Rugged Power MOSFETs IRF430R, IRF431R, IRF432R, IRF433R Avalanche Energy Rated N-Channel Power MOSFETs 4.0A and 4,.5A, 450V-500V fos(on) = 1.5Q and 2.02 Features: @ Single pulse avalanche energy rated SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF430R, IRF431R, IRF432R and IRF433R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AA steel package. Absolute Maximum Ratings File Number 1996 N-CHANNEL ENHANCEMENT MODE dD 9208-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION ORAIN SOURCE (FLANGE) oF; 6 (CO GATE 92Cs- 37801 JEDEC TO - 204AA P t IRF430R IRF431R IRF432R IRF433R Units Vos Drain - Source Voltage 500 450 500 450 Vv Voea Drain - Gate Voltage (Ras = 20 KO) M 500 450 500 450 Vv lo @ Tc = 25C Continuous Drain Current 4.5 45 4.0 40 A lo @ Tc = 100C Continuous Drain Current 3.0 3.0 2.5 2.5 A lone Pulsed Drain Current @ 18 18. - 16 _16 A Vos Gate - Source Voltage +20 Vv Po @ Te = 25C Max. Power Dissipation 75 (See Fig. 14) Ww Linear Derating Factor 0.6 (See Fig. 14) : w/C Eas Single Pulse Avalanche Energy Rating @ 300 mj Toe Stormo cmporature Range 755 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-62Rugged Power MOSFETs IRF430R, IRF431R, IRF432R, IRF433R Electrical Characteristics @ T; = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF430R = IRF432R | 500 _ - v Vas = OV IRF431R = IRF433R | 45 _ - v Ip = 250pA Vasu Gate Threshold Voltage ALL 2.0 = 4.0 v Vos = Vas, Ip = 2504 A loss Gate-Source Leakage Forward ALL = = 100 nA__| Vas = 20V lass Gate-Source Leakage Reverse ALL _ = -100 nA Vas = -20V loss Zero Gate Voltage Drain Current = 250 HA Vos = Max. Rating, Vas = 0V ALL [7 [= [1000 | wa | Vos = Max. Rating x 0.8, Ves = OV. Te = 125C loom On-State Drain Current @ IRF430R | 4g _. _ A IRFAS1R Vos > lotion X Reston max, Vas = 10V IRF432R | 4g _ _ A IRF433R " Rosion Static Drain-Source On-State IRF430R | _ 13 15 2 Resistance @ IRF431R : = = Vas = 10V, fo = 2.5A IRF432R 18 20 2 IRF433R | | Die Forward Transconductance @ ALL 2.5 3.2 - SW) [Vos > lon X Rosionmen, Ip = 2.5A Crs Input Capacitance ALL = 600 = pF = = = Vas = OV, Vos = 25V, f = 1.0 MHz Cos Output Capacitance Ack | [too [7 TF | coor; 5.10 Cre Reverse Transfer Capacitance ALL = 30 = pF : | _tarom Turn-On Delay Time ALL _ = 30 ns Voo = 225V, lo = 2.5A, Zo = 15 te Rise Time ALL = = 30 ns See Fig. 17 tatomn Turn-Off Delay Time ALL _ 55 ns (MOSFET switching times are essentially t Fall Time ALL _ ~ 30 ns independent of operating temperatyre.) Q, Total Gate Charge ALL _ 4 39 nc Vas = 10V, lp = 6.0A, Vos = 0.8V Max. Rating. (Gate-Source Pius Gate-Drain) e See Fig. 18 for test circuit. (Gate charge is Q, Gate-Source Charge ALL 11 nc essentially independent of operating pa temperature.) Qoe Gate-Drain ("Miller") Charge AtL _ 11 = ac Lo Internal Drain inductance ALL _ 5.0 _ nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to | internal device > source and gate pins inductances and center of die. vo Ls Internal Source Inductance ALL - 12.5 - nH Measured from the source pin, 6mm & ts (0.25 in.) from header and source s bonding pad. fae atees Thermal Resistance AmJC Junction-to-Case ALL = - 1.67 _ | C/W RCS Case-to-Sink ALL _ 0.1 _ C/W _| Mounting surface flat, smooth, and greased. RJA Junction-to-Ambient ALL = _ 30 C/W _| Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF430R | __ _ 45 A Modified MOSFET symbol (Body Diode} IRF431R showing the integral . IRF432R 40 } reverse P-N junction rectifier. IRF433R | = 5 N Ism Pulse Source Current IRFA30R) 18 A 6 (Body Diode) IRF431R