0-C(F8/H9/K0)(08/09) 4Gb (1024M x4) * 36 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B2G73AH0-C(F8/H9)(04/05) 4Gb (512M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B2G73BH0-C(F8/H9)(08/09) 4Gb (512M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B4G70AM0-C(F8/H9)(04/05) 4Gb DDP (2048M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B4G70BM0-C(F8/H9)(08/09) 4Gb DDP (2048M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B1G70BH0-Y(F8/H9/K0/MA)(08/09) 4Gb (1G x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B1G73BH0-Y(F8/H9/K0/MA)(08/09) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B2G70AH0-Y(F8/H9)(04/05) 4Gb (1024M x4) * 36 Lead Free & Halogen Free 1066/1333 2 Now M393B2G70BH0-Y(F8/H9/K0)(08/09) 4Gb (1024M x4) * 36 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B2G73AH0-Y(F8/H9)(04/05) 4Gb (512M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B2G73AH0-Y(F8/H9)(04/05) 4Gb (512M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B4G70AM0-Y(F8/H9)(04/05) 4Gb DDP (2048M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B4G70BM0-Y(F8/H9)(08/09) 4Gb DDP (2048M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B5773CH0-Y(F8/H9/K0)(04/05) 2Gb (256M x4) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B5773DH0-Y(F8/H9/K0)(08/09) 2Gb (256M x4) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B5173FH0-Y(F8/H9)(04/05) 1Gb (128M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B5173GB0-Y(F8/H9)(08/09) 1Gb (128M x8) * 36 Lead Free & Halogen Free, Flip Chip 1066/1333 4 Now M393B5170FH0-Y(F8/H9/K0)(04/05) 1Gb (256M x4) * 36 Lead Free & Halogen Free M393B5170GB0-Y(F8/H9/K0)(08/09) 1Gb (256M x4) * 36 Lead Free & Halogen Free, Flip Chip 1066/1333/1600 1066/1333 2 Now 2 Now M393B5273CH0-Y(F8/H9/K0)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B5273DH0-Y(F8/H9/K0)(08/09) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B5270CH0-Y(F8/H9/K0)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B5270DH0-Y(F8/H9/K0)(08/09) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B1K73CH0-Y(F8/H9)(04/05) 2Gb (256M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B1K73DH0-Y(F8/H9)(08/09) 2Gb (256M x8) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B1K70CH0-Y(F8/H9/K0)(04/05) 2Gb (512M x4) * 36 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B1K70DH0-Y(F8/H9/K0)(08/09) 2Gb (512M x4) * 36 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B2K70CM0-Y(F8/H9)(04/05) 2Gb DDP (1024M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now M393B2K70DM0-Y(F8/H9)(08/09) 2Gb DDP (1024M x4) * 36 Lead Free & Halogen Free 1066/1333 4 Now F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) DDR3 SDRAM 1066/1333/1600 2 2 M393B5670GB0-C(F8/H9/K0/MA)(08/09) M393B5270CH0-C(F8/H9/K0)(04/05) 8GB 1066/1333/1600 04 = IDT B0 register 05 = Inphi C0 register 08 = IDT 09 = Inphi * K0 (1600Mbps) available in ES only 1H 2011 samsung.com/semi/dram Density Voltage Organization 1GB 1.5V 128Mx72 2GB 4GB 8GB 16GB 8GB 16GB 2GB 4GB 8GB Notes: 1.5V 1.5V 1.5V 1.5V 1.35V 1.35V 1.35V 1.35V 1.35V 256Mx72 512Mx72 1Gx72 2Gx72 1Gx72 2Gx72 256Mx72 512Mx72 1Gx72 F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) samsung.com/semi/dram Part Number Composition Compliance Speed (Mbps) Ranks Production M392B2873FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now M392B2873GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 9 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 1 Now M392B5673FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333/K0 2 Now M392B5673GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 18 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 2 Now M392B5670FH0-C(F8/H9/K0)(04/05) 1Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M392B5670GB0-C(F8/H9/K0/MA)(08/09) 1Gb (256M x8) * 18 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 1 Now M392B5773CH0-C(F8/H9/K0)(04/05) Lead Free & Halogen Free 1066/1333/1600 1 Now 2Gb (256M x8) * 9 M392B5773DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 9 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now M392B5170FM0-C(F8/H9/K0)(04/05) 1Gb DDP (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M392B5273CH0-C(F8/H9/K0)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M392B5273DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 2 Now M392B5270CH0-C(F8/H9/K0)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M392B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now M392B1K73CM0-C(F8/H9)(04/05) 2Gb DDP (512M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now M392B1K73DM0-C(F8/H9)(08/09) 2Gb DDP (512M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now M392B1K70CM0-C(F8/H9/K0)(04/05) 2Gb DDP (1024M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M392B1K70DM0-C(F8/H9/K0/MA)(08/09) 2Gb DDP (1024M x4) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 2 Now M392B1G73BH0-C(F8/H9/K0/MA)(08/09) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now M392B1G70BH0-C(F8/H9/K0/MA)(08/09) 4Gb (1024M x4) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now M392B2G70AM0-C(F8/H9/K0)(04/05) 4Gb DDP (2048M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M392B2G70BM0-C(F8/H9/K0/MA)(08/09) 4Gb DDP (2048M x4) * 18 Lead Free & Halogen Free 1066/1333/1600/1866 2 Now M392B2G73AM0-C(F8/H9)(04/05) 4Gb DDP (1024M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now M392B2G73BM0-C(F8/H9)(08/09) 4Gb DDP (1024M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now M392B1G73BH0-Y(F8/H9/K0)(08/09) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M392B1G70BH0-Y(F8/H9/K0)(08/09) 4Gb (1024M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M392B2G70AM0-Y(F8/H9)(04/05) 4Gb DDP (2048M x4) * 18 Lead Free & Halogen Free 1066/1333 2 Now M392B2G70BM0-Y(F8/H9/K0)(08/09) 4Gb DDP (2048M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M392B2G70AM0-Y(F8/H9)(04/05) 4Gb DDP (1024M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now M392B2G70BM0-Y(F8/H9)(08/09) 4Gb DDP (1024M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now M392B5773CH0-Y(F8/H9/K0)(04/05) 2Gb (256M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now M392B5773DH0-Y(F8/H9/K0)(08/09) 2Gb (256M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now M392B5170FM0-Y(F8/H9/K0)(04/05) 1Gb DDP (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M392B5273CH0-Y(F8/H9/K0)(04/05) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M392B5273DH0-Y(F8/H9/K0)(08/09) 2Gb (256M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M392B5270CH0-Y(F8/H9/K0)(04/05) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M392B5270DH0-Y(F8/H9/K0)(08/09) 2Gb (512M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 1 Now M392B1K73CM0-Y(F8/H9/K0)(04/05) 2Gb DDP (512M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 4 Now M392B1K73DM0-Y(F8/H9)(08/09) 2Gb DDP (512M x8) * 18 Lead Free & Halogen Free 1066/1333 4 Now M392B1K70CM0-Y(F8/H9/K0)(04/05) 2Gb DDP (1024M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M392B1K70DM0-Y(F8/H9/K0)(08/09) 2Gb DDP (1024M x4) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) 04 = IDT B0 register 05 = Inphi C0 register 08 = IDT 09 = Inphi 1H 2011 DDR3 SDRAM 5 DRAM DDR3 SDRAM VLP REGISTERED MODULES DDR3 SDRAM UNBUFFERED MODULES Density Voltage 1GB 1.5V 2GB 1.5V 4GB 1.5V Organization 128Mx64 256Mx64 512Mx64 1024Mx64 8GB 1.5V 1024Mx64 Part Number Composition Compliance Speed (Mbps) Ranks Production M378B2873FH0-C(F8/H9/K0) 1Gb (128M x8) * 8 Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free 