1N4001GP-1N4007GP
1N4001GP-1N4007GP, Rev. A
1N4001GP - 1N4007GP
1.0 Ampere Glass Passivated Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Features
•Low forward voltage drop.
•High surge current capability.
• High reliability.
• High current capability.
Parameter Device Units
4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP
Peak Repeti tive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V
Maximum Reverse Current
@ rated VR TA = 25°C
TA = 125°C5.0
50 µA
µA
Maximum Forward Voltage @ 1.0 A 1.1 V
Typical Junction Capacitance
VR = 4.0 V, f = 1. 0 MHz 8.0 pF
DO-41
COLOR BAND DENOTES CATHODE
Symbol Parameter Value Units
IOAverage Rectified Current
.375 " lead length @ TA = 75°C1.0 A
if(surge) Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)30 A
PDTotal Device Dissipation
Derate above 25°C3.0
20 W
mW/°C
RθJA Thermal Resistance, Junction to ambient 50 °C/W
TstgStorage Temperature Range -65 to +175 °C
TJOperating Junction Temperature -65 to +175 °C
1.0 min(25.4)
0.107(2.72)
0.080(2.03)
0.034(0.86)
0.028(0.71)
0.205(5.21)
0.160(4.06)
Dimensions in
inches (mm)
Discrete POWER & Signal
Technologies
1N4001GP-1N4007GP
1N4001GP-1N4007GP, Rev. A
Glass Passivated Rectifiers
(continued)
Typical Characteristics
Fo rw ard Current Der ati ng Cur ve
0 25 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
AMBIENT TEMPERATURE ( C)
FO RWAR D CU RRENT (A )
º
SINGLE PHASE
HA LF WAVE
60 HZ
RESIS TIVE OR
I NDUCTI V E LOAD
.375" 9.0 mm LEAD
LENGTHS
Non -Repetitive Su rge Current
12 51020 50100
0
10
20
30
40
NUMBER OF CY CLE S AT 60Hz
P EA K FORW AR D SU R GE C UR RE N T (A )
Forward Charac t eristi cs
0.4 0.6 0.8 1 1.2 1.4 1.6
0.01
0.1
1
10
FORWARD VOLTAGE (V)
FOR WARD CURR ENT ( A)
Pulse Widt h = 200µS
2% Duty Cycl e
T = 25 C
º
J
Pulse Widt h = 300µS
1% Duty Cycl e
T = 25 C
º
A
Typical Junction Capacitance
0.1 0.5 1 2 5 10
1
2
5
10
20
50
100
REVERSE VOLTAGE (V)
JUNCT ION CA PA CIT A N C E (pF )
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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Definition of Terms
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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