90V
80V
85V
90V
7V
4A
2A
50W
0.200°C
–65 to 200°C
7/00
2N6261
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage (with base open)
VCER(sus) External Base – Emitter (RBE) = 100
W
)
VCEV(sus) Collector – Emitter Voltage (with base reverse biased)
VEBO Emitter to Base Voltage
ICContinuous Collector Current
IBContinuous Base Current
PDTotal Power Dissipation at Tcase = 25°C
Derate above 25°C
Tj,Tstg, Operating and Storage Junction Temperature Range
(0.145) rad.
max. 3.61 (0.142)
rad.
min.
HOMETAXIAL-BASE
MEDIUM POWER SILICON
NPN TRANSISTOR
FEATURES
• fT = 800 kHz at 0.2A
• Maximum Safe-area of operation curves
for dc and pulse operation.
• VCEV(sus) = 90V min
• Low Saturation Voltage:
VCE(sat = 1.0V at IC = 0.5A)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
APPLICATIONS
• Power Switching Circuits
• Series and shunt-regulator driver and
output stages
• High-fidelity amplifers
• Solenoid Drivers
MECHANICAL DATA
Dimensions in mm(inches)
TO–66
THERMAL CHARACTERISTICS
R
q
JC Thermal Resistance, Junction to Case 3.5 °C/W
In accordance with JEDEC registration data format