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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD7030BL/FDU7030BL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. * 56 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V RDS(ON) = 13 m @ VGS = 4.5 V * Low gate charge * Fast Switching Applications * High performance trench technology for extremely low RDS(ON) * DC/DC converter * Motor Drives D D G S I-PAK (TO-251AA) D-PAK TO-252 (TO-252) G G D S Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current @TC=25C (Note 3) 56 A @TA=25C (Note 1a) 14 Pulsed (Note 1a) 100 PD Power Dissipation TJ, TSTG @TC=25C (Note 3) 60 @TA=25C (Note 1a) 2.8 @TA=25C (Note 1b) W 1.3 Operating and Storage Junction Temperature Range -55 to +175 C C/W Thermal Characteristics RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient RJA (Note 1) 2.5 (Note 1a) 45 (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package FDD7030BL FDD7030BL FDU7030BL FDU7030BL 2003 Fairchild Semiconductor Corp. Reel Size Tape width Quantity D-PAK (TO-252) 13'' 12mm 2500 units I-PAK (TO-251) Tube N/A 75 FDD7030BL/FDU7030BL Rev CW) FDD7030BL/FDU7030BL June 2003 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID= 14A 174 mJ 14 A Off Characteristics ID = 250 A BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, VDS = 24 V, VGS = 0 V 1 A IGSS Gate-Body Leakage VGS = 20 V, VDS = 0 V 100 nA 1.8 -5 3 V mV/C 7.5 9.6 11 9.5 13 16 m On Characteristics 30 ID = 250 A,Referenced to 25C V 26 mV/C (Note 2) VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 12 A VGS = 10 V, ID = 14 A,TJ=125C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 14 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 50 A 56 S 1425 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VOSC = 15 mV, f = 1.0 MHz 350 pF 150 pF 1.3 pF (Note 2) VDD = 15 V, VGS = 10 V, VDS = 15V, VGS = 5 V ID = 1 A, RGEN = 6 ID = 14 A, 11 20 ns 9 18 ns 31 50 ns 13 23 ns 14 20 nC 4 nC 5 nC FDD7030BL/FDU7030BL Rev. B(W) FDD7030BL/FDU7030BL Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 2.3 A (Note 2) IF = 14 A, diF/dt = 100 A/s 0.74 2.3 A 1.2 V 23 nS 11 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 45C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD7030BL/FDU7030BL Rev. B(W) FDD7030BL/FDU7030BL Electrical Characteristics FDD7030BL/FDU7030BL Typical Characteristics 60 ID, DRAIN CURRENT (A) 50 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 VGS=10V 3.5V 6.0V 4.5V 40 30 3.0V 20 10 VGS = 3.0V 2.8 2.6 2.4 2.2 2 1.8 4.0V 1.6 4.5V 1.4 5.0V 1.2 10V 0.8 0 0 0.5 1 1.5 2 0 2.5 10 20 Figure 1. On-Region Characteristics 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.8 0.03 ID = 14A VGS = 10V 1.6 RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.6 ID = 7A 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 -50 -25 0 25 50 75 100 125 150 175 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 6.0V 1 40 30 TA =125oC 20 25oC 10 -55oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 4 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD7030BL/FDU7030BL Rev. B(W) 2000 ID = 14A VDS = 10V f = 1MHz VGS = 0 V 15V 1600 8 20V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 CISS 1200 800 COSS 2 400 0 0 CRSS 0 5 10 15 20 25 30 0 Figure 7. Gate Charge Characteristics 10 15 20 25 30 Figure 8. Capacitance Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 100 100s 100 1ms RDS(ON) LIMIT 10ms 100ms 1s 10 10s DC 1 VGS = 10V SINGLE PULSE RJA = 96oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 60 40 20 0 0.01 100 SINGLE PULSE RJA = 96C/W TA = 25C 80 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) D = 0.5 R JA (t) = r(t) * R JA R JA = 96 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.0 t2 0.01 T J - T A = P * R JA (t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD7030BL/FDU7030BL Rev. 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