2N3866A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose high frequency * VHF-UHF amplifier transistor * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3866AJ) * JANTX level (2N3866AJX) * JANTXV level (2N3866AJV) * JANS level (2N3866AJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features * Radiation testing (total dose) upon request * * * * Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 1008 Reference document: MIL-PRF-19500/398 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 30 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 3.5 Volts IC 400 mA 1 5.71 2.9 16.6 Collector Current, Continuous Thermal Resistance RJC 60 W mW/C W mW/C C/W Operating Junction Temperature Storage Temperature TJ TSTG -65 to +200 C Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 25C Copyright 2002 Rev. F PT PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3866A Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Base Breakdown Voltage V(BR)CBO IC = 100 A 60 Units Volts Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5 mA 30 Volts Emitter-Base Breakdown Voltage V(BR)EBO IE = 100 A 3.5 Volts Collector-Emitter Cutoff Current ICEO ICES1 ICES2 Collector-Emitter Cutoff Current Test Conditions Min Typ VCE = 28 Volts VCE = 55 Volts VCE = 55 Volts, TA = 150C On Characteristics Max 20 100 2 A A mA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 DC Current Gain Collector-Emitter Saturation Voltage VCEsat1 Test Conditions IC = 50 mA, VCE = 5 Volts IC = 360 mA, VCE = 5 Volts IC = 50 mA, VCE = 5 Volts TA = -55C IC = 100 mA, IB = 10 mA Min 25 8 12 Test Conditions VCE = 15 Volts, IC = 50 mA, f = 200 MHz VCB = 28 Volts, IE = 0 mA, Min Typ Max 200 Units 1 Volts Max Units Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Collector Efficiency Power Output Copyright 2002 Rev. F Symbol |hFE| COBO 1 2 P1out P1out VCC = 28 Volts, f = 400 MHz Pin = 0.15 W Pin = 0.075 W VCC = 28 Volts, f = 400 MHz Pin = 0.15 W Pin = 0.075 W Typ 4 7.5 3.5 45 40 1.0 0.5 pF % 2 Watts Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2