Logic-Level Power MOSFETs RFM12NO8L, RFM12N10L, RFP12NO8L, RFP12N10L N-Channel Logic Level File Number 1512 Power Field-Effect Transistors (L? FET) 12 A, 80 V and 100 V ros(on): 0.2 Q Features: Design optimized for 5 volt gate drive Can be driven directly from Q-MOS, N-MOS, TTL Circuits Compatible with automotive drive requirements SOA is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance Majority carrier device The RFM12NO8L and RFM12N10L and the RFP12NO8L and RFP12N10L* are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic jevel (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated con- duction at gate biases in the 3-5 volt range, thereby facilitat- ing true on-off power control directly from logic circuit supply voltages. The RFM-series types are supplied in the JEDEC TO- 204AA steel package and the RFP-series types in the JEDEC TO-220AB plastic package. Because of space limitations branding (marking) on type RFP12NO8L is F12NO8L and on type RFP12N1OL is FI2N10L. The RFM and RFP series were formerly RCA developmen- tal number TA9526 and TA9527. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): RFM12NO8L DRAIN-SOURCE VOLTAGE ........... Voss 80 DRAIN-GATE VOLTAGE (Rgs=1 MQ) .... Voca 80 GATE-SOURCE VOLTAGE ............. Ves DRAIN CURRENT, RMS Continuous ...... Ip Puised ..........000. lom POWER DISSIPATION @ Tc=25C ....... Py 75 Derate above Tc=25C 0.6 OPERATING AND STORAGE TEMPERATURE .............--05- Ti, Tstg 5-26 $s 92CS -33741 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS REM12NO8L SOURCE (range? RFM12N10L Re ; GATE 92CS-37553 JEDEC TO-204AA RFP12NO8L RFP12N10L. SOURCE |p, (FLANGE? | O _ onan TOP View E cave 92c$-39526 JEDEC TO-220AB RFEM12N10L RFP12NO8L RFP12N10L 100 8&0 100 Vv 100 80 100 Vv _ +10 Vv 12 a A 30 eee A 75 60 60 W 0.6 0.48 0.48 wc -5to +1590 eee CELECTRICAL CHARACTERISTICS, At Case Temperature (T-)=25 C unless otherwise specified. Logic-Level Power MOSFETs RFM12NO08L, RFM12N10L, RFP12NO8L, RFP12N10L LIMITS TEST RFM12NO8L REM12N10L CHARACTERISTIC SYMBOL | GonciTIONS RFP12NO8L RFPt2NioL__| UNITS MIN. MAX. MIN. MAX. Drain-Source Breakdown Voltage BVops lo=1 mA 80 _ 100 _ Vv Ves=0 Gate Threshold Voltage Vas(th) Vos=Vos 1 2 1 2 Vv lp=tmA Zero Gate Voltage Drain Current lpss Vps"65 V _ 1 _ = Vos80 V = = = 1 Tc=125C HA Vos=65 V _ 50 _ Vps=80 V _ = => 50 Gate-Source Leakage Current less Ves= 10 V 100 _ 100 nA Vos=0 Drain-Source On Voltage Vps(on)* Ip=6 A _ 1.2 1.2 Ves=5 V Vv Ip=12A 3.3 _ 3.3 Ves=5 V Static Drain-Source On Resistance fos(on)* Ip=6 A _ 0.2 _- 0.2 Q Vas=5 Vv Forward Transconductance Ots" Vps=10 V 40 _ 40 mho Ip=6 A . : Input Capacitance Ciss Vos#25 V 900 900 Output Capacitance Coss Ves=0 V _ 325 325 pF Reverse-Transfer Capacitance Ciss f=1MHz 170 _ 170 Turn-On Delay Time ta(on) Vp0750 V 15(typ) 50 15(typ) 50 Rise Time t, pes 