IRF432R scg-anese wRF439R| ~ | ~ | 1 | A Veo Diode Forward Voltage @ IRF430R| _ = = = IRF431R 1.4 Vv Te = 28C, is = 4.5A, Vas = OV IRF432R = 950 = = IRF433R | _ 1.3 Vv Te = 25C, Is = 4.0A, Vas = OV by Reverse Recovery Time ALL _ 800 _ ns Ty = 150C, Ip = 4.5A, die/dt = 100A/ys Qra Reverse Recovered Charge ALL _ 4.6 _ ue Ts = 180C, Ir = 4.5A, dle/dt = 100A/ys ton Forward Turn-on Time ALL Intrinsic turn-on time is negtigibte. Turn-on speed is substantially controlled by Ls + Lo. @ Ts = 25C to 150C. @ Pulse Test: Pulse width < 300s, Duty Cycle = 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Voo = 50V, starting T, = 25C, L = 25MH, Ros = 2522, Ipeax = 4.5A. See figures 15, 16. 6-63Rugged Power MOSFETs IRF430R, IRF431A, IRF432R, IRF433R Yos > loton) * g = 3 2 i : = 3 & = = 2 Ty 125C z 5 Ty 259 < z a -59 & i Ty= 85C 3 o s q 100 200 wo Q 1 2 3 6 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vas. GATE TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 18 LIMITED a = = 3 j s s = & & 2 z s 5 2 cre s 10, Ty = 150C MAX =f ar 1 e 2 6 8 0 10 2 5 10 2 50 100-200 Vos, OAAIN-TO-SOUACE VOLTAGE (VOLTS) Vpg. ORAIN-TO- SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area we co 9 2 we a 1, DUTY FACTOR, O= z . e eS gs THERMAL IMPEDANCE) 0.02 3. Tym Te" Pom Zinc. Zrngcltl/Ayye. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 0.01 os? $4 2 5 3 2 5 w2 2 5 il 2 5 19 2 14, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-64 300 2. PER UNIT BASE Arye 1.67 DEG. C/W.Rugged Power MOSFETs pis. TRANSCONDUCTANCE {SIEMENS} Vos > 'oon} * aston) max. PULSE a 1 2 3 4 5 Ip, DRAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current 4.25 ts 0.98 0.85 BVogs. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NQAMALIZEO) 075 -40 0 a0 80 120 160 Ty, JUNCTION TEMPERATURE (9C) Fig. 8 Breakdown Voltage Vs. Temperature 2000 Vgs70 f-1 mu? I 1600 Cigg * Co + Cog. Cqs SHORTED Cres * Cog Cy Cgs Cou = Can Eros + 1200 800 C, CAPACITANCE pF} 400 0 10 20 nN 40 50 Vps. ORAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Rasion). ORAIN-TO-SQURCE ON RESISTANCE (NORMALIZED} IRF430R, (RF431R, IRF432R, IRF433R Ty = 150C lpr, REVERSE DRAIN CURRENT (AMPERES) Ty= 0 1 2 3 4 Vp. SOURCE-TO-ORAIN VOLTAGE (VOLTS} Fig. 7 Typical Source-Drain Diode Forward Voltage a 06 40 a 40 80 420 Ty, JUNCTION TEMPERATURE (9C) Fig. 9 Normalized On-Resistance Vs. Temperature Vgs. GATE TO-SOURCE VOLTAGE (VOLTS) Ip =6A FOR TEST CIRCUIT SEE FIGURE 18 0 a 16 24 32 40 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-65Rugged Power MOSFETs IRF430R, IRF431R, IRF432R, IRF433R 5 Rosion WITH PULSE OF 2.0 us DURATION. INITIAL T, = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) o - Aps(on). DRAIN-TO SOURCE ON RESISTANCE (OHMS) w 10 15 Jp. DRAIN CURRENT {AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current 20 a5 ip, ORAIN CURRENT (AMPERES) Qo 25 50 76 100 Tc, CASE TEMPERATURE (C) 125 150 Fig. 13 Maximum Drain Current Vs. Case Termperature 20 _ f+ -- N ~ 4 a [ l \ EF g N 2 59 z 3 \ 2 al ; 50 a E + | o *. 9 | \ q 10 i 4 \ | 0 20 40 0 80 100 120 140 Tc, CASE TEMPERATURE (9C) Fig. 14 Power Vs. Temperature Derating Curve VARY tp TO OBTAIN REQUIRED PEAK I, Veg tt0 [Fr] Fig. 15 Unclamped Energy Test Circuit Von = 225V TS Fig. 17 Switching Time Test Circuit 6-66 92C$-42659 Yo TO SCOPE 92CS- 42660 Fig. 16 Unclamped Energy Waveforms Vos CURRENT SSOLATED. REGULATOR SUPPLY) SAME TYPE ev > AS OUT 1 BATTERY a ouT | 15 mA Om __- ANA Vos 6 1 0 CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit