SQUARE D CO/ GENERAL bO D MM 85255048 0001857 & 3918590 GENERAL SEMICONDUCTOR , 60C 01857 GENERAL _ so SEMICONDUCTOR REC mR arg +> INDUSTRIES, Inc. T0-3 ISOLATED COLLECTOR HIGH SPEED, HIGH POWER SWITCHING TRANSISTOR The Isolated collector package configuration has been designed for use in switching applications where EMI (Electromagnetic Interference) must be controlled. Combining economy of the industry standard TO-3 power package and the versatility of an isolated collector design, this family of tran- Isolated Collector sistors addresses numerous problems encountered in high voltage switching circuits. Reduction of transistor collector to case capacitance can decrease conducted interference by 20 to 30 db. Also, ground loop currents are reduced to an extremely low level. Costly assembly opera- tions are eliminated by removal of insulating hardware. Fewer piece parts must be purchased and the hi-pot" testing is eliminated, This design also provides increased reliability. Transistor case and heat- sink nonuniformities no longer can break through insulating surfaces or washers. Lower operating junction temperatures result from the reduced junction to heatsink thermal resistance. These transistors have been specifically designed and engineered for high speed, high voltage switching applications where the designer is concerned with optimizing power conversion efficiency, maintaining EMI at acceptable levels and providing a high degree of reliability. This series utilizes General Semiconductor Industries' unique C2R process. Amanufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability. FEATURES CHARACTERISTICS Reduced Capacitance Collector to Case - Conducted EMI ~ Reduced from 250pf to = 8pf - Radiated EM! e Junction to Heatsink Thermal Resistance -Common Mode Interference - Reduced 0.2 to 0.5C/W cf~ Simplified Assembly * Isolation Voltage Collector fo Case F-30 Improved Reliability - > 1500V (pin limited) (3 Terminal TO-3) Increased Power Handling lsolation Resistance Reduced Electrical Shock Hazard -> 10120 te PWR hee Vee (sat) Switching (MAX). For Detailed (cont,)"") ~ Voeo Watts wl Veg = SV [Ig = 0.2 1g = fp, = 0.2 1c Characteristics -|- Sec Lt ty Sec See Data Sheet 08 0.25 2.0 0.50 GSTR6030 7 1OF: : 0.8 0.25 2.0 0.50 GSTR6035 10 | : 0.8 0,25 20 0.50 GSTR6040 0. 18 0.6 0. 75 0.18 0.6 0.18 XGSR7540 0.8 47 GSTR8035 70 0.47 GSTR8040 0.8 . 70 0.47 GSTR8045 0. 0 GSDR10020 0.30 GSDRI1 0.50 XGSRI1 0.50 XGSRI1 XGSR10040 0.47 GSTR12030 0.47 GSTR12035 0.47 1 GSDR1 2N6653 2N6655 GSDS50020 Be ea sete SEMICONDUCTOR INDUSTRIES, TN 2003 West Tenth Place, Tempe, Arizona 85281 * 602-968-3701 Niemeahies Mailing Address: P.O. Box 3078 C2R is a Registered Trademark of General Semiconductor Industries. Inc Patent PendingNemes SQUARE D CO/ GENERAL bO D MM 4525504 0001453 6 3918590 GENERAL SEMICONDUCTOR 60c 01858 =0 7-330} _ CONDUCTED EMISSIONS dB/.A/MHz (e) STANDARD TO-3 MOUNTING (3 pt ROLLING AVERAGE)* 140 re T l _ COLLECTOR CONNECTION 120 Ap petee Cd STD. T0-3 SNE 100 | INSULATING e Tete tet etoa8 | WASHER 80 _ HEAT SINK So 60 4A STD. CONFIGURATION oN INSULATING O-0 TO-3/ISOLATED @ CENTERING | | BUSHINGS 40 a 14K 1M 1M 10M 100M FREQUENCY (Hz) GROUND WIRE CONDUCTION AT TRANSISTOR TURN-OFF TO-3/ISOLATED lord, (1Aldiv.) STA. TO-3 TO-3/ISOLATED Igra, (1A/div.)* TO-3/ISOLATED HEAT SINK -! L ig (1Aldiv.) HORIZ: 1 pesecidiv. * Representative performance from an off-line switching power supply evaluated In accordance with MIL-STD-461A, CEO3 F-30 SYMBOL MILLIMETERS INCHES NOTES (3 Terminal TO-3) min. | max. | MIN. | MAX, oD A 6.35 | 11.43 .250 450 A | $b 97 1.09 038 043 | 3 leads > OT @0 22,23 875 . { : | e 10.67 | 11.18 420 440 c i SEATING ej 5.21 5.72 .205 225 oo 7 AL | F 3.43 135 L F 7 | : | PLANE L 7.92 312 3 leads i ob op 3.84 4.09 151 161 e , s| q 29,90 | 30.40 | 41.177] 1.197 1 &% 4 ot-|~2 ry 13.34 525 at /s e r 4.78 188 @ \ 2 2 f \ \ | s 16.64 | 17.15 .700 .730 e f ; Ul Te) Sy 10,03 | 10.29 395 405 . \o.| -@ F en | 368] 419 | 145] 165 SOUT oe r3 6.30 6.40 .248 .252 ta . SI re a 81> , PIN DESCRIPTION: q 1 BASE . 2 EMITTER . oN 3 COLLECTOR oa aN ye SEMICONDUCTOR INDUSTRIES, INC. 2001 West Tenth Place, Tempe, Arizona 85281 602-968-3102 adie Mailing Address: P.O. Peis) Copyright General Semiconductor Industries, Inc. 10-78 Printed in USA