1066/1333/1600 1 Now 1066/1333/1600/1866 1 Now 1066/1333/1600 2 Now 1066/1333/1600/1866 2 Now 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600/1866 1 1 2 2 1 2 2 Now Now Now Now Now Now Now M378B2873GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 8 M378B5673FH0-C(F8/H9/K0) 1Gb (128M x8) * 16 M378B5673GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 16 M378B5773CH0-C(F8/H9/K0) M378B5773DH0-C(F8/H9/K0/MA) M378B5273CH0-C(F8/H9/K0) M378B5273DH0-C(F8/H9/K0/MA) M378B5173BH0-C(F8/H9/K0/MA) M378B1G73AH0-C(F8/H9/K0) M378B1G73BH0-C(F8/H9/K0/MA) 2Gb (256M x8) * 8 2Gb (256M x8) * 8 2Gb (256M x8) * 16 2Gb (256M x8) * 16 4Gb (512M x8) * 8 4Gb (512M x8) * 16 4Gb (512M x8) * 16 DDR3 SDRAM UNBUFFERED MODULES (ECC) Density 1GB Voltage 1.5V Organization 128Mx72 2GB 1.5V 256Mx72 4GB 1.5V 512Mx72 4GB 1.5V 1024Mx64 8GB 1.5V 1024Mx72 4GB 1.35V 1024Mx64 8GB 1.35V 1024Mx72 1GB 1.35V 128Mx72 2GB 1.35V 256Mx72 4GB 1.35V 512Mx72 Notes: F7 = DDR3-800 (6-6-6) Part Number Composition Compliance Speed (Mbps) Ranks Production M391B2873FH0-C(F8/H9/K0) 1Gb (128M x8) * 9 1066/1333/1600 1 Now 1066/1333/1600 1 Now 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 2 1 1 2 2 Now Now Now Now Now MA = DDR3-1866 (13-13-13) M391B2873GB0-Y(F8/H9/K0) 1Gb (128M x8) * 9 M391B5673FH0-Y(F8/H9/K0) M391B5773CH0-Y(F8/H9/K0) M391B5773DH0-Y(F8/H9/K0) M391B5273CH0-Y(F8/H9/K0) M391B5273DH0-Y(F8/H9/K0) 1Gb (128M x8) * 18 2Gb (256M x8) * 9 2Gb (256M x8) * 9 2Gb (256M x8) * 18 2Gb (256M x8) * 18 Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) M391B2873GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 9 M391B5673FH0-C(F8/H9/K0) M391B5773CH0-C(F8/H9/K0) M391B5773DH0-C(F8/H9/K0/MA) M391B5273CH0-C(F8/H9/K0) M391B5273DH0-C(F8/H9/K0/MA) M391B5173BH0-C(F8/H9/K0/MA) M391B1G73AH0-C(F8/H9/K0) M391B1G73BH0-C(F8/H9/K0/MA) M391B5173BH0-Y(F8/H9/K0) M391B1G73AH0-Y(F8/H9/K0) M391B1G73BH0-Y(F8/H9/K0) M391B2873FH0-Y(F8/H9/K0) 1Gb (128M x8) * 18 2Gb (256M x8) * 9 2Gb (256M x8) * 9 2Gb (256M x8) * 18 2Gb (256M x8) * 18 4Gb (512M x8) * 9 4Gb (512M x8) * 18 4Gb (512M x8) * 18 4Gb (512M x8) * 9 4Gb (512M x8) * 18 4Gb (512M x8) * 18 1Gb (128M x8) * 9 1066/1333/1600/1866 1 Now 1066/1333/1600 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 2 1 1 2 2 1 2 2 1 2 2 1 Now Now Now Now Now Now Now Now Now Now Now Now DDR3 SDRAM SODIMM MODULES Density 1GB Voltage 1.5V Organization 128Mx64 2GB 1.5V 256Mx64 4GB 1.5V 512Mx64 4GB 1.5V 1024Mx64 8GB 1.5V 1024Mx64 2GB 1.35V 256Mx64 4GB 1.35V 512Mx64 4GB 1.35V 1024Mx64 8GB 1.35V 1024Mx64 Notes: F7 = DDR3-800 (6-6-6) 6 DDR3 SDRAM Part Number Composition Compliance Speed (Mbps) Ranks Production M471B2873FHS-C(F8/H9/K0) 1Gb (128M x8) * 8 1066/1333/1600 1 Now M471B2873GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 8 1066/1333/1600/1866 1 Now M471B5673FH0-C(F8/H9/K0) 1Gb (128M x8) * 16 1066/1333/1600 2 Now M471B5673GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 16 1066/1333/1600/1866 2 Now M471B5773CHS-C(F8/H9/K0) M471B5773DH0-C(F8/H9/K0/MA) M471B5273CH0-C(F8/H9/K0) M471B5273DH0-C(F8/H9/K0/MA) M471B5173BH0-C(F8/H9/K0) M471B1G73AH0-C(F8/H9/K0) M471B1G73BH0-C(F8/H9/K0/MA) M471B5773CHS-Y(F8/H9) M471B5773DH0-Y(F8/H9/K0) M471B5273CH0-Y(F8/H9) M471B5273DH0-Y(F8/H9/K0) M471B5173BH0-Y(F8/H9/K0) M471B1G73AH0-Y(F8/H9/K0) M471B1G73BH0-Y(F8/H9/K0) 2Gb (256M x8) * 8 2Gb (256M x8) * 8 2Gb (256M x8) * 16 2Gb (256M x8) * 16 4Gb (512M x8) * 8 4Gb (512M x8) * 16 4Gb (512M x8) * 16 2Gb (256M x8) * 8 2Gb (256M x8) * 8 2Gb (256M x8) * 16 2Gb (256M x8) * 16 4Gb (512M x8) * 8 4Gb (512M x8) * 16 4Gb (512M x8) * 16 Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 1 1 2 2 1 2 2 1 1 2 2 1 2 2 Now Now Now Now Now Now Now Now Now Now Now Now Now Now F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) 1H 2011 MA = DDR3-1866 (13-13-13) samsung.com/semi/dram Density Voltage Organization 1Gb 1.5V 256M x4 1Gb 1.5V 128M x8 1Gb 1.5V 128M x16 2Gb 1.5V 512M x4 2Gb 1.5V 256M x8 2Gb 1.5V 128Mx16 4Gb 1.5V 1024M x4 4Gb 1.5V 512M x8 1Gb 1.35V 256M x4 1Gb 1.35V 128M x8 2Gb 1.35V 512M x4 2Gb 1.35V 256M x8 4Gb 1.35V 1024M x4 4Gb 1.35V 512M x8 Notes: F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) Part Number # Pins-Package Compliance Speed (Mbps) Dimensions Production K4B1G0446F-HC(F8/H9/K0) 78 Ball -FBGA 1066/1333/1600 7.5x11mm Now K4B1G0446G-BC(F8/H9/K0/MA) 78 Ball -FBGA 1066/1333/1600/1866 7.5x11mm Now K4B1G0846F-HC(F8/H9/K0) 78 Ball -FBGA 1066/1333/1600 7.5x11mm Now K4B1G0846G-BC(F8/H9/K0/MA) 78 Ball -FBGA 1066/1333/1600/1866 7.5x11mm Now K4B1G1646G-BC(F8/H9/K0/MA/NB) 96 Ball -FBGA K4B2G0446C-HC(F8/H9/K0) K4B2G0446D-HC(F8/H9/K0/MA) K4B2G0846C-HC(F8/H9/K0) K4B2G0846D-HC(F8/H9/K0/MA) K4B2G1646C-HC(F8/H9/K0/MA) K4B4G0446A-HC(F8/H9/K0) K4B4G0446B-HC(F8/H9/K0/MA) K4B4G0846A-HC(F8/H9/K0) K4B4G0846B-HC(F8/H9/K0/MA) K4B1G0446F-HY(F8/H9/K0) 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 96 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA K4B1G0446G-BY(F8/H9/K0) 78 Ball -FBGA K4B1G0846F-HY(F8/H9/K0) 78 Ball -FBGA K4B1G0846G-BY(F8/H9/K0) 78 Ball -FBGA K4B2G0446C-HY(F8/H9/K0) K4B2G0446D-HY(F8/H9/K0) K4B2G0846C-HY(F8/H9/K0) K4B2G0846D-HY(F8/H9/K0) K4B4G0446A-HY(F8/H9/K0) K4B4G0446B-HY(F8/H9/K0) K4B4G0846A-HY(F8/H9/K0) K4B4G0846B-HY(F8/H9/K0) 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) NB = DDR3-2133 (14-14-14) Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free 1066/1333/1600/1866/2133 7.5x13.3mm Now 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600 1066/1333/1600/1866 1066/1333/1600 7.5x11mm 7.5x11mm 7.5x11mm 7.5x11mm 7.5x13.3mm 7.5x11mm 7.5x11mm 7.5x11mm 7.5x11mm 7.5x11mm Now Now Now Now Now Now Now Now Now Now 1066/1333/1600 7.5x11mm Now 1066/1333 7.5x11mm Now 1066/1333/1600 7.5x11mm Now 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 1066/1333/1600 7.5x11mm 7.5x11mm 7.5x11mm 7.5x11mm 7.5x11mm 7.5x11mm 7.5x11mm 7.5x11mm Now Now Now Now Now Now Now Now * MA, and NB are available in ES only DDR2 SDRAM REGISTERED MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Register Rank Production 1GB 128Mx72 2GB 256Mx72 M393T2863FBA-C(E6/F7) M393T5660FBA-C(E6/F7) M393T5663FBA-C(E6/E7) M393T5160FBA-C(E6/F7) (128M x8)*9 (256M x4)*18 (128M x8)*18 (256M x4)*36 Lead free Lead free Lead free Lead free 667/800 667/800 667/800 667/800 Y Y Y Y 1 1 2 2 Now Now Now Now 4GB 512Mx72 Notes: E6 = PC2-5300 (DDR2-667 @ CL=5) F7 = PC2-6400 (DDR2-800 @ CL=6) E7 = PC2-6400 (DDR2-800 @ CL=5) Voltage = 1.8V DDR2 SDRAM VLP REGISTERED MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Register Rank Production 2GB 256Mx72 M392T5660FBA-CE6 (256M x4)*18 Lead free 667 Y 1 Now DDR2 SDRAM FULLY BUFFERED MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Voltage Rank Production 2GB 256Mx72 4GB 512Mx72 M395T5663FB4-CE68 M395T5160FB4-CE68 M395T5163FB4-CE68 (128M x8)*18 (256M x4)*36 (128M x8)*36 Lead free Lead free Lead free 667 667 667 1.8V 1.8V 1.8V 2 2 4 Now Now Now Notes: E6 = PC2-5300 (DDR2-667 @ CL=5) samsung.com/semi/dram Voltage = 1.8V (AMB Voltage = 1.5V) 1H 2011 AMB = IDT L4 DDR3 & DDR2 SDRAM 7 DRAM DDR3 SDRAM COMPONENTS DDR2 SDRAM UNBUFFERED MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production 1GB 2GB 128Mx64 256Mx64 M378T2863FBS-C(E6/F7/E7) M378T5663FB3-C(E6/F7/E7) (128M x8)*8 (128M x8)*16 Lead free Lead free 667/800 667/800 1 2 Now Now Notes: E6 = PC2-5300 (DDR2-667 @ CL=5) E7 = PC2-6400 (DDR2-800 @ CL=5) F7 = PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.8V DDR2 SDRAM UNBUFFERED MODULES (ECC) Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production 