PRODUCT CATALOG SOUCrON oev:025, 0. N-CHANNEL ENHANCEMENT MOS FET oe oo 1000V, SA, 1.49 ABSOLUTE MAXIMUM RATINGS S FON 1 0 PARAMETER SYMBOL UNITS D O JEA Drain-source Volt.(1) Voss 1000 Vde SDFSN1OO VJEB Creer ome) eis voGR 1000 Vdc Gate-S Volt SDFON1IOO VJEC gate Source Vol tage v6s 20 Vde Drain Current Continuous SDFSONIOO JED (Te = 25C) ID 9 Ade Drain Current Pulsed(3) 1DM 36 A FEATURES Total Power Dissipation PD 300 W Power Dissipation . @ RUGGED PACKAGE Derating > 25C e4 ws @ HI-REL CONSTRUCTION Operating & Storage Temp. | TU/Tsis -55 TO +150 c @ CERAMIC EYELETS Thermal Resistance RthJe 0.42 C/W @ LEAD BENDING OPTIONS Max.Lead temperature TL 300 C @ COPPER CORED 52 ALLOY PINS @ LOW IR LOSSES , =one UNLESS OTHER- @ LOW THERMAL RESISTANCE ELECTRICAL CHARACTERISTICS Te =25t (Wise SPECIFIED @ OPTIONAL MIL-S-19500 - PARAMETER [SYMBOL] TEST CONDITIONS [MIN] TYP [MAX [UNITS SCREENTNG Beeson ce, M(aR)DSS| On oco WA 1ooo - | - | v SCHEMATIC Gare threshold |vgs(TH)|VDS=VGS 1D=250 MA [2.0] - |4.5| V TERMINAL CONNECTIONS Gate Source IGSS |VGS=4+20 V _ ~ |100] nA G H Leakage . ke Zero Gate VDS=MAX.RATING vGs=0|[ - | [250] HA 1} GATE 1 | ORAIN Voltage Drain | IDSS |[ypS=0.8 MAX.RATING 2[DRAIN |2| SOURCE | |Current VGE=0 TJstasec | | {1000] HA 37;SOURCE |3] GATE Static Drain- = STANDARD BEND Source On-state|ROs(ON) yesato - | - |i.4]} 9 ConricuraTions | UE A | [Resistance Fe TWS2 SOV ( JEC Conductance (2)| 9'S | 1ps=4.5a 6.0] - | |S(0) 3 Input Capacitance] CISS - [4500] - pF Output Capacitancel COSS VGS=OV VDS=25 V - {550] - pF , : Reverse Transfer CRSS f=1.0 MHz - i160] - pF Capacitance S 23 Turn-On Delay /td(on)|vpp=S00v Z0=S0a - | - |100| ns 1 Rise Time tr (nosker. tehing ti - {| - [110] ns Turn-Off Delay|td(off)] are essentially indepen- - - [220] ns Fall Time - tf dent. of operating temp.) _ _ 105| ns Total Gate Ch wvie 3 (Gate-Source Plus Qg ~ 1145] - J ac " D U 1 2 Gate-Drain) VGS=10V, ID=9A H23 Sele souree | one [fesstwevnmcrntine, [Tas | [ne . a nde naen e (CUSTOM BEND OPTIONS AVAILABLE) (ui iter) oad ally independent of th ~ Tool - | nc STANDARD BEND harge CONF IGURAT IONS JEB JED SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc= 25C (HMLESS_OTHERT PARAMETER SYMBOL. TEST CONDITIONS MIN | TYP .|MAX. UNITS Continuous tet Source Current} 1S Moe tet chemi ne the -}|- | 931]A (Body Diode) poeonal reverse, ulse Source -N junction recti- Current (Body | ISM |fier (See schematic)| - | ~ | 36] A Diode) (1) ; Diode Forward IF=9A VGS=0V - Voltage (2) vsD Tc=+25C ~ 1.5) V Reverse =4950 - - Recovery Time tre lo C 600 ns . Reverse Re- ty = _ (CUSTOM BEND OPTIONS AVAILABLE) covery Charge | Orr |di/dt=100A/ HS B.S} | HC 2) Pulse test: Pulse Width <300nS, Duty Cycle <2%. REL . 3/93 iB TU = 25C to 150C. 3) Repetitive Rating: Pulse Width limited By Max.junction Temperature. A48 -1