Darlington Power Transistors
NPN Silicon
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Dimensions : Millimetres
Features:
•Continuous Collector Current - lc= 20 A
•Switching Regulators
•Inverters
•Solenoid and Relay Drivers
•Motor Controls
The Darlington transistors are designed for high-voltage, high-
speed, power switching in inductive circuits where fall time is
critical. They are particularly suited for line operated switch-mode
applications such as:
Pin 1. Base
2. Emitter
Collector (Case)
TO-3
Dimensions Minimum Maximum
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.2 26.67
F 0.92 1.09
G 1.38 1.62
H 29.9 30.4
I 16.64 17.3
J 3.88 4.36
K 10.67 11.18
Maximum Ratings
Characteristic Symbol MJ10005 Unit
Collector - Emitter Voltage
VCEV 500
V
VCEX (SUS) 450
VCEO (SUS) 400
Emitter - Base Voltage VEBO 8
Collector Current - Continuous
- Peak
IC
ICM
20
30 A
Base Current IB2.5
Total Power Dissipation at TC= 25°C
at TC= 100°C
Derate above 25°C
PD
175
100
1
W
W
W / °C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +200 °C
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1°C / W
Darlington Power Transistors
NPN Silicon
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Figure - 1 Power Derating
PD, Power Dissipation
(W)
TC, Temperature (°C)
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector - Emitter Sustaining Voltage
(IC= 250 mA, IB= 0, VClamp = Rate VCEO) MJ10005 VCEO (sus) 400 - V
Collector Cut off Current
(VCE = Rated VCEV, RBE = 50 Ω, TC= 100°C) ICER - 5
mA
Collector Cut off Current
(VCEV = Rated Value, VBE (OFF) = 1.5 V)
(VCEV = Rated Value, VBE (OFF) = 1.5 V, TC= 100°C)
ICEV -0.25
5
Emitter Cut off Current
(VEB = 2 V, IC= 0) IEBO - 175
ON Characteristics (1)
DC Current Gain
(IC= 5 A, VCE = 5 V)
(IC= 10 A, VCE = 5 V)
hFE 50
40
600
400
-
Collector - Emitter Saturation Voltage
(IC= 10 A, IB= 400 mA)
(IC= 20 A, IB= 2 A)
(IC= 10 A, IB= 400 mA, TC = 100°C)
VCE (sat) -1.9
3
2
V
Base - Emitter Saturation Voltage
(IC= 10 A, IB= 400 mA)
(IC= 10 A, IB = 400 mA, TC = 100°C)
VBE (sat) - 2.5
2.5
Diode Forward Voltage
(IF= 10 A) VF5
Dynamic Characteristics
Small - Signal Current Gain (2)
(IC= 1 A, VCE = 10 V, f = 1 MHz) | hfe |10 - -
Output Capacitance
(VCB = 10 V, IE= 0 V, f = 100 kHz) Cob 100 - pF
Switching Characteristics
Delay Time
VCC = 250 V, lC= 10 A
IB1 = 400 mA, VBE (o(f) = 5 V
tp = 50 µs, Duty Cycle ≤ 2%
td- 0.2
µs
Rise Time tr- 0.6
Storage Time ts- 1.5
Fall Time tf- 0.5
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2%
(2) fT= |hfe| ° ftest
Darlington Power Transistors
NPN Silicon
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DC Current Gain Collector Saturation Region
IB, Base Current (A)
VCE, Collector Emitter Voltage (V)
IC, Collector Current (A)
hFE, DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Voltage
IC, Collector Current (A)
V, Voltage (V)
IC, Collector Current (A)
V, Voltage (V)
Collector Cut -off Region Output Capacitances
VR, Reverse Voltage (V)
Cob, Output Capacitance (pF)
VBE, Base Emitter Voltage (V)
V, Voltage (V)
Darlington Power Transistors
NPN Silicon
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Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
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all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
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Part Number Table
Description Part Number
Darlington Transistor, TO-3 MJ10005
Turn - on Time Turn - off Time
IC, Collector Current (A)
t, Time (µs)
IC, Collector Current (A)
t, Time (µs)
Active Region Safe Operating Area Reverse Bias Switching Safe Operating Area
VCE, Collector Emitter Voltage (V)
IC, Collector Current (A)
VCE, Collector Emitter Voltage (V)
IC, Collector Current (A)