1GB 2GB 128Mx72 256Mx64 M391T2863FB3-C(E6/F7) M391T5663FB3-C(E6/F7) (128Mx8)*9 (128Mx8)*18 Lead free Lead free 667/800 667/800 1 2 Now Now Notes: E6 = PC2-5300 (DDR2-667 @ CL=5) E7 = PC2-6400 (DDR2-800 @ CL=5) F7 = PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.8V DDR2 SDRAM SODIMM MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production 1GB 2GB 128Mx64 256Mx64 M470T2863FB3-C(E6/F7/E7) M470T5663FB3-C(E6/F7/E7) (64Mx16)*8 (128M x8)*8 Lead free Lead free 667/800 667/800 2 2 Now Now Notes: E6 = PC2-5300 (DDR2-667 @ CL=5) E7 = PC2-6400 (DDR2-800 @ CL=5) F7 = PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.8V DDR2 SDRAM COMPONENTS Density Organization Part Number # Pins-Package Dimensions Package Speed (Mbps) Production 256Mb 16Mx16 128M x4 64M x8 32M x16 128M x4 64M x8 32M x16 256M x4 128M x8 64M x16 K4T56163QN-HC(E6/F7/E7/F8) K4T51043QI-HC(E6/F7/E7) K4T51083QI-HC(E6/F7/E7/F8) K4T51163QI-HC(E6/F7/E7/F8) K4T51043QJ-HC(E6/F7/E7) K4T51083QJ-HC(E6/F7/E7/F8) K4T51163QJ-HC(E6/F7/E7/F8) K4T1G044QF-BC(E6/F7/E7) K4T1G084QF-BC(E6/F7/E7/F8) K4T1G164QF-BC(E6/F7/E7/F8) 84-FBGA 60-FBGA 60-FBGA 84-FBGA 60-FBGA 60-FBGA 84-FBGA 60-FBGA 60-FBGA 84-FBGA 7.5x12.5mm 7.5x9.5mm 7.5x9.5mm 7.5x12.5mm 7.5x9.5mm 7.5x9.5mm 7.5x12.5mm 7.5x9.5mm 7.5x9.5mm 7.5x12.5mm Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free 667/800/1066 667/800 667/800/1066 667/800/1066 667/800 667/800/1066 667/800/1066 667/800 667/800/1066 667/800/1066 Now Now Now Now Q3 Q3 Q3 Now Now Now E6 = DDR2-667 (5-5-5) F7 = DDR2-800 (6-6-6) E7 = DDR2-800 (5-5-5) F8 = DDR2-1066 (7-7-7) Voltage = 1.8V Package Type H = FBGA (Lead-free & Halogen-free) B = FBGA (Lead-free & Halogen-free, Flip Chip) 512Mb 1Gb Notes: DDR SDRAM COMPONENTS Density Organization Part Number # Pins - Package Speed (Mbps) 128Mb 32Mx16 64Mx4 32Mx8 16Mx16 8Mx16 K4H510438J-LCB3/B0 K4H510438J-HCCC/B3 K4H510838J-LCCC/B3 K4H510838J-HCCC/B3 K4H511638J-LCCC/B3 K4H560438N-LCB3/B0 K4H560838N-LCCC/B3 K4H561638N-LCCC/B3 K4H281638O-LCCC 66-TSOP 60-FBGA 66-TSOP 60-FBGA 66-TSOP 66-TSOP 66-TSOP 66-TSOP 66-TSOP 266/333 333/400 333/400 333/400 333/400 266/333 333/400 333/400 400 Notes: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3) 128Mx4 512Mb 256Mb 64Mx8 SDRAM COMPONENTS Density 256Mb 128Mb Notes: 8 Organization Part Number # Pins - Package Speed (Mbps) Refresh 64Mx4 32Mx8 16Mx16 16Mx8 8Mx16 K4S560432N-LC(L)75000 K4S560832N-LC(L)75000 K4S561632N-LC(L)(75/60)000 K4S280832O-LC(L)75000 K4S281632O-LC(L)(75/60)000 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 133 133 133/166 133 133/166 8K 8K 8K 4K 4K Banks: 4 All products are Lead Free Voltage: 3.3V Speed: PC133 (133MHz CL=3/PC100 CL2) L = Commercial Temp., Low Power For Industrial Temperature, check with SSI Marketing DDR2, DDR & SDRAM Components 1H 2011 samsung.com/semi/dram Type MSDR Density Organization Part Number Package Power Production 16Gb 32Mx16 16Mx32 16Mx16 8Mx32 32Mx16 16Mx32 32Mx32 64Mx32 x32 (2CS, 2CKE) x32 (2CS, 2CKE) 1CH x32 1CH x32 2CH x32/ch 1CH x32 1CH x32 1CH x32 2CH x32/ch 2CH x32/ch 1CH x32 2CH x32/ch 2CH x32/ch 2CH x32/ch 2CH x32/ch K4M51163PI-BG(1) K4M51323PI-HG(1) K4X56163PN-FG(1) K4X56323PN-8G(1) K4X51163PI-FG(1) K4X51323PI-8G(1) K4X1G323PF-8G(1) K4X2G323PC-8G(1) K4X4G303PC-AG(1) K4X4G303PC-7G(1) K4P1G324EE-AG(1) K4P2G324EC-AG(1) K3PE3E300M-XG(1) K4P4G304EC-AG(1) K4P4G154EC-FG(1) K4P4G324EB-FG(1) K3PE4E400M-XG(1) K3PE4E400A-XG(1) K4P8G304EC-FC(1) K3PE8E800M-XG(1) K3PE7E700M-XG(1) K3PE7E700A-XG(1) K3PE0E00M-XG(1) 54-FBGA 90-FBGA 60-FBGA 90-FBGA 60-FBGA 90-FBGA 90-FBGA 90-FBGA 168-FBGA, 12x12 PoP, DDP 240-FBGA, 14x14 PoP, DDP 168-FBGA, 12x12 PoP 168-FBGA, 12x12 PoP 216-FBGA, 12x12 PoP 168-FBGA, 12x12 PoP, DDP, 64Mx32*2 134-FBGA, 11x11.5 PoP, DDP, 128x16*2 168-FBGA, 12x12 PoP, MONO, 128Mx32 216-FBGA, 12x12 PoP, QDP, 64Mx32*2 240-FBGA, 14x14 PoP, QDP, 64Mx32*2 134-FBGA, 11x11.5 PoP, QDP, 128x16*4 216-FBGA, 12x12 PoP, QDP, 64Mx32*4 216-FBGA, 12x12 PoP, DDP, 128Mx32*2 240-FBGA, 14x14 PoP, DDP, 128Mx32*2 216-FBGA, 12x12 PoP, QDP, 128Mx32*4 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.2V 1.2V 1.2V 1.2V 1.2V 1.2V 1.2V 1.2V 1.2V 1.2V 1.2V 1.2V 1.2V Now Now Now Now Now Now Now Now Now Now Now Now Now Now Now Now Now Now Now Now Now Now Now (1) Speed: Mobile-SDR 60: 166MHz, CL3 75: 133MHz, CL3 Mobile-DDR D8: 200MHz, CL3 C6: 166MHz, CL3 LPDDR2 C1: 800Mbps 512Mb 256Mb 512Mb MDDR 1Gb 2Gb 4Gb 1Gb 2Gb 4Gb LPDDR2 8Gb Notes: DRAM Mobile DRAM Components All products offered at Extended, Low, i-TCSR & PASR & DS (Temp, Power) GRAPHICS DRAM COMPONENTS Type Density Organization 2Gb 64Mx32 1Gb 32Mx32 1Gb 512Mb 2Gb 1Gb 1Gb 32Mx32 16Mx32 128Mx16 64Mx16 64Mx16 GDDR5 GDDR3 gDDR3 gDDR2 Notes: Part Number Package VDD/VDDQ Speed Bin (MHz) K4G20325FC-HC(1) K4G20325FC-HC04 K4G20325FC-HC03 K4G10325FE-HC(1) K4G10325FE-HC04 K4J10324KE-HC(1) K4J52324KI-HC(1) K4W2G1646C-HC(1) K4W1G1646G-BC(1) K4N1G164QE-HC(1) 170-FBGA 170-FBGA 170-FBGA 170-FBGA 170-FBGA 136-FBGA 136-FBGA 96 FBGA 96 FBGA 84-FBGA 1.5/1.5V 1.35V/1.35V 1.35V/1.35V 1.5/1.5V 1.35V/1.35V 1.8V/1.8V 1.8/1.8V 1.5V/1.5V 1.5V/1.5V 1.8/1.8V 2000/2500/3000 1800 2000 2000/2500 1800 700/800/1000/1200 700/800/1000 800/933/1066 800/933/1066 400/500 Package H: FBGA (Halogen Free & Lead Free) B: FBGA (Halogen Free & Lead Free) samsung.com/semi/dram (1) Speeds (clock cycle - speed bin) 03: 0.3ns (3000MHz) 5C: 0.555 (1800MHz) 04: 0.4ns (2500MHz) 08: 0.83ns (1200MHz) 05: 0.5ns (2000MHz) 1A: 1ns (1000MHz GDDR3) 1H 2011 1A: 1ns (1066MHz gDDR3) 14: 1.429ns (700MHz) 11: 1.1ns (933MHz) 20: 2.0ns (500MHz) 12: 1.25ns (800MHz) 25: 2.5ns (400MHz) Mobile & Graphics DRAM Components 9 COMPONENT DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (VDD, VDDQ) Number of Internal Banks SAMSUNG Memory DRAM DRAM Type Density Bit Organization 1. Memory (K) 2. DRAM: 4 3. DRAM Type B: DDR3 SDRAM D: GDDR SDRAM G: GDDR5 SDRAM H: DDR SDRAM J: GDDR3 SDRAM M: Mobile SDRAM N: SDDR2 SDRAM S: SDRAM T: DDR SDRAM U: GDDR4 SDRAM V: Mobile DDR SDRAM Power Efficient Address W: SDDR3 SDRAM X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM 4. Density 10: 1G, 8K/32ms 16: 16M, 4K/64ms 26: 128M, 4K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms 68: 768M, 8K/64ms 1G: 1G, 8K/64ms 2G: 2G, 8K/64ms 4G: 4G, 8K/64ms 5. Bit Organization 02: x2 04: x4 06: x4 Stack (Flexframe) 07: x8 Stack (Flexframe) 10 DRAM Ordering Information 08: x8 15: x16 (2CS) 16: x16 26: x4 Stack (JEDEC Standard) 27: x8 Stack (JEDEC Standard) 30: x32 (2CS, 2CKE) 31: x32 (2CS) 32: x32 6. # of Internal Banks 2: 2 Banks 3: 4 Banks 4: 8 Banks 5: 16 Banks 7. Interface ( VDD, VDDQ) 2: LVTTL, 3.3V, 3.3V 4: LVTTL, 2.5V, 2.5V 5: SSTL-2 1.8V, 1.8V 6: SSTL-15 1.5V, 1.5V 8: SSTL-2, 2.5V, 2.5V A: SSTL, 2.5V, 1.8V F: POD-15 (1.5V,1.5V) H: SSTL_2 DLL, 3.3V, 2.5V M: LVTTL, 1.8V, 1.5V N: LVTTL, 1.5V, 1.5V P: LVTTL, 1.8V, 1.8V Q: SSTL-2 1.8V, 1.8V R: SSTL-2, 2.8V, 2.8V U: DRSL, 1.8V, 1.2V 8. Revision A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation E: 6th Generation F: 7th Generation G: 8th Generation H: 9th Generation I: 10th Generation J: 11th Generation K: 12th Generation M: 1st Generation N: 14th Generation Q: 17th Generation 1H 2011 9. Package Type DDR SDRAM L: TSOP II (Lead-free & Halogen-free) H: FBGA (Lead-free & Halogen-free) F: FBGA for 64Mb DDR (Lead-free & Halogen-free) 6: sTSOP II (Lead-free & Halogen-free) T: TSOP II N: sTSOP II G: FBGA U: TSOP II (Lead-free) V: sTSOP II (Lead-free) Z: FBGA (Lead-free) DDR2 SDRAM Z: FBGA (Lead-free) J: FBGA DDP (Lead-free) Q: FBGA QDP (Lead-free) H: FBGA (Lead-free & Halogen-free) M: FBGA DDP (Lead-free & Halogen-free) E: FBGA QDP (Lead-free & Halogen-free) T: FBGA DSP (Lead-free & Halogen-free, Thin) DDR3 SDRAM Z: FBGA (Lead-free) H: FBGA (Halogen-free & Lead-free) Graphics Memory Q: TQFP U: TQFP (Lead Free) G: 84/144 FBGA V: 144 FBGA (Lead Free) Z: 84 FBGA(Lead Free) T: TSOP L: TSOP (Lead Free) A: 136 FBGA B: 136 FBGA(Lead Free) H: FBGA(Hologen Free & Lead Free) E: 100 FBGA(Hologen Free & Lead Free) SDRAM L TSOP II (Lead-free & Halogen-free) N: STSOP II T: TSOP II U: TSOP II (Lead-free) V: sTSOP II (Lead-free) samsung.com/semi/dram 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (VDD, VDDQ) Number of Internal Banks SAMSUNG Memory DRAM DRAM Type Density Bit Organization XDR DRAM J: BOC(LF) P: BOC Mobile DRAM Leaded / Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X /Z: 54balls BOC Mono J /V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.8pitch S/D: 90balls FBGA Monolithic (11mm x 13mm) F/H: Smaller 90balls FBGA Mono Y/P: 54balls CSP DDP M/E: 90balls FBGA DDP 10. Temp & Power - COMMON (Temp, Power) C: Commercial, Normal (0'C - 95'C) & Normal Power C: (Mobile Only) Commercial (-25 ~ 70'C), Normal Power J: Commercial, Medium L: Commercial, Low (0'C - 95'C) & Low Power L: (Mobile Only) Commercial, Low, i-TCSR F: Commercial, Low, i-TCSR & PASR & DS E: Extended (-25~85'C), Normal N: Extended, Low, i-TCSR G: Extended, Low, i-TCSR & PASR & DS I: Industrial, Normal (-40'C - 85'C) & Normal Power P: Industrial, Low (-40'C - 85'C) & Low Power H: Industrial, Low, i-TCSR & PASR & DS 11. Speed (Wafer/Chip Biz/BGD: 00) DDR SDRAM CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) B3: DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3) *1 A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3) B0: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3) Note 1: "B3" has compatibility with "A2" and "B0" samsung.com/semi/dram DRAM COMPONENT DRAM ORDERING INFORMATION DDR2 SDRAM CC: DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3) D5: DDR2-533 (266MHz @ CL=4, tRCD=4, tRP=4) E6: DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5) F7: DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6) E7: DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5) 1 : 1.1ns (900MHz) 55: 5.5ns (183MHz) 12: 1.25ns (800MHz) 60: 6.0ns (166MHz) 14: 1.4ns (700MHz) 16: 1.6ns (600MHz) DDR3 SDRAM F7: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6) F8: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7) G8: DDR3-1066 (533MHz @ CL=8, tRCD=8, tRP=8) H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11) XDR DRAM A2: 2.4Gbps, 36ns, 16Cycles B3: 3.2Gbps, 35ns, 20Cycles C3: 3.2Gbps, 35ns, 24Cycles C4: 4.0Gbps, 28ns, 24Cycles DS: Daisychain Sample Graphics Memory 18: 1.8ns (550MHz) 04: 0.4ns (2500MHz) 20: 2.0ns (500MHz) 05: 0.5ns (2000MHz) 22: 2.2ns (450MHz) 5C: 0.56ns (1800MHz) 25: 2.5ns (400MHz) 06: 0.62ns (1600MHz) 2C: 2.66ns (375MHz) 6A: 0.66ns (1500MHz) 2A: 2.86ns (350MHz) 07: 0.71ns (1400MHz) 33: 3.3ns (300MHz) 7A: 0.77ns (1300MHz) 36: 3.6ns (275MHz) 08: 0.8ns (1200MHz) 40: 4.0ns (250MHz) 09: 0.9ns (1100MHz) 45: 4.5ns (222MHz) 1 : 1.0ns (1000MHz) 50/5A: 5.0ns (200MHz) 1H 2011 SDRAM (Default CL=3) 50: 5.0ns (200MHz CL=3) 60: 6.0ns (166MHz CL=3) 67: 6.7ns 75: 7.5ns PC133 (133MHz CL=3) Mobile-SDRAM 60: 166MHz, CL 3 75: 133MHz, CL 3 80: 125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3 15: 66MHz, CL 2 & 3 Mobile-DDR C3: 133MHz, CL 3 C2: 100MHz, CL 3 C0: 66MHz, CL 3 Note: All of Lead-free or Halogen-free product are in compliance with RoHS DRAM Ordering Information 11 Module DRAM Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 M X XX T XX X X X X X X XX X AMB Vendor Speed Temp & Power PCB Revision Package Component Revision SAMSUNG Memory DIMM Data bits DRAM Component Type Depth Number of Banks Bit Organization 1. Memory Module: M 2. DIMM Type 3: DIMM 4: SODIMM 3. Data bits 12: x72 184pin Low Profile Registered DIMM 63: x63 PC100 / PC133 SODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin/168pin (Intel/JEDEC) 68: x64 184pin Unbuffered DIMM 70: x64 200pin Unbuffered SODIMM 71: x64 204pin Unbuffered SODIMM 74: x72 /ECC Unbuffered DIMM with SPD for 168pin (Intel/JEDEC) 77: x72 /ECC PLL + Register DIMM with SPD for 168pin (Intel PC100) 78: x64 240pin Unbuffered DIMM 81: x72 184pin ECC unbuffered DIMM 83: x72 184pin Registered DIMM 90: x72 /ECC PLL + Register DIMM 91: x72 240pin ECC unbuffered DIMM 92: x72 240pin VLP Registered DIMM 93: x72 240pin Registered DIMM 95: x72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133) 4. DRAM Component Type B: DDR3 SDRAM (1.5V VDD) L: DDR SDRAM (2.5V VDD) S: SDRAM T: DDR2 SDRAM (1.8V VDD) 5. Depth 9. Package 09: 8M (for 128Mb/512Mb) 17: 16M (for 128Mb/512Mb) 16: 16M 28: 128M 29: 128M (for 128Mb/512Mb) 32: 32M 33: 32M (for 128Mb/512Mb) 51: 512M 52: 512M (for 512Mb/2Gb) 56: 256M 57: 256M (for 512Mb/2Gb) 59: 256M (for 128Mb/512Mb) 64: 64M 65: 64M (for 128Mb/512Mb) 1G: 1G 1K: 1G (for 2Gb) 6. # of Banks in Comp. & Interface 1: 4K/64mxRef., 4Banks & SSTL-2 2 : 8K/ 64ms Ref., 4Banks & SSTL-2 2: 4K/ 64ms Ref., 4Banks & LVTTL (SDR Only) 5: 8K/ 64ms Ref., 4Banks & LVTTL (SDR Only) 5: 4Banks & SSTL-1.8V 6: 8Banks & SSTL-1.8V 7. Bit Organization 0: x 4 3: x 8 4: x16 6: x 4 Stack (JEDEC Standard) 7: x 8 Stack (JEDEC Standard) 8: x 4 Stack 9: x 8 Stack 8. Component Revision A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. M: 1st Gen. Q: 17th Gen. 12 DRAM Ordering Information E: FBGA QDP (Lead-free & Halogen-free) G: FBGA H: FBGA (Lead-free & Halogen-free) J: FBGA DDP (Lead-free) M: FBGA DDP (Lead-free & Halogen-free) N: sTSOP Q: FBGA QDP (Lead-free) T: TSOP II (400mil) U: TSOP II (Lead-Free) V: sTSOP II (Lead-Free) Z: FBGA(Lead-free) 10. PCB Revision 0: Mother PCB 1: 1st Rev 2: 2nd Rev. 3: 3rd Rev. 4: 4th Rev. A: Parity DIMM S: Reduced PCB U: Low Profile DIMM 11. Temp & Power C: Commercial Temp. (0C ~ 95C) & Normal Power L: Commercial Temp. (0C ~ 95C) & Low Power 12. Speed CC: (200MHz @ CL=3, tRCD=3, tRP=3) D5: (266MHz @ CL=4, tRCD=4, tRP=4) E6: (333MHz @ CL=5, tRCD=5, tRP=5) F7: (400MHz @ CL=6, tRCD=6, tRP=6) E7: (400MHz @ CL=5, tRCD=5, tRP=5) F8: (533MHz @ CL=7, tRCD=7, tRP=7) G8: (533MHz @ CL=8, tRCD=8, tRP=8) H9: (667MHz @ CL=9, tRCD=9, tRP=9) K0: (800MHz @ CL=10, tRCD=10, tRP=10) 7A: (133MHz CL=3/PC100 CL2) 13. AMB Vendor for FBDIMM 0, 5: Intel 1, 6, 8: IDT 9: Montage Note: All of Lead-free or Halogen-free product are in compliance with RoHS 1H 2011 samsung.com/semi/dram SLC Flash MOQ Density 128Gb ODP 64Gb QDP 16Gb Based 32Gb DDP 16Gb Mono 16Gb QDP 4Gb Based 8Gb DDP 4Gb Mono 2Gb Based 1Gb Based 2Gb Mono 1Gb Mono Part Number Package Type Org. Vol(V) Tray T/R -xxxx0xx -xxx0Txx Status K9QDGD8S5M-HCB* BGA x8 1.8 960 1000 C/S K9QDGD8U5M-HCB* BGA x8 3.3 960 1000 C/S K9QDG08U5M-HCB* BGA x8 3.3 960 1000 C/S K9WCGD8S5M-HCB* BGA x8 1.8 960 1000 C/S K9WCGD8U5M-HCB* BGA x8 3.3 960 1000 C/S K9WCG08U5M-HCB* BGA x8 3.3 960 1000 C/S FLASH Family K9WCG08U5M-HIB* BGA x8 3.3 960 1000 C/S K9KBGD8S1M-HCB* BGA x8 1.8 960 1000 C/S K9KBGD8U1M-HCB* BGA x8 3.3 960 1000 C/S K9KBGD8U1M-HIB* BGA x8 3.3 960 1000 C/S K9KBG08U1M-HCB* BGA x8 3.3 960 1000 C/S K9KBG08U1M-HIB* BGA x8 3.3 960 1000 C/S K9FAG08U0M-HCB* BGA x8 3.3 960 1000 C/S K9FAG08U0M-HIB* BGA x8 3.3 960 1000 C/S K9WAG08U1D-SCB0 TSOP1 HF&LF x8 3.3 960 1000 C/S K9WAG08U1D-SIB0 TSOP1 HF&LF x8 3.3 960 1000 C/S K9WAG08U1B-PCB0 TSOP1 x8 3.3 960 1000 EOL Scheduled K9WAG08U1B-PIB0 TSOP1 x8 3.3 960 1000 EOL Scheduled K9WAG08U1B-KIB0 ULGA HF & LF x8 3.3 960 2000 EOL