PAGE . 1November 01,2010-REV.02
2N7002
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
60V N-Channel Enhancement Mode MOSFET
• Marking : S72
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER Symbol Limit Units
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
+20 V
Continuous D rain Current I
D
250 mA
Pulsed Drain Current
1)
I
DM
1300 mA
Maximum Power Dissipation T
A
=25
O
C
T
A
=75
O
CP
D
350
210 mW
Operating Junction and Storage Temperature Range T
J
,T
STG
-55 to + 150
O
C
Junction-to Ambient Thermal Resistance(PCB mounted)
2
R
θJA
357
O
C/W
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)MAX.
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.006(0.15)MIN.
0.103(2.60)
0.086(2.20)
0.008(0.20)
0.003(0.08)
• Apporx. Weight : 0.0003 ounces, 0.0084grams
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=5Ω
• RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω
•
•
•
•
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PAGE . 2November 01,2010-REV.02
ELECTRICAL CHARACTERISTICS
VDD
VOUT
VIN
RG
RL
Switching
Test Circuit
Gate Charge
Test Circuit
VDD
VGS
RG
RL
1mA
Parameter Symbol Test Condition Min. Typ. Max. Units
Static
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=10μA60--V
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
, I
D
=250μA1-2.5V
Drain-Source On-State Resistance R
DS(on)
V
GS
=4.5V, I
D
=75mA - - 7 . 5
Ω
Drain-Source On-State Resistance R
DS(on)
V
GS
=10V, I
D
=500mA - - 5
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V, V
GS
=0V - - 1 μA
Gate Body Leakage I
GSS
V
GS
=+20V, V
DS
=0V - - +100 nA
Forward Transconductance g
fS
V
DS
=15V, I
D
=250mA 200 - - mS
Dynamic
Total Gate Charge Q
g
V
DS
=15V, I
D
=500mA
V
DD
=4.5V
-0.60.7
nCGate-Source Charge Q
gs
-0.1-
Gate-Drain Charge Q
gd
-0.08-
Turn-On Ti me t
on
V
DD
=10V , R
L
=20Ω
I
D
=500mA , V
GEN
=10V
R
G
=10Ω
-915
ns
Turn-Off Ti me t
off
-2126
Input Capacitance C
iss
V
DS
=25V, V
GS
=0V
f=1.0MH
Z
--50
pFOutput Capacitance C
oss
--25
Reverse Transfer Capacitance C
rss
--5
Source-Drain Diode
Max. Diode Forward Current I
s
- - - 250 mA
Diode Forward Voltage V
SD
I
S
=250mA , V
GS
=0V - 0.93 1.2 V
2N7002
PAGE . 3November 01,2010-REV.02
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
012345
VDS -Drain-to-Source Voltage (V)
ID-Drain-to-Source Current (A)
5.0V
4.0V
3.0V
VGS
= 6.0~10V
0
0.2
0.4
0.6
0.8
1
1.2
0123456
VGS -Gate-to-Source Voltage (V)
ID-Drain Source Current (A)
VDS =10V
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2
ID-Drain Current (A)
RDS(ON)-On-Resistance
()W
VGS =4.5V
V
GS
=10V
0
2
4
6
8
10
2345678910
VGS - Gate-to-Source Voltage (V)
RDS(ON) - On-Resistance
I
D
=500mA
oC
T =125
J
oC
T=25
J
()W
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature ( oC)
R
DS(ON)
- On-Resistance(Normalized)
VGS =10V
ID=500mA
oC
T=25
J
2N7002
PAGE . 4November 01,2010-REV.02
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
QgdQgs Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
Qg- Gate Charge (nC)
V
GS
- Gat e-to-Source Volt age (V)
VDS=
15V
ID=500mA
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature ( oC)
V
th
- G-S Threshold Voltage (NORMALIZED)
ID=250 Am
64
65
66
67
68
69
70
71
72
73
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature ( oC)
BVDSS - Breakdown Voltage (V)
I=250A
D
m
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
T
J
=125
o
C
VGS =0V
T =-55
J
o
C
Fig.11 - Capacitance vs Drain to Source Voltage
VDS- Drain-to-Source Voltage (V)
C - Capacitance (pF)
o
C
T=25
J
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25
Ciss
f=1MHz
V
GS
=0V
Crss
Coss
2N7002
PAGE . 5
November 01,2010-REV.02
MOUNTING PAD LAYOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its produ cts for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
SOT-23
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.078
(2.00)
0.035 MIN.
(0.90) MIN.
0.043
(1.10)
0.106
(2.70)
Unit inch(mm)：
2N7002