VSD
RF_OUT
VDD
RF_IN
BIAS
C
C2
C
C1 Amplifier2
AMP1
Surface Mount
2.0 x 2.0 x 1.1 mm3
O
AY
WW
Note:
Package marking
provides Orientation
and identification
“A” = Product Code
“Y” = Year
“WW” = Work Week
GND
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
Pin 6
Bottom View
LNA I/O’s :
1. NC
2. RF_IN
3. NC
BOTTOM PADDLE : GND
4. VSD
5. RF_OUT
6. VDD
Pin Con guration
ALM-1106
GPS Low Noise ampli er with Variable bias current
and Shutdown function
Data Sheet
Description
Avago Technologies’s ALM-1106 is a LNA designed for
GPS/ISM/Wimax applications in the (0.9-3.5)GHz fre-
quency range. The LNA uses Avago Technologies’s
proprietary GaAs Enhancement-mode pHEMT process
to achieve high gain operation with very low noise g-
ures and high linearity. Noise gure distribution is very
tightly controlled. Gain and supply current are guaran-
teed parameters. A CMOS compatible shutdown pin is
included to turn the LNA o and provide a variable bias.
The ALM-1106 LNA is useable down to 1V operation.
It achieves low noise gures and high gain even at 1V,
making it suitable for use in critical low power GPS/ISM
band applications.
Simpli ed Schmatic
Features
Advanced GaAs E-pHEMT
Low Noise: 0.8 dB typ
High Gain : 14.3 dB typ
Low component count
High IIP3 and IP1dB
Wide Supply Voltage: 1V to 3.6V
Shutdown current : < 0.1uA
CMOS compatible shutdown pin (VSD) current @
2.85V : 90uA
Adjustable bias current via one single external resis-
tor/voltage
Small Footprint: 2x2mm2
Low Pro le: 1.1mm typ
Ext matching for non-GPS freq band operation
Speci cations (25 deg): At 1.575GHz, 2.85V 8mA (Typ)
Gain = 14.3 dB (Typ)
NF = 0.8 dB (Typ)
IIP3 = 4.7 dBm (Typ)
IP1dB = 1.8 dBm (Typ)
S11 = -11.8 dB (Typ)
S22 = -12.4 dB (Typ)
Typical performance @ 1.0V supply
S21 = 12.3dB
NF = 1.0dB
Ids = 3.6mA
Note:
Measurements obtained using demoboard described in Figure 4.
2
Absolute Maximum Ratings [1]
Symbol Parameter Units Absolute Maximum
VDS Drain - Source Voltage[2] V 3.6
IDS Drain Current[2] mA 15
Pdiss Total Power Dissipation [3] mW 54
Pin max. RF Input Power dBm +10
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
qch_b Thermal Resistance [4] °C/W 232
Notes:
1. Operation of this device above any
one of these parameters may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C. Derate 4.32mW/°C for TB > 137 °C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
3
Electrical Speci cations
TA = 25 °C, DC bias for RF parameter is VDD = VSD = +2.85V @ 8mA (unless otherwise speci ed)
Table 1. Performance table at nominal operating conditions
VDD= VSD = +2.85V, R1 = 18K Ohm, Freq=1.575GHz – Typical Performance
Symbol Parameter and Test Condition Units Min. Typ Max.
G Gain dB 12.7 14.3 15.8
NF Noise Figure dB - 0.8 1.3
IP1dB Input 1dB Compressed Power dBm 1.8
IIP3 Input 3rd Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
dBm 4.7
S11 Input Return Loss dB -11.8
S22 Output Return Loss dB - 12.4
Ids Supply Current mA 8 13
Ish Shutdown Current @ VSD = 0V uA 0.1
Vds Supply Voltage V 2.85
IP1dB1710M Out of Band IP1dB (DCS 1710MHz) blocking dBm 2.9
IIP3OUT Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 5.5
Table 2 – Typical performance at low operation voltages with R1 (see Fig 5) set to 0 Ohm
VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz – Typical Performance (VSD=VDD, R1=0 Ohm)
Symbol Parameter and Test Condition Units VDD=2V VDD=1.5V VDD=1.0V
G Gain dB 15 14.2 12.3
NF Noise Figure dB 0.8 0.9 1
IP1dB Input 1dB Compressed Power dBm -1.4 -2.4 -3.8
IIP3 Input 3rd Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
dBm 7.3 4.9 5.2
S11 Input Return Loss dB -13.8 -11.5 -8
S22 Output Return Loss dB -15.5 -14.5 -11.7
Ids Supply Current mA 13 7.5 3.6
Ish Shutdown Current @ VSD = 0V uA 0.1 0.1 0.1
Vds Supply Voltage V 2 1.5 1.0
IP1dB1710M Out of Band IP1dB (DCS 1710MHz) blocking dBm -0.3 -1.9 -2.9
IIP3OUT Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 8.7 5.8 3
4
GPS LNA
RF IN RF OUT
MAR 2005 TL.
