ROHM CO LTD - 4OE D MM 7424999 0005620 9 EMRHNM K7YvYA4S/tTransistors 2SB1309 7-33-17 DSB] BOO Testy PU TUF PNP YI hI IRS 1 Aik 78 te A /Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor @RE @ S472 +54 Dimensions (Unit : mm) 1) RSE ECH DONS, EB PRECHSo pe was | 2) 80VO HEED & 3. I Late 3) 2SD1200 I FY CHS, ait ceils, = ri ares, OTT. @ Features qt | 1) The rear surface of this device is | also molded, eliminating the need , Ser fos orzo [ue-0s for insulation. asc teas (1) Emitter 2) High breakdown voltage: ~80V (aaa) (2) Collector 3) Complementary pair with 25D1200. TO-126F (3) Base @ xR ATH Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit AVIS+-N-ARBE Veso ~80 Vv AV7S4:+Tiyvehse VcEO 80 Vv Eiya+N-A2RSE VeBo 5 v AL 2B Io 700 mA IL Sia Po 5 W (Tc=28) HaRRE Tj 150 Cc Rae iA Tstg 5~150 c SAH Nt Electrical Characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions AVIS + TS y SAREE BVceo | 80 _ = Vv I =2mA IVI2+N-AMRKSE BVcso | 80 - _ Vv tc =50 HA Ti ys+N- ARR BVepo | 5 - = V le =5OuA ALIS Leman ico _ - 0.5 | HA Vos =50V Di yRLemBR lEBO - - 05 ; HA Ves =4V AVISZ- Ti y sass Vce(sat)} 0.2 | 04] V 1 /lg=500mA/50mA Bae nig es Nre 82 _ 390 - Vce /Ic=3V/100mA ee VER) fr - 100 - MHz Vce =10V, le=50mA HABE Cob - 14 20 | pF Vp =10V, le=0, f=1MHz hreOiBlc k ) FRO A FIC MALET. @ Ea: REE R ( RRO sR) Item P Q R ay INLD hre 82~180 120~270 180~390 aes Type hee | Base Mfr ( (fa) 1000 2$B1309 |PaR 322 RehmROHM CO LTD - WOE D BM 7428999 0005621 O BERHM K7YYA4/Transistors - * 28B1309 @ Baht Hs Electrical Characteristic Curves , T-33-1 7 3}2.8W E 7 % v A a POWER DISSIPATION: Pe (W} COLLECTOR CURRENT: lc(mA) . s 2 0 25 50 5 oO 15 1s0 0 0.2 0.4 -0.6 0.8 1.0 1.2 1.4 1.6 AMBIENT TEMPERATURE. Ta (C) BASE TO EMITTER VOLTAGE: Vaetv) B CASE TEMPERATURE Te (C) z i . = : t Fig.1 MHRA Fig.2 Diy Siete Zz COLLECTOR CURRENT: Ic (A) DC CURRENT GAIN hee =1 "2 3 - = 0 -1_ +2 -5 -10 -29 60 -100 200 800 COLLECTOR TO EMITTER VOLTAGE Vce {Vj COLLECTOR CURRENT Ic (mA) Fig.3 LS -y SHEMHI ASIST Fig4 ARERR -AL OSS te/te=20/1 icfle =10/1 SATURATION VOLTAGE, Vce (sat) {V) COLLECTOR TRANSITION FREQUENCY tr (MHz) = - 2 5 10 20 50 COLLECTOR CURRENT Ic {mA} EMITTER CURRENT Ie (ma) FigS AV7- LS y SRAMNBE-IL7 SARE Fig.6 FiSSiiLS yo Bitte Row 323ROHM CO LTD - KF7YYAR/Transistors WOE D Mm 7828999 O005be2 2 MBRHM 2SB1309 COLLECTOR OUTPUT CAPACITANCE: Cob (pF) -0.5 -1 -2 5 10 -20 COLLECTOR TO BASE VOLTAGE Ves {V} Fig.7 AL72HNRE-ILI3-N-2REBE 7-33-17 EMITTER INPUT CAPACITANCE Cib [pF) -05 a -2 5 -10 -20 EMITTER TO BASE VOLTAGE Vea {VI Fig8 Li v2ANBSTi vy 2A-ARE 324 ROM