7o(typ) | 150 | 70(typ) |__ 150 ns Turn-Off Delay Time ta(off} Rgs=6.25 0 100(typ) | 130 | 100(typ) | __130 Fall Time tr Vas=5 V 80(typ) 150 80(typ) 150 Thermal Resistance R@sc RFM12NO08L, _ 1.67 _ 1.67 Junction-to-Case RFM12N10L RFP12NO8L, = 2083 | 2.083 | C/W RFP12N10L. *Pulsed: Pulse duration = 300 us max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS TEST RFM12NO08L RFM12N10L CHARACTERISTIC SYMBOL | CONDITIONS RFP12NO8L RFPi2NioL__| UNITS MIN. MAX. MIN. MAX. Diode Forward Voltage Vso Isp=6 A _ 1.4 = 1.4 Vv Reverse Recovery Time tr lee4A 150(typ) 150(typ) ns dir/d,=100 A/ps Pulse Test: Width < 300 ys, duty cycle < 2%. 5-27Logic-Level Power MOSFETs RFM12NO8L, RFM12N10L, RFP12NO8L, RFP12N10L (CURVES MUST BE LINEARLY WITH INCREASE IN TEMPERATURE) Tp (MAX.) NUOUS 3 o Co o 4 oO, oo ass OPERATION IN THIS 49 REGION {S$ LIMITED 4, 2 BY Tog fon) Oy DRAIN CURRENT (Ip)-A ao Fy pss (MAX) 80.V RFMIZNOBL Voss (MAX.) 100 V RFMI2NI 2 @ 6 8 2 4 6 8 2 4 68 \ t 100 1000 ORAIN~TO-SOURCE VOLTAGE (Vpg)-V 92CS-37392 Fig. 1 - Maximum operating areas for all types. Vpg*3V Iptima VOLTAGE RFMI2NOBL RFMI2ZNIOL RFPI2NOBL RFPI2NIOL CASE TEMPERATURE (Tco)~ VYUNCTION TEMPERATURE (Ty) C 9208-37393 92CS-37211 Fig. 2 Power dissipation vs. temperature derating curve Fig. 3 Typical normalized gate threshold voltage as a function for all types. of junction temperature for all types. Tp <68 Yes * 5V Vos lov PULSE TEST PULSE DURATION oO o < ~ 9 DRAIN CURRENT [Ip(on)JA 150 -50 oO loo JUNCTION TEMPERATURE (Ty )*C 9208-37212 Fig. 4 Normalized drain-to-source on resistance to junction temperature for all types. Fig. 5 Typical transfer characteristics for all types. GATE- TO-SOURCE VOLTAGE ( Ves) Vv 92CS- 37213 5-28Logic-Level Power MOSFETs RFM12NO8L, RFM12N10L, RFP12NO8L, RFP12N10L PULSE TEST PULSE DURATION*60 us DUTY CYCLE s 2% 8 CASE TEMPERATURE (Tc } 225C 75 Z 6 2 g GATE SOURCE g | 50 VOUTAGE Vop = Ypss. I a as 25 42 a lo Ig (REF) Ig (REFS 207FTaen Pog me TIME Microseconds 920537843 ' DRAIN-TO- SOURCE VOLTAGE { Vos~V 9208-37215 Fig. 6 - Normalized switching waveforms for constant gate-current. Fig. 7 Typical saturation characteristics for all types. Refer to RCA application notes AN-7254 and AN-7260. FREQUENCY (f) = 1 MHz PULSE TEST PULSE DURATION *80ys DUTY CYCLE < 2 DRAIN-TO- SOURCE ON RESISTANCE 2 DRAIN- TO- SOURCE VOLTAGE (Vpg)-V DRAIN (Ip A 92CS- 37216 92CS-37217 Fig. 8 Typical drain-to-source on resistance as a function Fig. 9 Capacitance as a function of drain-to-source of drain current for all types. voltage for all types. KELVIN CONTACT Vos PULSE TEST PULSE DURATION= 80ys DUTY CYCLE < 2% FORWARD TRAN SCONDUCTANCE (gfs}mho 92CS-37359 7 8 9 10 DRAIN CURRENT (Ip)A 92Cs-37218 Fig. 10 Typical forward transconductance as a function Fig. 11 Switching Time Test Circuit. of drain current for all types. g 5-29