© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 0 1Publication Order Number:
MAC3030−8/D
MAC3030−8
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full−wave silicon gate controlled solid−state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
Features
•Blocking Voltage to 250 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•Gate Triggering Guaranteed in Four Modes (Quadrants)
•Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to +1 25°C, Sine Wave 50 to
60 Hz, Gate Open)
VDRM,
VRRM 250 V
On−State RMS Current (TC = +70°C)
Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 8.0 A
Peak Non−Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = +25°C)
Preceded and followed by rated current
ITSM 80 A
Circuit Fusing Considerations, (t = 8.3 ms) I2t 26 A2s
Peak Gate Power
(TC = +70°C, Pulse Width = 10 ms) PGM 20 W
Average Gate Power
(TC = +70°C, t = 8.3 ms) PG(AV) 0.35 W
Peak Gate Current
(TC = +70°C, Pulse Width = 10 ms) IGM 2.0 A
Operating Junction Temperature Range TJ−40 to +125 °C
Storage Temperature Range Tstg −40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
8.0 AMPERES RMS
250 VOLTS
TO−220AB
CASE 221A−07
STYLE 4
1
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
MT1
G
MT2
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MAC30308G
AYWW
MARKING
DIAGRAM
MAC3030−8 = Standard Device Code
MAC30308G = Pb−Free Device Code
A = Assembly Location
Y = Year
WW = Work Week
23
Device Package Shipping
ORDERING INFORMATION
MAC3030−8 TO−220AB 500 Units/Box
MAC3030−8G TO−220AB
(Pb−Free) 500 Units/Box
MAC3030−8
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient RqJC
RqJA 2.0
62.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = +125°C
IDRM,
IRRM −
−−
−10
2.0 mA
mA
ON CHARACTERISTICS
Peak On-State Voltage
(ITM = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) VTM − 1.2 1.65 V
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
IGT
−
−
−
−
12
12
20
35
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VGT
−
−
−
−
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
V
Gate Non−Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125°C) All Four Quadrants VGD 0.2 − − V
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = "200 mA, TC = +25°C)
IH− 6.0 50 mA
Turn-On Time
(Rated VDRM, ITM = 11 A)
(IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)
tgt − 1.5 − ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = 70°C)
dv/dt(c) − 5.0 − V/ms
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = +70°C)
dv/dt − 100 − V/ms
MAC3030−8
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3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 − VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(−) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(−) MT2
REF
MT1
(−) IGT
GATE
(−) MT2
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT −+ IGT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
MAC3030−8
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4
90
Surge is preceded and followed by rated current
4.00.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
1.0
4.43.6
0.1
0.2
50
TJ = 25°C
0.5
2.0
5.0
10
20
100
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
80
0
20
40
5.0
60
1.0 2.0 3.0 7.0
100
TC = 70°C
f = 60 Hz
CYCLE
10
60 80
2.0
IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)
0
0
4.0
2.0
−40
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
040
CONDUCTION ANGLE = 360°
60
130
120
110
TC, CASE TEMPERATURE (°C)
−60 −20
70
20
80
0
0.4
0.8
1.2
1.6
100
1.0 10.0 8.07.05.0 6.04.0 9.0
10.0
12.0
14.0
8.0
6.0
10.03.02.01.0
0
NUMBER OF CYCLES
3.02.0 4.0 6.05.0 7.0 8.0 9.0
CONDUCTION ANGLE = 360°
T , MAXIMUM ALLOWABLE CASE
CTEMPERATURE ( C)°
P , AVERAGE POWER DISSIPATION
(AV)
I , INSTANTANEOUS ON-STATE CURRENT (AMPS)
T
I , PEAK SURGE CURRENT (AMP)
TSM
V , GATE TRIGGER VOLTAGE (NORMALIZED)
GT
TJ = 125°C
Figure 1. Current Derating Figure 2. Power Dissipation
Figure 3. Maximum On−State Characteristics
Figure 4. Maximum Non−Repetitive Surge Curren
t
Figure 5. Typical Gate Trigger Voltage
MAC3030−8
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5
806040200−20−40−60
0.4
0
0.8
1.2
1.6
2.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
TC, CASE TEMPERATURE (°C)
2.4
0
0.4
0.8
1.2
1.6
2.0
2.8
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
80
TC, CASE TEMPERATURE (°C)
−60 −20 0−40 20 40 60
I , HOLDING CURRENT (NORMALIZED)
H
I , GATE TRIGGER CURRENT (NORMALIZED)
GT
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
10 k200 5.0 k2.0 k1.0 k5000.1
t, TIME (ms)
10050205.02.01.0
0.02
0.5
1.0
0.5
0.2
0.1
0.05
0.2
0.01
ZqJC(t) = r(t) • RqJC
Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current
Figure 8. Thermal Response
MAC3030−8
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 −−− 1.15 −−−
Z−−− 0.080 −−− 2.04
A
K
L
V
GD
N
Z
H
Q
FB
123
4
−T− SEATING
PLANE
S
R
J
U
TC
TO−220AB
CASE 221A−07
ISSUE AA
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MAC3030−8/D
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