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June 2003
2003 Fairchild Semiconductor Corp. FDD7030BL/FDU7030BL Rev CW)
FDD7030BL/FDU7030BL
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 56 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
G
S
D
TO-252
D-PAK
(TO-252) GDS
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDContinuous Drain Current @TC=25°C (Note 3) 56 A
@TA=25°C (Note 1a) 14
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 60
@TA=25°C (Note 1a) 2.8
PD
@TA=25°C (Note 1b) 1.3
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.5 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45
RθJA (Note 1b) 96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD7030BL FDD7030BL D-PAK (TO-252) 13’’ 12mm 2500 units
FDU7030BL FDU7030BL I-PAK (TO-251) Tube N/A 75
FDD7030BL/FDU7030BL
FDD7030BL/FDU7030BL Rev. B(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 14A 174 mJ
IAS Drain-Source Avalanche Current 14 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA,Referenced to 25°C26 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250 µA11.8 3V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 250 µA,Referenced to 25°C–5 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 14 A,TJ=125°C
7.5
9.6
11
9.5
13
16
mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 10 V, ID = 14 A 56 S
Dynamic Characteristics
Ciss Input Capacitance 1425 pF
Coss Output Capacitance 350 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 150 pF
RGGate Resistance VOSC = 15 mV, f = 1.0 MHz 1.3 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 11 20 ns
trTurn–On Rise Time 9 18 ns
td(off) Turn–Off Delay Time 31 50 ns
tfTurn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω13 23 ns
QgTotal Gate Charge 14 20 nC
Qgs Gate–Source Charge 4nC
Qgd Gate–Drain Charge
VDS = 15V, ID = 14 A,
VGS = 5 V 5nC
FDD7030BL/FDU7030BL
FDD7030BL/FDU7030BL Rev. B(W)
D
R
P
DS(ON)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current 2.3 A
VSD Drain–Source Diode Forward Voltage V
GS
= 0 V, I
S
= 2.3 A (Note 2) 0.74 1.2 V
trr Diode Reverse Recovery Time 23 nS
Qrr Diode Reverse Recovery Charge
I
F
= 14 A, d
iF
/d
t
= 100 A/µs
11 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 45°C/W when mounted on a
1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD7030BL/FDU7030BL
FDD7030BL/FDU7030BL Rev. B(W)
Typical Characteristics
0
10
20
30
40
50
60
00.5 11.5 22.5
VDS, DRAIN-SOURCE VOLTAGE (V)
ID
, DRAIN CURRENT (A)
3.5V
VGS=10V 4.0V
3.0V
4.5V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 10 20 30 40 50 60
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V
4.0V
6.0V
4.5V 5.0V
10V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 14A
VGS = 10V
0.005
0.01
0.015
0.02
0.025
0.03
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = 7A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
10
20
30
40
50
60
1.5 22.5 33.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TA =125oC
25oC
VDS = 5V
-55oC0.0001
0.001
0.01
0.1
1
10
100
00.2 0.4 0.6 0.8 11.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD7030BL/FDU7030BL
FDD7030BL/FDU7030BL Rev. B(W)
Typical Characteristics
0
2
4
6
8
10
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
VGS
, GATE-SOURCE VOLTAGE (V)
ID = 14A VDS = 10V 15V
20V
0
400
800
1200
1600
2000
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID
, DRAIN CURRENT (A)
DC
1s
100ms
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
10ms
1ms
100µs
10s
0
20
40
60
80
100
0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
0.001
0.01
0.1
1
0.001 0.01 0.1 110 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.0
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD7030BL/FDU7030BL
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
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