V
RRM
= 700 V - 1000 V
I
F
= 35 A
Features
• High Surge Capability DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol 1N3765 (R) 1N3766 (R) Unit
Re
etitive
eak reverse volta
eV
RRM
700 800 V
• Types from 700 V to 1000 V V
RRM
Silicon Standard
Recover
Diode
Conditions
1000
1N3765 thru 1N3768R
1N3768 (R)
900
1N3767 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
2. Reverse polarity (R): Stud is anode.
RMS reverse voltage V
RMS
490 560 V
DC blocking voltage V
DC
700 800 V
Continuous forward current I
F
35 35 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol 1N3765 (R) 1N3766 (R) Unit
Diode forward voltage 1.2 1.2
10 10 μA
10 10 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.25 0.25 °C/W
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
700
1000900
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-55 to 150
1N3768 (R)
10 10
1N3767 (R)
0.25
V
R
= 50 V, T
j
= 140 °C
0.25
1.2 1.2
10
V
R
= 50 V, T
j
= 25 °C
I
F
= 35 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
630
475 475
-55 to 150
35 35
10
A475
Reverse current I
R
V
F
475
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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