Scheduled K9K8G08U0D-SCB0 TSOP1 HF&LF X8 3.3 960 1000 C/S K9K8G08U0D-SIB0 TSOP1 HF&LF x8 3.3 960 1000 C/S K9K8G08U0B-PCB0 TSOP1 x8 3.3 960 1000 EOL Scheduled K9K8G08U0B-PIB0 TSOP1 x8 3.3 960 1000 EOL Scheduled K9K8G08U1B-KIB0 ULGA HF & LF x8 3.3 960 2000 EOL Scheduled K9F4G08U0D-SCB0 TSOP1 HF & LF x8 3.3 960 1000 C/S K9F4G08U0D-SIB0 TSOP1 HF& LF X8 3.3 960 1000 C/S K9F4G08U0B-PCB0 TSOP1 x8 3.3 960 1000 EOL Scheduled K9F4G08U0B-PIB0 TSOP1 x8 3.3 960 1000 EOL Scheduled K9F4G08U0B-KIB0 ULGA HF & LF x8 3.3 960 2000 EOL Scheduled K9F2G08U0C-SCB0 TSOP-LF/HF x8 3.3 960 1000 C/S K9F2G08U0C-SIB0 TSOP-LF/HF x8 3.3 960 1000 C/S K9F2G08U0B-PCB0 TSOP1 x8 3.3 960 1000 EOL Scheduled K9F2G08U0B-PIB0 TSOP1 x8 3.3 960 1000 EOL Scheduled K9F1G08U0D-SCB0 TSOP-LF/HF x8 3.3 960 1000 C/S K9F1G08U0D-SIB0 TSOP-LF/HF x8 3.3 960 1000 C/S K9F1G08U0C-PCB0 TSOP1 x8 3.3 960 1000 EOL Scheduled K9F1G08U0C-PIB0 TSOP1 x8 3.3 960 1000 EOL Scheduled *D=DDR and 0=SDR Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free samsung.com/semi/flash 1H 2011 SLC Flash 13 MLC Flash Type 2bit 3bit Family Density Technology Part Number MOQ Package Type Org. Vol(V) Tray T/R -xxxx0xx -xxx0Txx Status 256Gb ODP 32nm Ep-MLC K9PFGD8U5M-HCE* BGA x8 3.3 720 - C/S Now 32Gb Based 128Gb QDP 32nm Ep-MLC K9HDGD8U5M-HCE* BGA x8 3.3 720 - C/S Now 64Gb DDP 32nm Ep-MLC K9LCGD8U1M-HCE* BGA x8 3.3 720 - C/S Now 64Gb Based 256Gb ODP 35nm K9ACGD8U0M-SCB* 52LGA x8 3.3 720 2000 MP 128Gb QDP 27nm K9HDG08U1A-SCB* 48TSOP x8 3.3 960 1000 MP 64Gb DDP 27nm K9LCG08U0A-SCB* 48TSOP x8 3.3 960 1000 MP 32Gb mono 27nm K9GBG08U0A-SCB* 48TSOP x8 3.3 960 1000 MP 32Gb Based 64Gb QDP 32nm K9HCG08U1E-SCB* 48TSOP x8 3.3 960 1000 MP 16GB Based 32Gb DDP 32nm K9LBG08U0E-SCB* 48TSOP x8 3.3 960 1000 MP 16Gb mono 32nm K9GAG08U0E-SCB* 48TSOP x8 3.3 960 1000 MP 8Gb Based 8Gb 32nm K9G8G08U0C-SCB* 48TSOP x8 3.3 960 1000 MP 256Gb QDP 3bit_27nm DDR K9CFGD8U1M-SCB* TSOP x8 3.3 960 - C/S Now 128Gb DDP 3bit_27nm DDR K9BDGD8U0M-SCB* TSOP x8 3.3 960 - C/S Now 64Gb mono 3bit_27nm DDR K9ACGD8U0M-SCB* TSOP x8 3.3 960 - C/S Now 64Gb Based *D=DDR and 0=SDR Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free SD and MicroSD FLASH CARDS Application Density 2GB 4GB 8GB SD Cards 16GB 32GB 2GB 4GB uSD Cards 8GB 16GB 32GB Please contact your local Samsung sales representative for part numbers and latest product offerings. moviNANDTM (eMMC) Density Part Number Package Type Org. Vol (V) Status 2GB KLM2G1DEHE-B101xxx 11.5x13 x8 1.8/3.3 C/S MP 4GB KLM4G1FEQA-A001xxx 12x16 x8 1.8/3.3 CS-April 8GB KLMCGAFEJA-B001xxx 12x16 x8 1.8/3.3 C/S MP 16GB KLMBG8FEJA-A001xxx 12x16 x8 1.8/3.3 C/S MP 32GB 64GB KLMAG4FEJA-A001xxx KLM8G2FEJA-A001xxx 12x16 14x18 x8 x8 1.8/3.3 1.8/3.3 C/S MP C/S MP Solid State Drives (SSD) Interface Size 2.5" 7mmT SATA II - MLC 2.5" 9.5mmT mSATA Connector Thin SATA Thin SATA PCle Controller PM810 PM810 PM810 Component 16Gb 16Gb 16Gb Density Part Number 64GB MZ7PA064HMCD-01000 128GB MZ7PA128HMCD-01000 256GB MZ7PA256HMDR-01000 64GB MZ5PA064HMCD-01000 128GB MZ5PA128HMCD-01000 256GB MZ5PA256HMDR-01000 32GB MZMPA032HMCD-00000 64GB MZMPA064HMDR-00000 MZMPA128HMFU-00000 128GB Please contact your local Samsung sales representative for latest product offerings 14 MLC Flash, SD/MicroSD Flash, moviNAND & SSD Note: All parts are lead free 1H 2011 samsung.com/semi/flash FLASH Product Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 K 9 X X X X X X X X - X X X X 1. Memory (K) 2. NAND Flash : 9 3. Small Classification (SLC : Single Level Cell, MLC : Multi Level Cell) 7 : SLC moviNAND 8 : MLC moviNAND F : SLC Normal G : MLC Normal H : MLC QDP K : SLC DDP L : MLC DDP M : MLC DSP N : SLC DSP P : MLC 8 Die Stack Q : SLC 8 Die Stack S : SLC Single SM T : SLC SINGLE (S/B) U : 2 Stack MSP W : SLC 4 Die Stack 4~5. Density 12 : 512M 56 : 256M 1G : 1G 2G : 2G 4G : 4G 8G : 8G AG : 16G BG : 32G CG : 64G DG : 128G EG : 256G LG : 24G NG : 96G ZG : 48G 00 : NONE 6~7. Organization 00 : NONE 08 : x8 16 : x16 samsung.com/semi/flash 8. Vcc A : 1.65V~3.6V B : 2.7V (2.5V~2.9V) C : 5.0V (4.5V~5.5V) D : 2.65V (2.4V~2.9V) E : 2.3V~3.6V R : 1.8V (1.65V~1.95V) Q : 1.8V (1.7V~1.95V) T : 2.4V~3.0V U : 2.7V~3.6V V : 3.3V (3.0V~3.6V) W : 2.7V~5.5V, 3.0V~5.5V 0 : NONE 9. Mode 0 : Normal 1 : Dual nCE & Dual R/nB 3 : Tri /CE & Tri R/B 4 : Quad nCE & Single R/nB 5 : Quad nCE & Quad R/nB 9 : 1st block OTP A : Mask Option 1 L : Low grade FLASH Pre-Program Version Customer Bad Block Temp Package --Generation Mode SAMSUNG Memory NAND Flash Small Classification Density Density Organization Organization Vcc 13. Temp C : Commercial I : Industrial 0 : NONE (Containing Wafer, CHIP, BIZ, Exception handling code) 14. Customer Bad Block B : Include Bad Block D : Daisychain Sample L : 1~5 Bad Block N : ini. 0 blk, add. 10 blk S : All Good Block 0 : NONE (Containing Wafer, CHIP, BIZ, Exception handling code) 15. Pre-Program Version 0 : None Serial (1~9, A~Z) 10. Generation M : 1st Generation A : 2nd Generation B : 3rd Generation C : 4th Generation D : 5th Generation 11. " ----" 12. Package A : COB B : FBGA (Halogen-Free, Lead-Free) C : CHIP BIZ D : 63-TBGA F : WSOP (Lead-Free) G : FBGA H : TBGA (Lead-Free) I : ULGA (Lead-Free) (12*17) J : FBGA (Lead-Free) L : ULGA (Lead-Free) (14*18) M : TLGA N : TLGA2 P : TSOP1 (Lead-Free) Q : TSOP2 (Lead-Free) S : TSOP1 (Halogen-Free, Lead-Free) T : TSOP2 U : COB (MMC) V : WSOP W : Wafer Y : TSOP1 Z : WELP (Lead-Free) 1H 2011 Flash Ordering Information 15 High-Speed Asynchronous SRAM Density Organization 256Kx16 4Mb 512Kx8 Part Number Package Vcc (V) Speed (ns) Operating Temp. Operating Current (mA) Standby Current (uA) Production Status K6R4016C1D 44-SOJ, 44-TSOP2 5 10 I 65, 55 20, 5 Mass Production K6R4016V1D 44-SOJ, 44-TSOP2 3.3 10 I 80, 65 20, 5 (1.2) Mass Production K6R4008C1D 36-SOJ, 44-TSOP2 5 10 I 65, 55 20, 5 Mass Production K6R4008V1D 36-SOJ, 44-TSOP2 3.3 10 I 80, 65 20, 5 Mass Production Synchronous SRAM SPB & SB Density Organization 2Mx18 36Mb 1Mx36 1Mx36 18Mb 1Mx18 256Kx36 8Mb 512Kx18 128Kx36 4Mb 256Kx18 NOTES: 16 Part Number Package Operating Mode Vdd (V) Access Time tCD (ns) Cycle Time (MHz) I/O Voltage (V) Production Status Comments K7A321830C 100-TQFP SPB 3.3, 2.5 3.1 200 3.3, 2.5 Mass Production 2E1D K7B321835C 100-TQFP SB 3.3, 2.5 7.5 118 3.3, 2.5 Mass Production K7A323630C 100-TQFP SPB 3.3, 2.5 3.1 200 3.3, 2.5 Mass Production K7B323635C 100-TQFP SB 3.3, 2.5 7.5 118 3.3, 2.5 Mass Production K7A163630B 100-TQFP SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 2E1D K7A163631B 100-TQFP SPB 3.3, 2.5 3.1 200 3.3, 2.5 Mass Production 2E2D K7B163635B 100-TQFP SB 3.3, 2.5 7.5 117 3.3, 2.5 Mass Production K7A161830B 100-TQFP SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 2E1D K7A161831B 100-TQFP SPB 3.3, 2.5 3.1 200 3.3, 2.5 Mass Production 2E2D K7B161835B 100-TQFP SB 3.3, 2.5 7.5 117 3.3, 2.5 Mass Production K7A803609B 100-TQFP SPB 3.3 2.6 250 3.3,2.5 Not for new designs 2E1D K7A803600B 100-TQFP SPB 3.3 3.5 167 3.3,2.5 Not for new designs 2E1D K7B803625B 100-TQFP SB 3.3 6.5 133 3.3,2.5 Not for new designs K7A801809B 100-TQFP SPB 3.3 2.6 250 3.3,2.5 Not for new designs 2E1D K7A801800B 100-TQFP SPB 3.3 3.5 167 3.3,2.5 Not for new designs 2E1D K7B801825B 100-TQFP SB 3.3 6.5 133 3.3,2.5 Not for new designs K7A403609B 100-TQFP SPB 3.3 2.4 250 3.3, 2.5 Not for new designs 2E1D K7A403600B 100-TQFP SPB 3.3 3.5 167 3.3, 2.5 Not for new designs 2E1D K7B403625B 100-TQFP SB 3.3 6.5 133 3.3, 2.5 Not for new designs K7A403200B 100-TQFP SPB 3.3 3.5 167 3.3, 2.5 Not for new designs 2E1D K7A401809B 