BAS16WS-V
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Rev. 1.7, 02-Aug-12 1Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• Also available in case SOT-23 with designation
BAS16
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
BAS16WS-V BAS16WS-V-GS18 or BAS16WS-V-GS08 A6 Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR75 V
Repetitive peak reverse voltage VRRM 100 V
Forward current (continuous) IF250 mA
Non-repetitive peak forward current
t = 1 μs IFSM 2A
t = 1 ms IFSM 1A
t = 1 s IFSM 0.5 A
Power dissipation Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air RthJA 650 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
BAS16WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.7, 02-Aug-12 2Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 1 mA VF715 mV
IF = 10 mA VF855 mV
IF = 50 mA VF1000 mV
IF = 150 mA VF1250 mV
Leakage current
VR = 25 V, TJ = 150 °C IR30 μA
VR = 75 V IR1μA
VR = 75 V, TJ = 150 °C IR50 μA
Diode capacitance VR = 0, f = 1 MHz CD2pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 trr 6ns
18105
I
F
(mA)
V
F
(V)
T
j
= 100 °C
T
j
= 25 °C
10- 2
10- 1
102
103
1
10
120
17438
f = 1 kHz
T
j
= 25 °C
I
F
(mA)
R
f
(Ω)
10
102
103
104
10-2 10-1 110
2
10
2
5
2
5
2
5
2
5
18185
P
tot
(mW)
T
amb
(°C)
0
100
400
500
200
300
100 2000
17440
V
R
(V)
0.7
0.8
0.9
1.0
1.1 f = 1 MHz
T
j
= 25 °C
2086410
C
D
(V
R
)
C
D
(0 V)
BAS16WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.7, 02-Aug-12 3Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
17441 Tj (°C)
IR (nA)
10
102
103
104
100 200
2
5
2
5
2
5
2
5
V
R
= 20 V
1
0
Foot print recommendation:
Rev. 5 - Date: 23.Sept.2009
17443
Document no.:S8-V-3910.02-001 (4)
0.6 (0.024)
0.6 (0.024)0.6 (0.024)
1.6 (0.063)
0.10 (0.004)
Cathode bar
0.20 (0.008)
0.40 (0.016)
2.50 (0.098)
1.1 (0.043)
1.5 (0.059)
2.85 (0.112)
1.60 (0.063)
1.95 (0.077)
0.15 (0.006)
0.1 (0.004) max.
1.15 (0.045)
0.8 (0.031)
Created - Date: 24.August.2004
0.40 (0.016)
0.25 (0.010)
0.2 (0.008)
0° to 8°
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Revision: 02-Oct-12 1Document Number: 91000
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