Advance Product Information
March 29, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
6.5 Watt Ku Band Power Amplifier TGA2514- EPU-FL
Primary Applications
• Ku band VSAT Transmitter
• Point t o Point Radio
Key Features
• Frequency Range : 13 - 16 GHz
• 38 dBm Nominal Psat
• 24 dB No minal Gain
• 14 dB No minal Return Loss
• 0.25-um pHEMT 3MI Technology
• 10 lead flange package
• Bias Conditions: 8 V @ 2.6 A Idq
• Package dimension: 0.45 x 0.68 x 0.12 in.
Measured Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
30
31
32
33
34
35
36
37
38
39
40
13 14 15 16 17 18 19 20
Freque ncy (GHz )
Psat (dBm)
Product Description
The TGA2514-EPU-FL provides 24 dB of
gain and 6.5W of output power across
13-16 GHz. The TGA2514-EPU-FL is
designed using TriQuint’s proven
standard 0.25-µm gate pHEMT
production process.
This device is ideally suited for VSAT
Transmitter and Point to Point Radio
applications. The flange lead package
has a high thermal conductivity copper
alloy base.
Evaluation Boards are available.
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
9 11131517192123
Frequency (GHz)
Gain (dB)
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
Return Loss (dB)
Gain
Input
Output
TGA2514-FL
DATE CODE
LOT CODE
Advance Product Information
March 29, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS
Symbol Parameter 1/ Value Notes
V+Positive Su pply Voltage 9 V 2/
V-Negative Supply Voltage Range -5V TO 0V
I+Positive Supply Current 4 A 2/
| IG | Gat e Supply Current 113 mA
PIN Input Continuo us Wa ve Power 30.3 dBm 2/
PDPower Dissipa tion 20.8 W 2/ , 3/
TCH Operat ing Cha nne l Temp era t ure 150 0C4/
TMMounting Tem perature (30 S econds) 210 0C
TSTG Stor age Temperature -65 t o 150 0C
1/ These rating s represent t he maximum oper able values for t his device.
2/ Combinations of supply voltage, supply current, input power, a nd outp ut power shall not exceed
PD.
3/ Wh en operat ed at t his bias condition with a base pl at e tem perature of 70 0C, the
median life is 1E+6 hours.
4/ Junction operating temperat ure will dir ectly affect the device median t ime t o failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possibl e levels.
TGA2514-EPU-FL
Advance Product Information
March 29, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE II
RF CH ARACTERIZATION TABLE
(TA = 25°C, Nominal)
(Vd = 8V, Id = 2.6 A)
SYMBOL PARAMETER TEST
CONDITION TYPICAL UNITS
Gain Small Signal Gain f = 13-16 GHz 24 dB
IRL Input Retu rn Loss f = 13-16 GHz 14 dB
ORL Output Return Loss f = 13-16 GHz 14 dB
Psat Satur at ed Power f = 13-16 GHz 38 dBm
TGA2514-EPU-FL
TABLE III
THERMAL INFORM ATIO N
Paramete r Test Conditions TCH
(oC) RθJC
(°C/W) TM
(HRS)
RθJC Thermal
Resistance
(channel to backside of
package)
Vd = 8 V
ID = 2.6 A (Quiescent)
Pdiss = 20.8 W 150 3.9 1 E+6
Note: Package backside SnPb soldered to carrier at 70°C bas epla te t em pe rat u re. At
saturated output power, the DC power consumption is 28.8 W with 6.5 W RF power
delivered to the load. Power dissipated is 22.3 W and the temperature rise in the
channel is 87 °C. T he baseplate t emper ature must be reduced to 63°C to rem ain
below the 150 °C maximum channel temperature.
Advance Product Information
March 29, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
Measured Fixture Data
30
31
32
33
34
35
36
37
38
39
40
13 14 15 16 17 18 19 20
Frequency (GHz)
Psat (dBm)
TGA2514-EPU-FL
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
9 11131517192123
Frequency (GHz)
Gain (dB)
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
Return Loss (dB)
Gain
Input
Output
Advance Product Information
March 29, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
Measured Fixture Data
30
32
34
36
38
40
9 10111213141516171819202122
Pin (dBm)
Pout (dBm )
13.5GHz
14GHz
14.5GHz
15GHz
1.5
2
2.5
3
3.5
4
4.5
9 10111213141516171819202122
Pin (dB m )
Id (A)
13.5GHz
14GHz
14.5GHz
15GHz
15
17
19
21
23
25
9 10111213141516171819202122
Pin (dBm )
Power Gain (dB)
13.5GHz
14GHz
14.5GHz
15GHz
TGA2514-EPU-FL
Advance Product Information
March 29, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
GaAs MMIC devices are susceptible to damage from Elec trostatic Disc harge. Proper precautions should
be observed during handling, assembly and test.
Notes:
1. Vd must remain below 9V to comply with maximum rating value.
2. The drain supply must be connected to both sides of the evaluation block.
3. The cooling fan must be powered at all times when the device is under bias.
4. Connect fan supply red/black to +12V. It requires ~100mA.
TGA2514-EPU-FL
Evaluation Board Drawing
Advance Product Information
March 29, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly Diagram
Note: Vg can be biased from either Pin 1 or Pin 5
2,4,7,9
Gnd
Vg
RF In
TGA2514-FL
310
8
1
RF Out
Vd
0.01 µF1 µF
1 µF0.01µF
6
Vd
0.01 µF
10 Ω
10 Ω
5
Vg
TGA2514-EPU-FL
GaAs MMIC devices are susceptible to damage from Elec trostatic Disc harge. Proper precautions should
be observed during handling, assembly and test.
1 µF
0.01 µF
1 µF
Advance Product Information
March 29, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
GaAs MMIC devices are susceptible to damage from Elec trostatic Disc harge. Proper precautions should
be observed during handling, assembly and test.
Mechanical Drawing TG A2514-EPU-FL
TGA2514-EPU-FL
Note: All dimensions are in inches with ±0.005 tolerance
Advance Product Information
March 29, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly of a TGA2514-EPU-FL Surface Mount Package onto a Motherboard
1. Clean the motherboard or module with acetone. Rinse with alcohol and DI water. Allow the circuit
to fully dry.
2. To improve the thermal and RF performance, we recommend a heat sink attached to the bottom of the package
and apply SnPb or equivalent solder to the bottom of TGA2514.
3. Apply SnPb or equivalent solder to each pin of TGA2514 and to the backside of the package.
4 Clean the assembly with alcohol.
.
Ordering Information
Part Package Style
TGA2514-EPU-FL Flange (Leads bolted down)
GaAs MMIC devices are susceptible to damage from Elec trostatic Disc harge. Proper precautions should
be observed during handling, assembly and test.
TGA2514-EPU-FL
