HLMP-ED80-K0T00 - Agilent / Hewlett-Packard

SunPower Series

Precision Optical Performance

HLMP-ED80-xxxxx

Radiometrically Tested AlInGaP II

LED Lamps for Sensor-Based

Applications

Technical Data

Features

• Characterized by

Radiometric Intensity

• High Optical Power Output

• Extremely Long Useful Life

• Low Power Consumption

• Well Defined Spatial

Radiation Patterns

• 639 nmPEAK Red Color

• 30° Viewing Angle

• High Operating

Temperature:

TjLED = +130°C

• Superior Resistance to

Moisture

• Suitable for Outdoor Use

Benefits

• Radiometric LED

Characterization Decreases

System Variability

• Improved System Reliability

• Visual Styling

• Visible Color for Improved

Application Safety

• On / Off Indication

• Suitable for a Variety of

Sensor-Based Applications

Applications

• Photo Sensor Stimulus

• Infrared Emitter

Replacement

• Solid State Optical Mouse

Sensors

• Surface Imaging Sensors

• Optical Position and Motion

Sensors

• Human Interface Devices

• Computer Printer Dot

Quality Control

• Battery Powered Systems

Description

Radiometrically Tested Precision

Optical Performance AlInGaP II

(aluminum indium gallium

phosphide) LEDs offer increased

sensor-based application design

flexibility. High-resolution

radiometric intensity bins (mW/sr)

enable customers to precisely

match LED lamp performance

with sensor functionality.

Visible LEDs offer new styling

alternatives — light can be

leveraged to develop more

attractive products. In comparison

to invisible infrared sources,

safety concerns are significantly

improved by the human

autonomic pupil response and

reflexive movement away from

bright light. Visible LEDs further

indidcate system on / off status.

The AlInGaP II technology

provides extremely stable light

output over very long periods of

time, with low power consumption.

These lamps are made with an

advanced optical grade epoxy

system offering superior high

temperature and moisture

resistance performance in outdoor

systems. The epoxy contains both

uv-a and uv-b inhibitors to reduce

the effects of long term exposure

to direct sunlight.

Please contact your Agilent

Technologies Representative for

more information and design for

manufacture advice. Application

Brief I-024 Pulsed Operating

Ranges for AlInGaP LEDs vs.

Projected Long Term Light

Output Performance and other

application information is available

at www.agilent.com/go/led_lamps.

Package Dimensions

2.35 (0.093)

MAX.

5.80 ± 0.20

(0.228 ± 0.008)

5.00 ± 0.20

(0.197 ± 0.008)

31.60

(1.244) MIN.

0.70 (0.028)

MAX.

1.00

(0.039)MIN.

2.54 ± 0.38

(0.100 ± 0.015)

0.50 ± 0.10

(0.020 ± 0.004)SQ. TYP.

CATHODE

LEAD

CATHODE

FLAT

8.71 ± 0.20

(0.343 ± 0.008

1.14 ± 0.20

(0.045 ± 0.008)

Note:

All dimensions are in mm (inches).

Part Number Minimum Radiometric Intensity Maximum Forward Voltage

(mW/Sr) at 20 mA (V) at 20 mA

HLMP-ED80-K0T00 7.2 2.6

HLMP-ED80-K0000 7.2 2.4

Device Selection Guide

Absolute Maximum Ratings at TA = 25°C

DC Forward Current[1,2,3] ............................................................ 50 mA

Peak Pulsed Forward Current[2,3] .............................................. 100 mA

Average Forward Current ............................................................ 30 mA

Reverse Voltage (IR = 100 µA) ......................................................... 5 V

LED Junction Temperature.......................................................... 130°C

Operating Temperature ..............................................–40°C to +100°C

Storage Temperature ..................................................–40°C to +120°C

Dip/Drag Solder Temperature................................ 260°C for 6 seconds

Through-the-Wave Preheat Temperature ..................................... 145°C

Through-the-Wave Solder Temperature ................. 245°C for 3 seconds

[1.59 mm (0.060 in.) below seating plane]

Notes:

1. Derate linearly as shown in Figure 4.

2. For long term performance with minimal light output degradation, drive currents

between 10 mA and 30 mA are recommended. For more information on recommended

drive conditions, please refer to HP Application Brief I-024 (5966-3087E).

3. Please contact your Agilent sales representative about operating currents below

10 mA.

