2SC3279
NPN Silicon
Epitaxial Transistors
Features
• High DC Current Gain and excellent hFE Linearity
hFE(1) =140-600 (VCE
=1.0V, IC=0.5A)
h
FE(2)
=70 (Min.), 200 (Typ.) (V
CE
=1.0V, I
C
=2.0A)
Maximum Ratings
Symbol Rating Rating Unit
VCEO
Collector-Emitter Voltage 10 V
VCES Collector-Emitter Voltage 30 V
VCBO
Collector-Base Voltage 30 V
VEBO
Emitter-Base Voltage 6.0 V
IC Collector Current - DC
Pulsed (1) 2.0
5.0 A
IB Base Current 0.2 A
PC Collector power dissipation 750 mW
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Voltage
(IC=10mAdc, IB=0) 10 --- --- Vdc
V(BR)EBO Collector-Emitter Voltage
(IE=1.0mAdc, IC=0) 6.0 --- --- Vdc
ICBO Collector Cutoff Current
(VCB=30Vdc,IE=0) --- --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=6.0Vdc, IC=0) --- --- 0.1 uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain (2)
(IC=0.5Adc, VCE=1.0Vdc) 140 --- 600 ---
hFE(2)
DC Current Gain
(IC=2.0Adc, VCE=1.0Vdc) 70 200 --- ---
VCE(sat) Collector Saturation Voltage
(IC=2.0Adc, IB=50mAdc) --- 0.2 0.5 Vdc
VBE Base Saturation Voltage
(IC=2.0Adc, VCE=1.0Vdc) --- 0.86 1.5 Vdc
fT Transition Frequency
(VCE=1.0Vdc, IC=0.5Adc) 100 150 --- MHz
Cob Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz) --- 27 --- pF
(1) Pulse Width=10 ms (Max.), Duty Cycle=30% (Max.)
(2) h
FE(1)
Classification L: 140-240, M: 200-330, N: 300-450, P: 420-600
Pin Configuration
Bottom View E C BTO-92
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
A
E
B
C
D
G
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Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth
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MCC
MCC
2SC3279
www.mccsemi.com
Revision: 2 2003/04/30