Avago
Technologies
H 0.010
W 0.0220
e 3.48
GND
GND
VDD
SD
0.1μF
12Ω / / 33nH
100pF
6.8pF
10nH
5.6nH
4.7nH
6.8pF
18k
Figure 1. Demoboard and Application Circuit Components
Figure 2. Demoboard schematic
+VDD
RF_OUT
VSD
RF_IN
Johanson 0402
Johanson 0402
Johanson 0402
Toko LL1005
BIAS
L
L3
R=
L=4.7 nH
C
C5
C=6.8 pF
L
L2
L=10 nH
L
L1
L=5.6 nH
R
R1
R=18 kOhm
C
C4
C=6.8 pF
C
C2
C
C3
C=0.1 uF PRL
PRL1
L=33 nH
R=12 Ohm
C
C1
Amplifier2
AMP1
Notes
L1 and L2 form the input matching net-
work. The LNA module has a integrated
coupling and DC-blocking capacitors
at the input and output. Best noise
performance is obtained using high-Q
wirewound inductors. This circuit demon-
strates that low noise gures are obtain-
able with standard 0402 chip inductors.
Replacing L1, L2 and L3 with high-Q
wirewound inductors (eg. Cilcraft 0402CS
series) will yield 0.1dB lower NF and 0.6dB
higher Gain.
L3 is an output matching inductor.
C5 is a RF bypass capacitor.
PRL1 is a network that isolates the mea-
surement demoboard from external
disturbances. C3 and C4 mitigates the
e ect of external noise pickup on the VSD
and VDD lines. These components are not
required in actual operation.
Bias control is achieved by either varying
the VSD voltage without R1 or xing the
VSD voltage to VDD and varying R1. Typi-
cal value for R1 is 18k Ohm for 8mA total
current at VDD=+2.85V.
Higher gain and IP3 performance can be
obtained by increasing the supply cur-
rent. This can be achieved by reducing the
value for R1 to obtain desired current.
For low voltage operation such as 1.5V or
1.0V, the R1 may be omitted and VSD con-
nected directly to the supply pins.
5
9
10
11
12
13
14
15
16
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
Gain (dB)
1.575GHz
2GHz
2.4GHz
0.7
0.75
0.8
0.85
0.9
0.95
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
NF (dB)
1.575GHz
2GHz
2.4GHz
0
2
4
6
8
10
12
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
IIP3 (dBm)
1.575GHz
2GHz
2.4GHz
0
1
2
3
4
5
6
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
IP1dB (dBm)
1.575GHz
2GHz
2.4GHz
0
2
4
6
8
10
12
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
Ids (mA)
1.575GHz
2GHz
2.4GHz
ALM-1106 Typical Performance Curves, R1 = 18K Ohm (At 25°C unless speci ed otherwise)
Figure 3. Gain vs Vdd vs Freq
Figure 7. Ids vs Vdd vs Freq
Figure 6. IP1dB vs Vdd vs Freq
Figure 5. IIP3 vs Vdd vs Freq
Figure 4. NF vs Vdd vs Freq
6
ALM-1106 Typical Performance Curves, R1 = 18K Ohm (At 25°C unless speci ed otherwise)
Figure 8. Gain vs Vdd vs Temp Figure 9. NF vs Vdd vs Temp
Figure 10. IIP3 vs Vdd vs Temp Figure 11. IP1dB vs Vdd vs Temp
Figure 12. Ids vs Vdd vs Temp
11
12
13
14
15
16
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
Gain (dB)
25 deg
-40 deg
85 deg
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
NF (dB)
25 deg
-40 deg
85 deg
0
1
2
3
4
5
6
7
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
IIP3 (dBm)
25 deg
-40 deg
85 deg
0
0.5
1
1.5
2
2.5
3
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
IP1dB (dBm)
25 deg
-40 deg
85 deg
4
5
6
7
8
9
10
11
12
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
Ids (mA)
25 deg
-40 deg
85 deg
7
ALM-1106 Typical Scattering Parameters at 25°C, VDD = 2.85V, IDS = 8 mA
Freq. S11 S21 S12 S22
(GHz) Mag. Ang. (dB) Mag. Ang. (dB) Mag. Ang. Mag. Ang.
