UNISONIC TECHNOLOGIES CO., LTD
2SA733 PNP SILICON TRANSISTOR
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Copyright © 2012 Unisonic Technologies Co., Ltd QW-R206-068,E
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA733 is a low frequency amplifier.
FEATURES
* Collector-emitter voltage:
BVCBO=-50V
* Collector current up to -150mA
* High hFE linearity
* Complimentary to 2SC945
TO-92
1
SOT-323
1
2
3
SOT-23
1
2
3
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Normal Lead Free Halogen Free 1 2 3
2SA733-x-AE3-R 2SA733L-x-AE3-R 2SA733G-x-AE3-R SOT-23 E B C Tape Reel
2SA733-x-AL3-R 2SA733L-x-AL3-R 2SA733G-x-AL3-R SOT-323 E B C Tape Reel
2SA733-x-T92-B 2SA733L-x-T92-B 2SA733G-x-T92-B TO-92 E C B Tape Box
2SA733-x-T92-K 2SA733L-x-T92-K 2SA733G-x-T92-K TO-92 E C B Bulk
MARKING (For SOT Package)
2SA733 PNP SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Dissipation SOT-23 PC 300 mW SOT-323 200
TO-92 625
Collector Current IC -150 mA
Junction Temperature TJ 125 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note:1. Absolute maximum ratings are thos e values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratin gs only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless other wise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=-100μA, IE=0 -60 V
Collector-Emitter Breakdown Voltage BVCEO I
C=-10mA, IB=0 -50 V
Collector-Emitter Saturation Voltage VCE
(
SAT
)
IC=-100mA, IB=-10mA -0.1 -0.3 V
Collector Cut-Off Current ICBO V
CB=-40V, IE=0 -100 nA
Emitter Cut-Off Current IEBO V
EB=-3V, IC=0 -100 nA
DC Current Gain hFE V
CE=-6V, IC=-1mA 90 600
Current Gain Bandwidth Product fT V
CE=-10V, IC=-50mA 100 190 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 2.0 3.0 pF
Noise Figure NF IC=-0.1mA, VCE=-6V
RG=10kΩ, f=100Hz 4.0 6.0 dB
CLASSIFICATION OF hFE
RANK R Q P K
RANGE 90-180 135-270 200-400 300-600
2SA733 PNP SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Collector Current, IC(mA)
DC Current Gain, hFE
Collector Current, IC(mA)
Saturation Voltage (MV)
2SA733 PNP SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