100-TQFP SPB 3.3 2.4 250 3.3, 2.5 Not for new designs 2E1D K7A401800B 100-TQFP SPB 3.3 3.5 167 3.3, 2.5 Not for new designs 2E1D K7B401825B 100-TQFP SB 3.3 6.5 133 3.3, 2.5 Not for new designs All TQFP products are Lead Free 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable Asynchronous & Synchronous SDRAM 2E1D SPB speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz SB speed recommendation: Use 7.5ns Access Time; Use 6.5ns Access Time 1H 2011 samsung.com/semi/sram Type Density 72Mb 36Mb 18Mb NtRAM 8Mb 4Mb Organization Part Number Package Operating Mode Vdd (V) Access Time tCD (ns) Speed tCYC (MHz) I/O Voltage (V) Production Status 2Mx36 K7N643645M 100-TQFP SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 4Mx18 K7N641845M 100-TQFP SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 1Mx36 K7N323631C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 2Mx18 K7N321831C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 1Mx36 K7M323635C 100-TQFP FT 3.3, 2.5 7.5 118 3.3, 2.5 Mass Production 2Mx18 K7M321835C 100-TQFP FT 3.3, 2.5 7.5 118 3.3, 2.5 Mass Production 1Mx18 K7N161831B 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 512Kx36 K7N163631B 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 1Mx18 K7M161835B 100-TQFP FT (SB) 3.3 6.5 133 3.3, 2.5 Mass Production 512Kx36 K7M163635B 100-TQFP FT (SB) 3.3 6.5 133 3.3, 2.5 Mass Production 256Kx36 K7N803601B 100-TQFP SPB 3.3 3.5 167 3.3,2.5 Not for new designs 512Kx18 K7N801801B 100-TQFP SPB 3.3 3.5 167 3.3,2.5 Not for new designs 256Kx36 K7N803609B 100-TQFP SPB 3.3 2.6 250 3.3,2.5 Not for new designs 512Kx18 K7N801809B 100-TQFP SPB 3.3 2.6 250 3.3,2.5 Not for new designs 256Kx36 K7N803645B 100-TQFP SPB 2.5 3.5 167 2.5 Not for new designs 512Kx18 K7N801845B 100-TQFP SPB 2.5 3.5 167 2.5 Not for new designs 256Kx36 K7N803649B 100-TQFP SPB 2.5 2.6 250 2.5 Not for new designs 512Kx18 K7N801849B 100-TQFP SPB 2.5 2.6 250 2.5 Not for new designs 512Kx18 K7M801825B 100-TQFP FT 3.3 6.5 133 3.3, 2.5 Not for new designs 256Kx36 K7M803625B 100-TQFP FT 3.3 6.5 133 3.3, 2.5 Not for new designs 128Kx36 K7N403609B 100-TQFP SPB 3.3 3 200 3.3,2.5 Not for new designs 256Kx18 K7N401809B 100-TQFP SPB 3.3 3 200 3.3,2.5 Not for new designs 256Kx18 K7B401825B 100-TQFP SB 3.3 6.5 133 3.3, 2.5 Not for new designs SPB and FT 4Mb NOTES: All TQFP products are lead free NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7.5ns Late-Write RR SRAM Density 32Mb 8Mb Organization Part Number Package Operating Mode Vdd (V) Access Time tCD (ns) Speed tCYC (MHz) I/O Voltage (V) Production Status 1Mx36 K7P323674C 119-BGA SP 1.8 / 2.5V 1.6, 2.0 300,250 1.5 (Max 1.8) Mass Production 2Mx18 K7P321874C 119-BGA SP 1.8 / 2.5V 1.6, 2.0 300,250 1.5 (Max 1.8) Mass Production 256Kx36 K7P803611B 119-BGA SP 3.3 1.6 300 1.5 (Max.2.0) Mass Production 512Kx18 K7P801811B 119-BGA SP 3.3 1.6 300 1.5 (Max.2.0) Mass Production 256Kx36 K7P803666B 119-BGA SP 2.5 2 250 1.5 (Max.2.0) Mass Production 512Kx18 K7P801866B 119-BGA SP 2.5 2 250 1.5 (Max.2.0) Mass Production samsung.com/semi/sram 1H 2011 NtRAM & Late Write RR SRAM 17 SR AM NtRAM DDR Synchronous SRAM Type Density 16Mb DDR 8Mb Organization Part Number Package Vdd (V) Access Time tCD (ns) Cycle Time I/O Voltage (V) Production Status 512Kx36 K7D163674B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production 1Mx18 K7D161874B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production 256Kx36 K7D803671B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs 512Kx18 K7D801871B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs K7I641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B 4Mx18 K7I641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B 72Mb 2Mx36 2Mx18 DDR II CIO/SIO 36Mb 1Mx36 1Mx18 18Mb 512Kx36 K7J641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B K7I643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B K7I643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B K7J643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B K7I321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-2B K7I321884C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-4B K7J321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production SIO-2B K7I323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-2B K7I323684C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-4B K7J323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production SIO-2B K7I161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B K7I161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production CIO-4B K7J161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B K7J163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B K7I163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B K7I163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production CIO-4B K7K3218T2C 165-FBGA 1.8 0.45 400 1.5 Mass Production DDRII + CIO-2B, 2 clocks latancy K7K3218U2C 165-FBGA 1.8 0.45 400 2.5 Mass Production DDRII + CIO-2B, 2.5 clocks latancy K7K3236T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B, 2 clocks latancy K7K3236U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B, 2.5clocks latancy K7K1618T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B, 2 clocks latancy K7K1618U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production DDRII + CIO-2B, 2.5clocks latancy K7K1636T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production DDRII + CIO-2B, 2 clocks latancy 2Mx18 36Mb 1Mx36 DDR II+ CIO 1Mx18 18Mb 512Kx36 NOTES: 18 Comments 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O DDR I / II / II+ For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz 1H 2011 samsung.com/semi/sram QDR SYNCHRONOUS SRAM Density Organization 1Mx18 QDR I 18Mb 512Kx36 8Mx9 72Mb 4Mx18 2Mx36 4Mx9 QDR II 36Mb 2Mx18 1Mx36 2Mx9 18Mb 1Mx18 Part Number Package Vdd (V) Access Time tCD (ns) Cycle Time I/O Voltage (V) Production Status Comments K7Q161862B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B K7Q161864B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B K7Q163662B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B K7Q163664B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B K7R640982M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B K7R641882M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B K7R641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B K7R643682M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B K7R643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B K7R320982C 165-FBGA 1.8 0.45 167, 250, 200 1.5,1.8 Mass Production QDR II-2B K7R321882C 165-FBGA 1.8 0.45 167, 250, 200 1.5,1.8 Mass Production QDR II-2B K7R321884C 165-FBGA 1.8 0.45 200, 300, 250 1.5,1.8 Mass Production QDR II-4B K7R323682C 165-FBGA 1.8 0.45 300, 250, 200 1.5,1.8 Mass Production QDR II-2B K7R323684C 165-FBGA 1.8 0.45 200, 300, 250 1.5,1.8 Mass Production QDR II-4B K7R160982B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B K7R161882B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B K7R161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B K7R163682B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B K7R163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B K7S3236T4C 165-FBGA 1.8 0.45 400 1.5 Mass Production QDR II + 4B, 2 clocks latancy K7S3236U4C 165-FBGA 1.8 0.45 400 2.5 Mass Production QDR II + 4B, 2.5 clocks latancy K7S3218T4C 165-FBGA 1.8 0.45 400 1.5 Mass Production QDR II + 4B, 2 clocks latancy K7S3218U4C 165-FBGA 1.8 0.45 400 1.5 Mass Production QDR II + 4B, 2.5 clocks latancy 