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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1920AB35
35 Watts, 25 Volts, Class AB
Personal 1930 - 1990 MHz
GENERAL DESCRIPTION
The 1920AB35 is a COMMON EMITTER transistor capable of providing 35
Watts of Class AB, RF output power over the band 1930-1990 MHz. This
transist or is specificall y designed for PERSONAL COM MUNICATIONS
BASE STATION amplifier applications. It includes Input prematching and
utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide
high reliability and supreme ruggedness. .
CASE OUTLINE
55AR, STYLE 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 120 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 60 Volts
LVceo Collector to Emitter Voltage 27 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 14.0 Amps
Maximum Temp eratures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F =1990 MHz
Vce = 25 Volts
Icq = 250 mAmps
As Above
35
8.0 8.5
43
6.0
3:1
Watt
Watt
dB
%
BVces
LVceo
BVebo
Ices
hFE
Cob
θjc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ic = 50 mA
Ie = 10 mA
Vce = 27 Vo lts
Vce = 5 V, Ic = 0.7 A
F =1 MHz, Vcb = 28 V
Tc = 25 C
o
60
27
3.5
20 36
10
100
1.6
Volts
Volts
Volts
mA
pF
C/W
o
Issue January 1996
Typical Performance 1920AB35
August 1996
