MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC30 mA
Power Dissipation (One Die) PD300 mW
Power Dissipation (Both Die) PD500 mW
Power Dissipation (One Die, TC=25°C) PD750 mW
Power Dissipation (Both Die, TC=25°C) PD1500 mW
Operating and Storage
Junction Temperature TJ,Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=45V 2.0 nA
ICEO VCE=5.0V 2.0 nA
IEBO VEB=5.0V 2.0 nA
BVCBO IC=10µA 60 V
BVCEO IC=10mA 60 V
BVEBO IE=10µA 6.0 V
VCE(SAT) IC=1.0mA, IB=0.1mA 0.35 V
VBE(ON) VCE=5.0V, IC=100µA 0.70 V
hFE VCE=5.0V, IC=10µA 150 600
hFE VCE=5.0V, IC=10µA, TA= -55°C 40
hFE VCE=5.0V, IC=100µA 225
hFE VCE=5.0V, IC=1.0mA 300
fTVCE=5.0V, IC=500µA, f=20MHz 60 MHz
2N2920
NPN SILICON
DUAL TRANSISTORS
JEDEC TO-78 CASE
Central
Semiconductor Corp.
TM
R0 (22-February 2007)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
2N2920 is a silicon NPN dual transistor utilizing
two individual chips mounted in a hermetically
sealed metal case designed for differential
amplifier applications.
Central
Semiconductor Corp.
TM
JEDEC TO-78 CASE - MECHANICAL OUTLINE
2N2920
NPN SILICON
DUAL TRANSISTORS
R0 (22-February 2007)
ELECTRICAL CHARACTERISTICS PER TRANSISTOR (continued): (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
Cob VCB=5.0V, IE=0, f=140kHz 6.0 pF
NF VCE=5.0V, IC=10µA, RS=10kΩ3.0 dB
f=1.0kHz, BW=200Hz
MATCHING CHARACTERISTICS:
SYMBOL TEST CONDITIONS MIN MAX UNITS
hFE1/hFE2*V
CE=5.0V, IC=100µA 0.9 1.0
|VBE1-VBE2|V
CE=5.0V, IC=10µA 5.0 mV
|VBE1-VBE2|V
CE=5.0V, IC=100µA 3.0 mV
|VBE1-VBE2|V
CE=5.0V, IC=1.0mA 5.0 mV
∆(VBE1-VBE2)V
CE=5.0V, IC=100µA, TA= -55°C to +25°C 0.8 mV
∆(VBE1-VBE2)V
CE=5.0V, IC=100µA, TA= +25°C to +125°C 1.0 mV
* The lowest hFE reading is taken as hFE1
