LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon BCW68GLT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO - 45 Vdc Collector-Base Voltage V CBO - 60 Vdc Emitter-Base Voltage V EBO - 5.0 Vdc - 800 mAdc Collector Current -- Continuous IC CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C RJA TJ , Tstg DEVICE MARKING BCW68GLT1 = DH ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0 ) V (BR)CEO - 45 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = -10 Adc, VEB = 0 ) V (BR)CES - 60 -- -- Vdc Emitter-Base Breakdown Voltage (I E= -10 Adc, I C = 0) V - 5.0 -- -- Vdc (VCE = -45 Vdc, I E= 0 ) -- -- - 20 nAdc (VCE = -45 Vdc, I B= 0 , TA = 150C) -- -- - 10 Adc -- -- - 20 nAdc OFF CHARACTERISTICS Collector Cutoff Current Emitter Cutoff Current (VEB = - 4.0 Vdc, I C = 0) (BR)EBO I CES I EBO 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M12-1/2 LESHAN RADIO COMPANY, LTD. BCW68GLT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 120 160 60 -- -- -- 400 -- -- V CE(sat) -- -- - 1.5 Vdc V -- -- - 2.0 Vdc 100 -- -- MHz -- -- 18 pF -- -- 105 pF -- -- 10 dB ON CHARACTERISTICS DC Current Gain ( IC= -10 mAdc, VCE = -1.0 Vdc ) ( IC= -100 mAdc, VCE = -1.0 Vdc ) ( IC= -300 mAdc, VCE = -1.0 Vdc ) Collector-Emitter Saturation Voltage ( IC = - 300 mAdc, IB = -30 mAdc ) Base-Emitter Saturation Voltage ( IC = - 500 mAdc, IB = -50 mAdc ) hFE BE(sat) -- SMSMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product fT (I C = -20mAdc, V CE = -10 Vdc, f = 100 MHz) Output Capacitance C obo (V CB = - 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance C ibo (V EB = -0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure NF (V CE = - 5.0 Vdc, I C = - 0.2 mAdc, R S = 1.0 k, f = 1.0 kHz, BW = 200 Hz) M12-2/2