Ly SGS-THOMSON MICROELECTRONICS 2N 3650 ---> 2N 3658 FAST SWITCHING SCR FEATURES a HIGH di/dt AND dV/dt RATINGS uw tq: < 10us AND 15s FOLLOWING Vpraw/Varo A > KK a HIGH STABILITY AND RELIABILITY 6 K G DESCRIPTION The 2N 3650 ---> 2N 3658 Silicon Controlled Recti- fier Family uses a high performance glass passi- A vated technologies. This fast switching Silicon Controlled Rectifier To 48 Family is designed for high frequency power (Metal) switching applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) | RMS on-state current Tc=65C 35 A (180 conduction angle) ITiAV) Average on-state current Te=65C 22.5 A (180 conduction angle,single phase circuit) ITSM Non repetitive surge peak on-state current tp=8.3 ms 210 A (Tj initial = 25C ) tp=10 ms 200 l2t @t value tp=10 ms 200 A2s di/at Critical rate of rise of on-state current 400 Alus Gate supply :Iq@=1A_ dig/dt = 10 Ajus Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 230 07 from case Symbol Parameter 2N Unit 3650 3655 | 3651 3656 | 3653 3658 VORM Repetitive peak off-state voltage 100 200 400 Vv VRRM Tj = 125C July 1991 146 Me 7929237 OO5948b 698 1592N 3650 ---> 2N 3658 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (c-h) {Contact (case to heatsink) 0.4 C/W Rth (j-c) DC | Junction to case for DC 1.0 C/W GATE CHARACTERISTICS (maximum values) PG (AV) = 1W Pam = 40W (tp= 20s) IF@M= 4A (tp=20us) VFam=16V(tp=20us) VRGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V (DC) R_=33Q Tj=25C MAX 180 mA VGT Vp=12V. (DC) Rp=33Q Tj=25C | MAX 15 VaD Vp=VbDRM RL=3.3kQ Tj= 120C | MIN 0.2 tgt Vp=VpRM_ |G = 500mA Tj=25C TYP 1 ys dig/dt = 3A/us IL Ig= 1.2 IT Tj=25C TYP 140 mA lH IT= 500mA gate open Tj=25C TYP 70 mA VIM ITM= 254 tp= 380us Tj=25C MAX 2.05 v IDRM VpRM_ Rated Tj=25C MAX 0.05 mA ! Vv Rated RAM RRM Tj= 120C 6 dVidt Linear slope up to Vp=67%VDRM Tj= 120C | MIN 200 Vius gate open Tq Vp=67%VDRM 2N 3650 /2N3651 | Tj= 120C | MAX 15 us ltM= 25A 2N 3653 VR= 15V ditw/dt=5 A/us 2N 3655 / 2N 3656 10 dVp/dt=200V/us 2N 3658 2/6 160 me 7929237 0059487? S242N 3650 ---> 2N 3658 SINUSOIDAL CURRENT PULSE DATA Fig.1 : Energy per pulse for sinusoidal pulses. 404 PARAMETER : It (A) 5 600 & 400 2 9 300 uw 40 200 i 150 8 400 a 50 a 30 = 10 > fe r Ww ai 1 410 102 4 Fig.2 : Maximum allowable peak on-state current versus pulse width for Tc = 85 C. 104 PARAMETER : = F (Hz) = ' - 100 - = 400 4000 Itw 5 2500 & 5000 @ 10? th WwW - = z o pn << WwW a 10 402 Fig.3 : Maximum allowable peak on-state current versus pulse width for Tc = 90 C. 108 PARAMETER : = F (Hz) = = 100 " oo MOTER E 2500 4. Vp = Vq = 200 Volts. e 5000 2. A.C Snubber, = 0.4 pF. A=390. a 102 3 wu - < i n i a 4 << la a 10 4 1 PULSE WIDTH, ty (ps) 3/6 Me 7929237 0059488 460 1612N 3650 ---> 2N 3658 TRAPEZOIDAL CURRENT PULSE DATA Fig.4 : Energy per pulse for trapezoidal pulses. 408 PARAMETER : T ty lA) 600 400 300 200 150 4100 50 30 % ENERGY PER PULSE, Ey (nd) PULSE WIDTH, tp (ps) Fig.5 : Maximum allowable peak on-state current versus pulse width for Tc = 85 C. 108 PARAMETER : 2 F (Hz) = 400 + 400 di/dt = A/us 1000 / 100 A/ p E 2500 Wd & ze 108 FE d4/dt It ? & pa 'y ra? 2 10 PULSE WIDTH, tp (ps) Fig.6 : Maximum allowable peak on-state current versus pulse width for Tc = 90 C. 109 PARAMETER : z F (Hz) = 100 a 400 NOTES : e 1000 1. Vp = Vp = 200 Volts. f 2. A.C Snubber, C = 0.4 pF. a 102 A= 330. pte} e * 5 = # 10 PULSE WIDTH, ty (us) 4/6 Me 7929237 0059489 3T7 162Fig.7 : Non repetitive surge peak on-state current versus number of cycles. Itsm (A) 250 eat Tj initial = 25C 200 150 cI Hy 100 AT 50 _ HT Number of cycles | 0 [jt titel | 1 10 100 1000 Fig.9 : Relative variation of gate trigger current and holding current versus junction temperature. IgtTl - nits] gtlTj=25C. In[T)225 C] 2.5 2 Igt 15 AWN 1 BS Ih SECC | pop 0.5 t i te Ty (C) 1 1 1 L Qo =40-30-20-10 0 10 20 30 40 50 60 70 80 90 100110120130 Fig11 : On-state characteristics (maximum values). tang (A) 1000 Ty initial 25C 100 Tj max _ Ty max Vto = 1.4V 10 Rt =0.0195 0 VImMV) 1 2 3 4 5 6 we 7929237 00594590 019 = 2N 3650 ---> 2N 3658 Fig.8 : Transient thermal impedance junction to ambient. Zth yoo (C/W) 1.0E+00 10E-01 t (s) 10E+00 +0E+01 1.0E-02 10E-04 106-03 10E-02 10E-01 Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10 ms, and corresponding value of It. Irs (A) Pt (A's) 1000 Ty initia! = 25C 'tsm 100 5/6 1632N 3650 ---> 2N 3658 PACKAGE MECHANICAL DATA (in millimeters) TO 48 Metal @ 2202 4202 | . 1 ~ J] 2125 9 a o / | maxi H | = a 2 #H# | _ a 8 g i 5 | | mae ] 3| t N 9/16" aver flats 6 sided 4] 3 t x & | - NN | M6 174" - 2B UNF 16,5 maxi Cooling method : A Marking : type number Weight : 13.5 g Polarity : Anode (or A2) to case Stud torque : 3.5 mAN min / 3.8 mAN max 6/6 Me 7929237 GOS549L TSS 164