TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP32 Series 40 W at 25C Case Temperature 3 A Continuous Collector Current B 1 5 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) SYMBOL TIP31 80 TIP31A 100 TIP31B V CBO 140 TIP31 40 TIP31B VCEO Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. 60 80 V V 100 TIP31C Emitter-base voltage UNIT 120 TIP31C TIP31A Collector-emitter voltage (IB = 0) VALUE VEBO 5 V IC 3 A ICM 5 A IB 1 A Ptot 40 W Ptot 2 W 1/2LIC2 32 mJ C Tj -65 to +150 Tstg -65 to +150 C TL 250 C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.32 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) TIP31 40 TIP31A 60 TIP31B 80 TIP31C 100 TYP MAX UNIT V VCE = 80 V VBE = 0 TIP31 0.2 Collector-emitter VCE = 100 V VBE = 0 TIP31A 0.2 cut-off current VCE = 120 V VBE = 0 TIP31B 0.2 VCE = 140 V VBE = 0 TIP31C 0.2 Collector cut-off VCE = 30 V IB = 0 TIP31/31A 0.3 current VCE = 60 V IB = 0 TIP31B/31C 0.3 VEB = 5V IC = 0 Forward current VCE = 4V IC = 1A transfer ratio VCE = 4V IC = 3A IB = 375 mA IC = 3A (see Notes 5 and 6) 1.2 V VCE = 4V IC = 3A (see Notes 5 and 6) 1.8 V VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 1 mA mA mA 25 (see Notes 5 and 6) 10 50 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP MAX UNIT 3.125 C/W 62.5 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn-off time VBE(off) = -4.3 V RL = 30 tp = 20 s, dc 2% 0.5 s 2 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS631AA VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2% 100 10 0*001 0*01 0*1 1*0 10 TCS631AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1*0 0*1 IC = IC = IC = IC = 100 mA 300 mA 1A 3A 0*01 0*1 IC - Collector Current - A 1*0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1*0 TCS631AC VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25C 0*9 0*8 0*7 0*6 0*5 0*01 0*1 1*0 10 IC - Collector Current - A Figure 3. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS631AA tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1*0 0*1 TIP31 TIP31A TIP31B TIP31C 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AA Ptot - Maximum Power Dissipation - W 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.