Part Numbering System

HLMP - x x x x - x x x xx

Mechanical Option

00: Bulk

VF Bin Selections

0: Maximum VF 2.4 V

T: Maximum VF 2.6 V

Maximum Intensity Bin

0: No maximum Iv bin limit

Minimum Intensity Bin

Refer to device selection guide

Color

D: 630 nm red

Package

E: T-1 3/4 (5 mm) round lamp

Electrical/Optical Characteristics at TA = 25°C

Parameter Symbol Min. Typ. Max. Units Test Conditions

Forward Voltage

ED80-xx0xx VF2.00 2.40 V IF = 20 mA

ED80-xxTxx 2.35 2.60

Reverse Voltage VR520 VI

= 100 µA

Peak Wavelength Peak of Wavelength of

λPEAK 639 nm Spectral Distribution

at IF = 20 mA

Dominant Wavelength[1] λd630 nm

Spectral Halfwidth ∆λ1/2 17 nm Wavelength Width at

Spectral Distribution

1/2 Power Point at

IF = 20 mA

Speed of Response τs20 ns Exponential Time

Constant, e-t/τ

Capacitance C 40 pF VF = 0, f = 1 MHz

Thermal Resistance RΘJ-PIN 240 °C/W LED Junction-to-Cathode

Lead

Luminous Efficacy[5] ηv155 lm/W Emitted Luminous

Power/Emitted Radiant

Power at IF = 20 mA

Viewing Angle[2] 2 θ1/230 Deg.

Radiometric Intensity Ie7.23 50.50 mW/sr Emitted Radiant Power

at IF = 20 mA

Notes:

1. Dominant Wavelength, λd, is derived from the CIE Chromaticity Diagram referenced to Illuminant E.

2. θ1/2 is the off-axis angle where the luminous intensity is one half the on-axis intensity.

3. The radiometric intensity is measured on the mechanical axis of the lamp package.

4. The optical axis is closely aligned with the package mechanical axis.

5. The luminous intensity, Iv, in candelas, may be found from the equation Iv = Ieηv, where Ie is the radiometric intensity in watts per

steradian and ηv is the luminous efficacy in lumens/watt.

Figure 2a. Forward Current vs. Forward

Voltage for Option -xx0xx.

Figure 1. Relative Intensity vs. Peak Wavelength.

WAVELENGTH – nm

RELATIVE INTENSITY

550 600 650 700

1.0

0.5

RED

CURRENT – mA

1.0

– FORWARD VOLTAGE – V

2.5

100

1.5 2.0

3.0

RED

Bin ID Min. Max.

K 8.5 10.2

L 10.2 12.2

M 12.2 14.7

N 14.7 17.6

P 17.6 21.2

Q 21.2 25.4

R 25.4 30.5

S 30.5 36.5

T 36.5 43.9

Radiometric Intensity

Bin Limits (mW/sr at 20 mA)

Figure 5. Representative Spatial Radiation Pattern for 30°

Viewing Angle Lamps.

Figure 3. Relative Luminous Intensity

vs. Forward Current. Figure 4. Maximum Forward Current

vs. Ambient Temperature. Derating

Based on TJMAX = 130°C.

– FORWARD CURRENT – mA

– AMBIENT TEMPERATURE – °C

40 80

20 60 100

Rθ

= 585° C/W

Rθ

= 780° C/W

RELATIVE RADIOMETRIC INTENSITY

(NORMALIZED AT 20 mA)

– DC FORWARD CURRENT – mA

2.0

1.5

1.0

0.5

20 50

2.5

10 30

NORMALIZED RADIOMETRIC INTENSITY

1.00

ANGULAR DISPLACEMENT – DEGREES

0.80

0.60

0.50

0.70

0.20

0.10

0.30

0.40

0.90

-20 -15 -10 0 5 10 15 20 25-25 -5

Notes:

1. Tolerance for each bin will be ± 15%.

2. Bin categories are established for

classification of products. Products

may not be available in all bin

categories.

Figure 2b. Forward Current vs.

Forward Voltage for Option -xxTxx.

FORWARD CURRENT

FORWARD VOLTAGE – V

2.5

1.5 2.0 3.0

1.00.5

www.agilent.com/semiconductors

For product information and a complete list of

distributors, please go to our web site.

For technical assistance call:

Americas/Canada: +1 (800) 235-0312 or

(408) 654-8675

Europe: +49 (0) 6441 92460

China: 10800 650 0017

Hong Kong: (+65) 6271 2451

India, Australia, New Zealand: (+65) 6271 2394

Japan: (+81 3) 3335-8152(Domestic/Interna-

tional), or 0120-61-1280(Domestic Only)

Korea: (+65) 6271 2194

Malaysia, Singapore: (+65) 6271 2054

Taiwan: (+65) 6271 2654

Data subject to change.

Obsoletes 5988-7360EN

September 18, 2002

5988-7916EN