0.1 0.998 -4.7 15.01 5.633 176.7 -47.96 0.004 89.2 0.526 -5
0.5 0.946 -23.5 14.62 5.381 153.1 -34.42 0.019 78.6 0.503 -19
0.9 0.866 -40.4 13.72 4.854 134.1 -29.90 0.032 71.8 0.475 -31.9
1 0.843 -44.4 13.47 4.714 129.7 -29.37 0.034 70.5 0.468 -34.9
1.1 0.821 -48.2 13.20 4.573 125.5 -28.64 0.037 69.3 0.459 -37.9
1.2 0.8 -52 12.95 4.44 121.5 -27.96 0.04 68.5 0.451 -40.5
1.3 0.78 -55.8 12.69 4.31 117.6 -27.33 0.043 67.4 0.443 -43.2
1.4 0.757 -59.7 12.42 4.178 113.6 -26.94 0.045 66.5 0.435 -45.8
1.5 0.731 -63.4 12.13 4.039 109.7 -26.38 0.048 65.7 0.428 -48.2
1.6 0.705 -66.8 11.83 3.905 106.1 -26.02 0.05 64.8 0.421 -50.7
1.7 0.683 -69.7 11.55 3.78 102.9 -25.51 0.053 64.7 0.414 -52.8
1.8 0.663 -71.6 11.29 3.669 99.5 -25.19 0.055 63.9 0.408 -55.5
1.9 0.643 -73.4 10.99 3.544 96 -24.73 0.058 63.1 0.399 -58
2 0.623 -75.3 10.48 3.343 97 -24.58 0.059 66.3 0.398 -58.8
2.1 0.603 -77.2 10.25 3.253 93.5 -24.15 0.062 65.5 0.398 -59.6
2.2 0.583 -79 10.01 3.165 90.2 -23.74 0.065 64.6 0.397 -60.3
2.3 0.563 -80.9 9.77 3.079 87 -23.48 0.067 63.8 0.396 -61.1
2.4 0.543 -82.8 9.49 2.983 83.8 -23.10 0.07 63 0.396 -62.1
2.5 0.522 -85.3 9.23 2.895 81.1 -22.73 0.073 62.3 0.395 -62.7
3 0.434 -105.2 7.95 2.498 66.6 -21.21 0.087 56.9 0.345 -74.4
3.5 0.334 -119.5 6.47 2.105 57.3 -20.26 0.097 54 0.324 -86.8
4 0.302 -132.1 6.25 2.054 48.8 -18.42 0.12 53.7 0.271 -108
4.5 0.297 -141.8 5.50 1.883 33.1 -16.95 0.142 43.4 0.265 -113.3
5 0.274 -157.1 4.44 1.667 23.9 -15.97 0.159 38 0.259 -118.6
5.5 0.254 -170.1 3.63 1.519 16.1 -15.04 0.177 33.7 0.26 -133.2
6 0.211 178.7 2.82 1.383 6.3 -14.11 0.197 25.3 0.249 -142.7
6.5 0.204 165.4 1.89 1.243 -0.7 -13.64 0.208 16.7 0.263 -154.7
7 0.189 137.1 1.56 1.197 -5.4 -13.27 0.217 12.7 0.306 -171.3
7.5 0.193 117.3 1.03 1.126 -14.4 -12.88 0.227 9.5 0.31 179.8
8 0.206 90.6 0.87 1.105 -22.2 -12.40 0.24 4.7 0.314 170.8
8
ALM-1106 Typical Noise Parameters, VDD = 2.85V, IDS = 8mA
Freq (GHz) Fmin (dB) Gopt Mag. Gopt Ang. Rn/50 NF @ 50dB
0.5 0.53 0.64 13.8 0.41 1.46
0.9 0.65 0.69 32.2 0.28 1.07
1.5 0.8 0.71 47.4 0.24 1.22
1.7 0.82 0.69 58.1 0.22 1.14
2 0.91 0.68 59.5 0.23 1.1
2.4 0.93 0.64 71.3 0.27 1.72
3 1.21 0.52 99.2 0.16 1.45
3.5 1.33 0.44 135.8 0.12 1.6
4 1.69 0.35 161.3 0.08 1.27
4.5 1.73 0.31 171.3 0.06 1.47
5 1.82 0.32 -179.6 0.06 1.65
5.5 1.98 0.34 -171.2 0.08 2.16
5.8 2.37 0.43 -174.8 0.14 2.88
9
2.00 ± 0.10
2.00 ± 0.10
1.10 ± 0.10
TOPVIEW SIDEVIEW
PIN 1
O
AY
WW
(4X) 0.65
0.40 R 0.15
(6X) 0.36
1.66
(6X) 0.10
(6X) 0.43
(3X) 0.94
BOTTOM VIEW
6
4
PIN 1
3
Package Dimensions
Device Orientation
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
Tape Dimensions
Notes:
1. Measured from centerline of sprocket hole to centerline of pocket
2. Cumulative tolerance of 10 sprocket holes is ± 0.20
All dimensions in millimeters unless otherwise stated.
Existing Thermal Ground to pad clearance = 0.16mm
Samsung Thermal Ground to pad min clearance = 0.25mm
10
Reel Dimensions
FRONT VIEW
BACKFRONT
SEE DETAIL "x"
RECYCLE LOGO
∅178.0 ± 1.0
BACK VIEW
EMBOSSED RIBS
RAISED: 0.25mm, WIDTH: 1.25mm
∅51.2 ± 0.3
Slot hole 'o'
14.4*
MAX
FRONT BACK
∅178.0± 1.0
∅55.0 ± 0.5
60˚
Slot hole 'b'
R5.2
R10.65
65˚ 45˚
7.9 - 10.9**
8.4 +1.5*
- 0.0
Part Number Ordering Information
Part Number No. of Devices Container
ALM-1106-TR1G 3000 7” Reel
ALM-1106-TR2G 10000 13” Reel
ALM-1106-BLKG 100 antistatic bag
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes AV01-0028EN
AV02-1469EN - March 2, 2012
