DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-800-1C ABDB-800-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) ACTUAL SIZE DT DB804 SERIES DB800-DB810 and ADB804-ADB808 BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE BH AC SURGE OVERLOAD RATING TO 300 AMPS PEAK AC UL RECOGNIZED - FILE #E124962 LL _ MECHANICAL DATA + LD Case: Molded plastic, U/L Flammability Rating 94V-0 D1 Terminals: Round silver plated copper pins + Soldering: Per MIL-STD 202 Method 208 guaranteed D1 BL Polarity: Marked on side of case; positive lead at beleveled corner _ Mounting Position: Any. Through hole provided for #6 screw Weight: 0.18 Ounces (5.4 Grams) BL MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%. RATINGS PARAMETER (TEST CONDITIONS) SYMBOL Series Number Maximum DC Blocking Voltage VRM Working Peak Reverse Voltage VRWM Maximum Peak Recurrent Reverse Voltage VRRM RMS Reverse Voltage VR (RMS) Power Dissipation in V(BR) Region for 100 S Square Wave Continuous Power Dissipation in V(BR) Region @ THS=80o C (Heat Sink Temp) Thermal Energy (Rating for Fusing) Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). TJ = 150O C @ TC = 50o C (Note 1) Average Forward Rectified Current @TA = 50o C (Note 2) Junction Operating and Storage Temperature Range CONTROLLED AVALANCHE ADB ADB ADB DB 804 806 808 800 DB DB DB 801 802 804 DB 806 DB DB 808 810 400 600 800 50 100 200 400 600 800 1000 280 420 560 35 70 140 280 420 560 PRM 400 n/a PR 2 n/a I2t 64 IFSM 300 IO 10 8 TJ, TSTG -55 to +150 AMPS C V(BR) Min See Note 4 n/a V(BR) Max See Note 4 n/a Maximum Reverse Current at Rated VRM Minimum Insulation Breakdown Voltage (Circuit to Case) Typical Thermal Resistance Junction to Ambient (Note 2) Junction to Case (Note 1) 700 AMPS2 SEC Maximum Avalanche Voltage @ TA = 25o C @TA = 100o C VOLTS WATTS Minimum Avalanche Voltage Maximum Forward Voltage (Per Diode) at 4 Amps DC UNITS NON-CONTROLLED AVALANCHE VOLTS VFM 0.95 (Typ. 0.90) IRM 2 50 A VISO 2000 VOLTS RJA RJC 12 5 NOTES: (1) Bridge mounted on 4.9" x 4.3" x 0.11" thick (12.4cm x 10.8cm x 0.3cm) aluminum plate (2) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and bridge lead length of 0.375" (9.5mm) (3) Bolt bridge on heat sink, using silicon thermal compound between bridge and mounting surface, for maximum heat transfer (4) These bridges exhibit the avalanche characteristic at breakdown. If your application requires a specific breakdown voltage range, please contact us. o C/W 3.01 08db E31 DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-800-2C ABDB-800-2C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 8 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES DB800 - DB810 and SERIES ADB804 - ADB808 300 60Hz Resistive or Inductive Loads 250 NOTE 1 200 Case 150 Ambient NOTE 2 100 50 1 10 100 Number of Cycles at 60 Hz Temperature, oC FIGURE 1. FORWARD CURRENT DERATING CURVE 100 FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 50 10 10 TJ = 100o C 1.0 1.0 NOTE 3 0.1 0.1 TJ = 25o C 0.01 0.01 0 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS 400 NOTE 4 NOTES (1) Case Temperature, TC, With Bridge Mounted on 4.9" x 4.3" x 0.11" Thick (12.4cm x 10.8cm x 0.3cm) Aluminum Plate 100 Ambient Temperature, TA, With Bridge Mounted on PC Board With 0.5" Sq. (12mm Sq.) Copper Pads And Bridge Lead Length of 0.375" (9.5mm) (2) TJ = 150o C 10 1 10 100 Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE (3) TJ = 25o C; Pulse Width = 300Sec; 1% Duty Cycle (4) TJ = 25o C; f = 1 MHz; Vsig = 50mVp-p 3.01 08db E32