1Mx18 K7S1618T4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production QDR II + 4B, 2 clocks latancy 512Kx36 K7S1636U4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production QDR II + 4B, 2.5 clocks latancy 512Kx36 1Mx36 36Mb QDR II+ 2Mx18 18Mb NOTES: SR AM Type For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4 For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed samsung.com/semi/sram 1H 2011 QDR I / II / II+ 19 Synchronous SRAM Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 K 7 X X X X X X X X - X X X X X Packaging Type Speed Speed Temp, Power Package --Generation Vcc, Interface, Mode SAMSUNG Memory Sync SRAM Small Classification Density Density Organization Organization Vcc, Interface, Mode 1. Memory (K) 2. Sync SRAM: 7 3. Small Classification A: Sync Pipelined Burst B: Sync Burst D: Double Data Rate I: Double Data Rate II, Common I/O J: Double Data Rate, Separate I/O K: Double Data II+, Common I/O M: Sync Burst + NtRAM N: Sync Pipelined Burst + NtRAM P: Sync Pipe Q: Quad Data Rate I R: Quad Data Rate II S: Quad Data Rate II+ 4~5. Density 80: 8M 40: 4M 64: 72M 16: 18M 32: 36M 09: x9 32: x32 8~9. Vcc, Interface, Mode 00: 3.3V,LVTTL,2E1D WIDE 01: 3.3V,LVTTL,2E2D WIDE 08: 3.3V,LVTTL,2E2D Hi SPEED 09: 3.3V,LVTTL,Hi SPEED 11: 3.3V,HSTL,R-R 12: 3.3V,HSTL,R-L 14: 3.3V,HSTL,R-R Fixed ZQ 22: 3.3V,LVTTL,R-R 23: 3.3V,LVTTL,R-L 25: 3.3V,LVTTL,SB-FT WIDE 30: 1.8/2.5/3.3V,LVTTL,2E1D 31: 1.8/2.5/3.3V,LVTTL,2E2D 35: 1.8/2.5/3.3V,LVTTL,SB-FT 44: 2.5V,LVTTL,2E1D 45: 2.5V,LVTTL,2E2D 20 10. Generation M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation 11. "--" 6~7. Organization 08: x8 18: x18 36: x36 49: 2.5V,LVTTL,Hi SPEED 52: 2.5V,1.5/1.8V,HSTL,Burst2 54: 2.5V,1.5/1.8V,HSTL,Burst4 62: 2.5V/1.8V,HSTL,Burst2 64: 2.5V/1.8V,HSTL,Burst4 66: 2.5V,HSTL,R-R 74: 1.8V,2.5V,HSTL,All 82: 1.8V,HSTL,Burst2 84: 1.8V,HSTL,Burst4 88: 1.8V,HSTL,R-R T2: 1.8V,2Clock Latency,Burst2 T4: 1.8V,2Clock Latency,Burst4 U2: 1.8V,2.5Clock Latency,Burst2 U4: 1.8V,2.5Clock Latency,Burst4 SRAM Ordering Information WAFER, CHIP BIZ Level Division 0: NONE,NONE 1: Hot DC sort 2: Hot DC, selected AC sort 14~15. Speed Sync Burst,Sync Burst + NtRAM < Mode is R-L > (Clock Accesss Time) 65: 6.5ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns Other Small Classification (Clock Cycle Time) 10: 100MHz 11: 117MHz 13: 133MHz 14: 138MHz 16: 166MHz 20: 200MHz 25: 250MHz 26: 250MHz(1.75ns) 27: 275MHz 30: 300MHz 33: 333MHz 35: 350MHz 37: 375MHz 40: 400MHz(t-CYCLE) 42: 425MHz 45: 450MHz 50: 500MHz (except Sync Pipe) 16. Packing Type (16 digit) 12. Package H: BGA,FCBGA,PBGA G: BGA, FCBGA, FBGA (LF) F: FBGA E: FBGA (LF) Q: (L)QPF P: (L)QFP(LF) C: CHIP BIZ W: WAFER 13. Temp, Power COMMON (Temp,Power) 0: NONE,NONE (Containing of error handling code) C: Commercial,Normal E: Extended,Normal I: Industrial,Normal 1H 2011 - Common to all products, except of Mask ROM - Divided into TAPE & REEL (In Mask ROM, divided into TRAY, AMMO packing separately) Type Packing Type New Marking ComponentTAPE & REEL T Other (Tray, Tube, Jar) 0 (Number) Stack S ComponentTRAY Y (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M samsung.com/semi/sram MCP: NAND + MDDR Memory NAND Density 1Gb (x16) 2Gb (x16) NAND & MDRAM 4Gb (x16) DRAM Density/Organization Voltage (NAND-DRAM) Package 256/512Mb (x16) 1.8V - 1.8V 130/137FBGA 512Mb (x32) 1.8V - 1.8V 137FBGA 1Gb (x16,x32) 1.8V - 1.8V 130/137FBGA 2Gb (x32) 1.8V - 1.8V 137FBGA 2Gb*2 (x32, 2CS/2CKE) 1.8V - 1.8V 137FBGA 2Gb*2 (x32) 1.8V - 1.8V 240FBGA POP 4Gb*2 (x16) 2Gb*2 (x32, 2CS/2CKE) 1.8V - 1.8V 137FBGA 8Gb (x16) 2Gb*2 (x32) 1.8V - 1.8V 240FGBA POP DRAM Density/Organization Voltage Package 2Gb*2 (x32, 1ch, 2CS) 1.8V - 1.8V 186FBGA/162FBGA MCP: moviNAND + LPDDR2 Memory moviNAND Density 4GB moviNAND & MDRAM 4Gb*2 (x32, 1ch, 2CS) 1.8V - 1.8V 186FBGA/162FBGA 2Gb*2 (x32, 1ch, 2CS) 1.8V - 1.8V 186FBGA 2Gb*2 (x32, 1ch, 2CS) 1.8V - 1.8V 186FBGA 4Gb*2 (x32, 1ch, 2CS) 1.8V - 1.8V 186FBGA NOR Density UtRAM Density/Organization Voltage MCP Package 512Mb (Mux) 256Mb 1.8V - 1.8V 56FBGA 512Mb (Demux) 128Mb 1.8V - 1.8V 84FBGA 256Mb (Mux) 128Mb 1.8V - 1.8V 56FBGA 8GB 16GB Memory NOR & UtRAM 256Mb (Mux) 64Mb 1.8V - 1.8V 56FBGA 256Mb (Demux) 64Mb 1.8V - 1.8V 56FBGA 128Mb (Mux) 64Mb 1.8V - 1.8V 52FBGA 128Mb (Demux) 64Mb 1.8V - 1.8V 84FBGA samsung.com/semi/mcp 1H 2011 MCP MCP: NOR + UtRAM Multi-Chip Packages 21 3.5" Hard Disk Drives Family F4 F4EG-3 F3 EcoGreen F3 EcoGreen F2 (F2EG) F1DT F3EG 22 Capacity (GB) RPM Interface Buffer Sector Model 160 7200 SATA 3.0 Gbps 8 512 HD165GJ 160 7200 SATA 3.1 Gbps 16 512 HD166GJ 250 7200 SATA 3.2 Gbps 8 512 HD255GJ 250 7200 SATA 3.3 Gbps 16 512 HD256GJ 320 7200 SATA 3.4 Gbps 16 512 HD322GJ 1500 5400 SATA 3.5 Gbps 32 4K HD155UI 2000 5400 SATA 3.6 Gbps 32 4K HD204UI 160 7200 SATA 3.0 Gbps 8 512 HD164GJ 250 7200 SATA 3.0 Gbps 8 512 HD254GJ 320 7200 SATA 3.0 Gbps 8 512 HD324HJ 160 7200 SATA 3.0 Gbps 16 512 HD163GJ 250 7200 SATA 3.0 Gbps 16 512 HD253GJ 320 7200 SATA 3.0 Gbps 16 512 HD323HJ 500 7200 SATA 3.0 Gbps 16 512 HD502HJ 1TB 7200 SATA 3.0 Gbps 32 512 HD103SJ 250 5400 SATA 3.0 Gbps 16 512 HD253GI 500 5400 SATA 3.0 Gbps 16 512 HD503HI 1 TB 5400 SATA 3.0 Gbps 32 512 HD105SI 500 5400 SATA 3.0 Gbps 16 512 HD502HI 1 TB 5400 SATA 3.0 Gbps 32 512 HD103SI 1.5 TB 5400 SATA 3.0 Gbps 32 512 HD154UI 160 7200 SATA 3.0 Gbps 8 512 HD161GJ 250 7200 SATA 3.0 Gbps 8 512 HD251HJ 320 7200 SATA 3.0 Gbps 8 512 HD321HJ 320 7200 SATA 3.0 Gbps 16 512 HD322HJ 1 TB 7200 SATA 3.0 Gbps 32 512 HD103UJ 750 - SATA 3.0 Gbps 32 512 HD754JI 1TB - SATA 3.0 Gbps 32 512 HD105SI 1.5 TB - SATA 3.0 Gbps 32 512 HD153WI 2 TB - SATA 3.0 Gbps 32 512 HD203WI Hard Disk Drives 1H 2011 samsung.com/hdd 2.5" Hard Disk Drives Family Capacity (GB) RPM Interface Buffer Sector Model 160 5400 USB 2.0 8 512 HM162HX 250 5400 USB 2.0 8 512 HM252HX 320 5400 USB 2.0 8 512 HM322IX 500 5400 USB 2.0 8 512 HM502JX 160 5400 SATA 3.0 Gbps 8 512 HM161GI 250 5400 SATA 3.0 Gbps 8 512 HM251HI 320 5400 SATA 3.0 Gbps 8 512 HM321HI 500 5400 SATA 3.0 Gbps 8 512 HM501II 640 5400 SATA 3.0 Gbps 8 512 HM641JI 160 5400 SATA 3.0 Gbps 8 512 HM161HI 250 5400 SATA 3.0 Gbps 8 512 HM250HI 320 5400 SATA 3.0 Gbps 8 512 HM320II 400 5400 SATA 3.0 Gbps 8 512 HM400JI 500 5400 SATA 3.0 Gbps 8 512 HM500JI 750 5400 8 HM750LI 1000 5400 8 HM100UI 250 7200 16 HM250HJ 320 7200 16 HM320HJ 500 7200 16 HM500JJ 640 7200 16 HM640JJ M5P 160 5400 PATA 8 512 HM160HC M5S 160 5400 SATA 1.5 Gbps 8 512 HM160HI MC30 30 5400 PATA 8 512 HM031HC M7U M7E M7 MT2 MP4 Interface Size 2.5" 7mmT SATA II - MLC 2.5" 9.5mmT mSATA Connector Thin SATA Thin SATA PCle Controller PM810 PM810 PM810 Component 16Gb 16Gb 16Gb Density Part Number 64GB MZ7PA064HMCD-01000 128GB MZ7PA128HMCD-01000 256GB MZ7PA256HMDR-01000 64GB MZ5PA064HMCD-01000 128GB MZ5PA128HMCD-01000 256GB MZ5PA256HMDR-01000 32GB MZMPA032HMCD-00000 64GB MZMPA064HMDR-00000 MZMPA128HMFU-00000 128GB Please contact your local Samsung sales representative for latest product offerings samsung.com/hdd | samsung.com/greenmemory 1H 2011 STO R AG E Solid State Drives (SSD) Note: All parts are lead free Hard Disk Drives & Solid State Drives 23 Blu-ray H/H Interface Speed SATA BD Combo 12X Type Loading H/H Tray Type Loading Lightscribe Model X TS-HB43A / SH-B123A TS-HB43L / SH-B123L O Blu-ray Slim Interface Speed SATA BD Combo 4X Slim Tray Lightscribe Model X SN-B043D SN-B043P O Blu-ray Combo Slim External Interface Speed Type Loading Lightscribe Model USB 2.0 BD Combo 6X Slim Tray X SE-406AB Speed Type Loading Lightscribe Model DVD-W H/H Interface PATA DVD Write 22X H/H Tray X TS-H662A / SH-S222A SATA DVD Write 22X H/H Tray X TS-H663C / SH-S223C PATA DVD Write 22X H/H Tray O TS-H662L / SH-S222L SATA DVD Write 22X H/H Tray O SATA DVD Write 22X H/H Tray X TS-H663L / SH-S223L SH-222AB Speed Type Loading Lightscribe DVD-W Slim Interface SATA DVD Write 8X Slim Tray X O Model TS-L633F / SN-S083F TS-L633J Slot O TS-L633R / SN-S083R TS-T633P Loading Lightscribe Model SE-S084D SE-S084F DVD-W Slim External Interface Speed USB 2.0 DVD Write 8X Type Ultra Slim Tray X Slim Tray X DVD-ROM Interface SATA Speed Type Loading Lightscribe Model DVD 16X H/H Tray X DVD 8X Slim SH-D163C TS-L333H DVD-W Loader Interface Speed Type Loading Lightscribe Model PATA DVD 8X H/H Tray X TS-P632F 24 Optical Disk Drives 1H 2011 samsungodd.com DID Product Classification E-DID: Exclusive DID Super Narrow Panoramic display Wall-mounted Narrow P-DID: Performance DID B-DID: Basic DID Large Format Display Thin/Light (Edge LED) Narrow Black Bezel Outdoor: High Luminance 1500 - 2000nit 70" / 82" Landscape / Portrait convertible Why DID Instead of TV? Commercial (DID) Consumer (TV) Warranty 18 months to 2 years 90 days to 1 year Reliability Designed for continuous use in different environments Turned on for 20 hours + Variety of temperatures & location Designed for in-home use in controlled environment Turned on for 6-8 hours In-home living room Picture Quality Designed for PC signals LCD backlight covers a wider color spectrum necessary for PC source integration giving better picture quality Designed for vable TV signals Have cooler color temperature settings producing blue/white image displaying less color accuracy Location Can be oriented in either portrait or landscape mode Can only be oriented in portrait mode Product Segmentation HEAVY USE E-DID: Exclusive All Features of P-DID Specialty: SNB, Panoramic, High Brightness Robust Design Professional Outdoor Events Billboard * Control Room * Simulation * Scoreboard * Sports * Billboard Broadcasting P-DID: Performance All Features of B-DID Narrow & Black Bezel Typ. Brightness: 700 (cd/m2) B-DID: Basic Landscape/Portrait High reliability Pol. (Haze 44%) Long Lifetime: More Than 2 Years Entertainment Transportation Communication Rental * Casino * Theatre * Poster * Menu * Airport * Train/Bus Station * Conference Room * Rental * Staging Commercial Education * Kiosk * Mart Board * E-Board LIGHT USE Product Segmentation Abbr Warranty Bezel Suggested Run Time Brightness Usage Applications Pricing E-DID Exclusive 2 years Narrow and Super Narrow 20 hours + 450 to 2000 nits Heavy Outdoor, Video Walls, Panormaic High-price Range P-DID Performance 2 years Narrow 20 hours + 600/700 nits Medium Semi-Outdoor Mid-price Range B-DID Basic 18 months Normal 14-16 hours 450 nits Light Indoor, e-Board Low-price Range; Comperable to Consumer Panels LCD Type tftlcd.com 1H 2011 LCD 25 Samsung Digital Information Display (DID) Panel Lineup Type Current Model New Model LTI430LA01-0 - E-DID P-DID Bezel Backlight Brightness (typical) Contrast Ratio Response Time Frequency MP* Comment 43" 1920X480 Narrow CCFL 700 nits 3,000:1 8ms 60Hz Now Panoramic 43" 1920X480 Narrow E-LED 450 nits 3,000:1 6ms 60Hz 2011. Q2 Panoramic LTI460AA03 - 46" HD Narrow + Black CCFL 1500 nits 3,000:1 8ms 60Hz Now High bright LTI460AA04 - 46" HD Super narrow CCFL 700 nits 3,000:1 8ms 60Hz Now 7.3mm Active to Active LTI460AA05 - 46" HD Super narrow CCFL 450 nits 4,000:1 8ms 60Hz Now 7.3mm Active to Active LTI550HN01 55" FHD Super narrow D-LED 700 nits 3,000:1 TBD 60Hz 2011. Q2 5.7mm Active to Active LTI700HD02 70" FHD Normal D-LED 2000 nits 2,500:1 8ms 60Hz Now High Bright LTI400HA02 40" FHD Narrow CCFL 700 nits 3,000:1 8ms 60Hz Now LTI400HA03 40" FHD Narrow + Black CCFL 700 nits 3,000:1 8ms 60Hz Now LTI460HA02 46" FHD Narrow CCFL 700 nits 3,500:1 8ms 60Hz Now LTI460HA03 46" FHD Narrow + Black CCFL 700 nits 3,500:1 8ms 60Hz Now LTI460HJ01 46" FHD Narrow E-LED 600 nits 3,000:1 10ms 120Hz 2011. Q2 - 55" FHD Narrow CCFL 700 nits 4,000:1 8ms 60Hz Now LTI550HJ02 55" FHD Narrow E-LED 600 nits 4,000:1 10ms 120Hz 2011. Q2 - 70" FHD Normal CCFL 600 nits 2,000:1 8ms 60Hz Now LTI700HD01 LTI820HT-L01 - 82" FHD Normal CCFL 600 nits 2,000:1 8ms 60Hz Now LTI260AP01 26" HD Normal CCFL 450 nits 4,000:1 8ms 60Hz Now 32" HD Normal CCFL 450 nits 3,500:1 8ms 60Hz 2011. Q2 LTI400HA01 40" FHD Normal CCFL 450 nits 4,000:1 8ms 60Hz Now LTI460HM01 46" FHD Normal CCFL 450 nits 3,000:1 8ms 60Hz Now LTI700HD03 70" FHD Normal CCFL 450 nits 2,000:1 8ms 60Hz Now E-Board; Landscape mode only LTI820HD03 82" FHD Normal CCFL 450 nits 2,000:1 8ms 60Hz Now E-Board; Landscape mode only LTI320AA02 NOTES: Model resolution LTI430LA02 LTI550HF02 B-DID Size LTI320AP02 HD = 1366 x 768 FHD = 1920 x 1080 *MP Date subject to change Please contact your local Samsung Rep for more information. 26 LCD 1H 2011 tftlcd.com Tablets Size 7 9.7 10.1 PN Mode Resolution H(RGB) V Aspect Ratio PPI Brightness (nits) MP LTN070NL01 PLS WSVGA 1024 600 17:10 170 400 Now PLS WXGA 1280 800 16:10 216 400 June, 2011 LTN097LX01-H01 PLS XGA 1024 768 4:3 132 300 April, 2011 LTN101AL02-P01 PLS WXGA 1280 800 16:10 149 400 April, 2011 PLS WXGA 1280 800 16:10 149 400 June, 2011 H(RGB) V Aspect Ratio PPI Brightness (nits) MP Notebooks / Personal Computers Size PN Mode Resolution LTN101NT06 TN WSVGA 1024 600 17:10 118 200 Now LTN101AT03 TN HD 1366 768 16:9 155 200 TBD 11.6 LTN116AT TN HD 1366 768 16:9 135 200 TBD 12.5 LTN125AT TN HD 1366 768 16:9 125 200 TBD 10.1 13.3 14 15.6 17.3 LTN133AT TN HD 1366 768 16:9 118 200 TBD LTN140AT TN HD 1366 768 16:9 112 200 Now LTN140KT TN HD+ 1600 900 16:9 131 250 TBD LTN156AT TN HD 1366 768 16:9 100 200 Now LTN156KT TN HD+ 1600 900 16:9 118 250 TBD LTN156HT TN FHD 1920 1080 16:9 141 300 TBD LTN173KT01 TN HD+ 1600 900 16:9 106 200 Now Mode Resolution H(RGB) V Aspect Ratio PPI Brightness (nits) MP MONITORs Size 17 20 22 23 24 27 LTM170ET01 TN SXGA 1280 1024 5:4 96 250 Now LTM185AT01 TN HD 1366 768 16:9 85 250 Now LTM185AT04 TN HD 1366 768 16:9 85 250 Now LTM200KT03 TN HD+ 1600 900 16:9 92 250 Now LTM200KT07 TN HD+ 1600 900 16:9 92 250 Now LTM220MT05 TN WSXGA+ 1680 1050 16:10 90 250 Now LTM230HP01 PVA FHD 1920 1080 16:9 96 300 Now LTM230HT01 TN FHD 1920 1080 16:9 96 300 Now LTM230HT05 TN FHD 1920 1080 16:9 96 300 Now LTM240CT04 TN WUXGA 1920 1200 16:10 94 300 Now LTM240CL01 PLS WUXGA 1920 1200 16:9 94 300 May, 2011 LTM270HT03 TN FHD 1920 1080 16:9 82 300 Now LTM270DL02 PLS QHD 2560 1440 16:9 109 300 May, 2011 LCD 18.5 PN tftlcd.com 1H 2011 Tablets / Notebooks / Personal Computers / Monitors 27 Memory DRAM Flash SRAM MCP System LSI ASICs APs Display Drivers Imaging ICs Foundry Storage Solid State Drives Hard Drives Optical Disc Drives LCD Panels Displays Monitors Smartphones Tablets TVs samsung.com/us/business/oem-solutions Samsung Semiconductor, Inc. 3655 North First Street San Jose, CA 95134-1713 Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specifications with the intent to improve function or design at any time and without notice and is not required to update this documentation to reflect such changes. This publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation any consequential or incidental damages. Copyright 2011. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. All other names and brands may be claimed as the property of others. The appearance of all products, dates, figures, diagrams and tables are subject to change at any time, without notice. BR-11-ALL-001 Printed 03/11