1N5820RL - STMicroelectronics - Datasheet.Directory

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1N582x

July 2003 - Ed: 3A

LOW DROP POWER SCHOTTKY RECTIFIER

Axial Power Schottky rectifier suited for Switch

Mode Power Supplies and high frequency DC to

DC converters. Packaged in DO-201AD these

devices are intended for use in low voltage, high

frequency inverters, free wheeling, polarity

protection and small battery chargers.

DESCRIPTION

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

EXTREMELY FAST SWITCHING

LOW FORWARD VOLTAGE DROP

AVALANCHE CAPABILITY SPECIFIED

FEATURES AND BENEFITS

Symbol Parameter Value Unit

1N5820 1N5821 1N5822

VRRM Repetitive peak reverse voltage 20 30 40 V

IF(RMS) RMS forward current 10 A

IF(AV) Average forward current TL= 100°Cδ= 0.5 3A

= 110°Cδ= 0.5 33 A

FSM Surge non repetitive forward

current tp=10ms

Sinusoidal 80 A

PARM Repetitive peak avalanche

power tp = 1µs Tj = 25°C 1700 W

Tstg Storage temperature range - 65 to + 150 °C

Tj Maximum operating junction temperature * 150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

ABSOLUTE RATINGS (limiting values)

IF(AV) 3A

RRM 40 V

Tj150°C

VF(max) 0.475 V

MAIN PRODUCTS CHARACTERISTICS

DO-201AD

dPtot

dTj Rth j a

<−

()

thermal runaway condition for a diode on its own heatsink

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Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit

IR*Reverse leakage

current Tj=25°CV

RRM 222mA

Tj = 100°C20 20 20 mA

VF*Forward voltage drop Tj = 25°CI

=3A 0.475 0.5 0.525 V

Tj=25°CI

= 9.4 A 0.85 0.9 0.95 V

Pulse test : * tp = 380 µs, δ<2%

To evaluate the conduction losses use the following equations :

P=0.33xI

F(AV) + 0.035 IF2(RMS ) for 1N5820 / 1N5821

P=0.33xI

F(AV) + 0.060 IF2(RMS ) for 1N5822

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient Lead length = 10 mm 80 °C/W

Rth (j-l) Junction to lead Lead length = 10 mm 25 °C/W

THERMAL RESISTANCES

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8 PF(av)(W)

IF(av) (A)

δ=tp/T tp

δ= 0.2 δ= 0.5

δ= 1

δ= 0.05 δ= 0.1

Fig. 1: Average forward power dissipation versus

average forward current (1N5820/1N5821).

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0 PF(av)(W)

IF(av) (A)

δ=tp/T tp

δ= 0.2 δ= 0.5

δ= 1

δ= 0.05

δ= 0.1

Fig. 2: Average forward power dissipation versus

average forward current (1N5822).

0.2

0.4

0.6

0.8

1.2

0 25 50 75 100 125 150

T (°C)

P(t)

P (25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.10.01 1

0.1

10 100 1000

t (µs)

P(t)

P (1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.

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0 25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(av)(A)

Tamb(°C)

δ=tp/T tp

Rth(j-a)=80°C/W

Rth(j-a)=Rth(j-l)=25°C/W

Fig. 5-1: Average forward current versus ambient

temperature (δ=0.5) (1N5820/1N5821).

1E-3 1E-2 1E-1 1E+0

16 IM(A)

t(s)

Ta=100°C

Ta=75°C

Ta=25°C

δ=0.5

Fig. 6-1: Non repetitive surge peak forward

current versus overload duration (maximum

values) (1N5820/1N5821).

1E-1 1E+0 1E+1 1E+2 1E+3

0.0

0.2

0.4

0.6

0.8

1.0 Zth(j-a)/Rth(j-a)

δ=tp/T tp

tp(s)

δ= 0.1

δ= 0.2

δ= 0.5

Single pulse

Fig. 7: Relative variation of thermal impedance

junction to ambient versus pulse duration (epoxy

printed circuit board, e(Cu)=35mm, recommended

pad layout).

0 25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5 IF(av)(A)

Tamb(°C)

δ=tp/T tp

Rth(j-a)=80°C/W

Rth(j-a)=Rth(j-l)=25°C/W

Fig. 5-2: Average forward current versus ambient

temperature (δ=0.5) (1N5822).

1E-3 1E-2 1E-1 1E+0

12 IM(A)

t(s)

Ta=100°C

Ta=75°C

Ta=25°C

δ=0.5

Fig. 6-2: Non repetitive surge peak forward

current versus overload duration (maximum

values) (1N5822).

12 5102040

100

600 C(pF)

VR(V)

1N5822

1N5820

1N5821

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

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0 5 10 15 20 25 30

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 IR(mA)

VR(V)

Tj=100°C

Tj=25°C

1N5820

1N5821

Tj=125°C

Fig. 9-1: Reverse leakage current versus reverse

voltage applied (typical values) (1N5820/1N5821).

0 5 10 15 20 25 30 35 40

1E-3

1E-2

1E-1

1E+0

1E+1

5E+1 IR(mA)

VR(V)

Tj=100°C

Tj=25°C

Tj=125°C

Fig. 9-2: Reverse leakage current versus reverse

voltage applied (typical values) (1N5822).

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

0.01

0.10

1.00

10.00

50.00 IFM(A)

VFM(V)

Tj=25°C

Tj=100°C

Tj=125°C

Fig. 10-1: Forward voltage drop versus forward

current (typical values) (1N5820/1N5821).

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.01

0.10

1.00

10.00

50.00 IFM(A)

VFM(V)

Tj=25°C

Tj=100°C

Tj=125°C

Fig. 10-2: Forward voltage drop versus forward

current (typical values) (1N5822).

1 10 100 1000

100 IFSM(A)

Number of cycles

F=50Hz Tj initial=25°C

Fig. 11: Non repetitive surge peak forward current

versus number of cycles.

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Ordering type Marking Package Weight Base qty Delivery mode

1N582x Part number

cathode ring DO-201AD 1.12g 600 Ammopack

1N582xRL Part number

cathode ring DO-201AD 1.12g 1900 Tape & reel

EPOXY MEETS UL94,V0

PACKAGE MECHANICAL DATA

DO-201AD plastic

ØD ØD

ØC

note 2

note 1

REF.

DIMENSIONS

NOTESMillimeters Inches

Min. Max. Min. Max.

A 9.50 0.374 1 - The lead diameter ♠D is not controlled over zone E

2 - The minimum axial length within which the device may be

placed with its leads bent at right angles is 0.59"(15 mm)

B 25.40 1.000

♠C 5.30 0.209

♠D 1.30 0.051

E 1.25 0.049