FCBS0650 - Fairchild Semiconductor

FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

September 8, 2005

FCBS0650

Smart Power Module (SPM)

Features

• UL Certified No.E209204(SPM27-BA package)

• 500V-6A 3-phase MOSFET inverter bridge including control

ICs for gate driving and protection

• Divided negative dc-link terminals for inverter current sensing

applications

• Single-grounded power supply due to built-in HVIC

• Isolation rating of 2500Vrms/min.

• Very low leakage current due to using ceramic substrate

Applications

• AC 200V three-phase inverter drive for small po wer a c moto r

drives

• Home appliances applications like refrigerator.

General Description

It is an advanced smart power module (SPM) that Fairchild has

newly developed and designed to provide very compact and

high performance ac motor drives mainly targeting low-power

inverter-driven application like refrigerator. It combines opti-

mized circuit protection and drive matched to low-loss MOS-

FETs. System reliability is further enhanced by the integrated

under-voltage lock-out and short-circuit protection. The high

speed built-in HVIC provides opto-coupler-less single-supply

MOSFET gate driving capability that further reduce the overall

size of the inverter system design. Each phase current of

inverter can be monitored separately due to the divided nega-

tive dc terminals.

Bottom ViewTop View

26.8mm

44mm

Bottom ViewTop View

26.8mm

44mm

Figure 1.

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Integrated Power Functions

• 500V-6A MOSFET inverter for three-phase DC/AC power conversion (Please refer to Fig. 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side MOSFETs: Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection

Note) Available bootstrap circuit example is given in Figs. 10 and 11.

• For inverter low-side MOSFETs: Gate drive circuit, Short circuit pr otection (SC)

Control supply circuit under-voltage (UV) protection

• Fault signaling: Corresponding to a UV fault (Low-side supply), SC fault

• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input

Pin Configuration

Figure 2.

Top View

(1) V CC(L)

(2) COM

(3) IN(UL)

(4) IN(VL)

(5) IN(WL)

(6) V FO

(21) NU

(22) NV

(23) NW

(27) P

(15) VB(V)

(16) VS(V)

(17) IN(WH)

(18) VCC(WH)

(19) V B(W)

(20) VS(W)

(24) U

(25) V

(26) W

Case Tem perature (T

Detectin g Po i nt

Cer am ic S ubst rate

(7) CFOD

(8) CSC

(9) IN(UH)

(10) VCC(UH)

(11) VB(U)

(12) VS(U)

(13) IN (VH)

(14) VCC(VH)

(1) V CC(L)

(2) COM

(3) IN(UL)

(4) IN(VL)

(5) IN(WL)

(6) V FO

(21) NU

(22) NV

(23) NW

(27) P

(15) VB(V)

(16) VS(V)

(17) IN(WH)

(18) VCC(WH)

(19) V B(W)

(20) VS(W)

(26) W

Case Tem perature (T

Detectin g Po i nt

Cer am ic S ubst rate

(7) CFOD

(8) CSC

(9) IN (UH)

(10) VCC(UH)

(11) VB(U)

(12) VS(U)

(13) IN (VH)

(14) VCC(VH)

13.3

19.1

(1) V CC(L)

(2) COM

(3) IN(UL)

(4) IN(VL)

(5) IN(WL)

(6) V FO

(21) NU

(22) NV

(23) NW

(27) P

(15) VB(V)

(16) VS(V)

(17) IN(WH)

(18) VCC(WH)

(19) V B(W)

(20) VS(W)

(24) U

(25) V

(26) W

Case Tem perature (T

Detectin g Po i nt

Cer am ic S ubst rate

(7) CFOD

(8) CSC

(9) IN (UH)

(10) VCC(UH)

(11) VB(U)

(12) VS(U)

(13) IN (VH)

(14) VCC(VH)

(1) V CC(L)

(2) COM

(3) IN(UL)

(4) IN(VL)

(5) IN(WL)

(6) V FO

(21) NU

(22) NV

(23) NW

(27) P

(15) VB(V)

(16) VS(V)

(17) IN(WH)

(18) VCC(WH)

(19) V B(W)

(20) VS(W)

(26) W

Case Tem perature (T

Detectin g Po i nt

Cer am ic S ubst rate

(7) CFOD

(8) CSC

(9) IN (UH)

(10) VCC(UH)

(11) VB(U)

(12) VS(U)

(13) IN (VH)

(14) VCC(VH)

13.3

19.1

13.3

19.1

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Pin Descriptions

Pin Number Pin Name Pin Description

CC(L) Low-side Common Bias Voltage for IC and MOSFETs Driving

2 COM Common Supply Ground

3IN

(UL) Signal Input for Low-side U Phase

4IN

(VL) Signal Input for Low-side V Phase

5IN

(WL) Signal Input for Low-side W Phase

FO Fault Output

FOD Capacitor for Fault Output Duration Time Selection

SC Capacitor (Low-pass Filter) for Short-Current Detection Input

9IN

(UH) Signal Input for High-side U Phase

10 VCC(UH) High-side Bias Voltage for U Phase IC

11 VB(U) High-side Bias Voltage for U Phase MOSFET Driving

12 VS(U) High-side Bias Voltage Ground for U Phase MOSFET Driving

13 IN(VH) Signal Input for High-side V Phase

14 VCC(VH) High-side Bias Voltage for V Phase IC

15 VB(V) High-side Bias Voltage for V Phase MOSFET Driving

16 VS(V) High-side Bias Voltage Ground for V Phase MOSFET Driving

17 IN(WH) Signal Input for High-side W Phase

18 VCC(WH) High-side Bias Voltage for W Phase IC

19 VB(W) High-side Bias Voltage for W Phase MOSFET Driving

20 VS(W) High-side Bias Voltage Ground for W Phase MOSFET Driving

21 NUNegative DC–Link Input for U Phase

22 NVNegative DC–Link Input for V Phase

23 NWNegative DC–Link Input for W Phase

24 U Output for U Phase

25 V Output for V Phase

26 W Output for W Phase

27 P Positive DC–Link Input

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Internal Equivalent Circuit and Input/Output Pins

Note:

1. Inverter low-side is composed of three MOSFETs, and one control IC. It has gate driving and protection functions.

2. Inverter power side is composed of four inverter dc-link input terminals and t hree inverter output terminals.

3. Inverter high-side is c omposed of three MOSFETs and three drive ICs for each MOSFET.

Figure 3.

COM

VCC

IN(UL)

IN(VL)

IN(WL)

VFO

C(FOD)

C(SC)

OUT(UL)

OUT(VL)

OUT(WL)

NU (21)

NV (22)

NW (23)

U (24)

V (25)

W (26)

P (27)

(20) VS(W)

(19) VB(W)

(16) VS(V)

(15) VB(V)

(8) CSC

(7) CFOD

(6) VFO

(5) IN(WL)

(4) IN(VL)

(3) IN(UL)

(2) COM

(1) VCC(L)

VCC

OUT

COM VS

OUT

COM

VCC

OUT

COM VS

(18) VCC(WH)

(17) IN(WH)

(14) VCC(VH)

(13) IN(VH)

(12) VS(U)

(11) VB(U)

(10) VCC(UH)

(9) IN(UH)

VSL

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Note:

1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM, the average

junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C)

Control Part

Total System

Thermal Resistance

Note:

2. For the measurement point of case temperature(TC), please refer to Figure 2.

Package Marking and Ordering Information

Symbol Parameter Conditions Rating Units

VPN Supply Voltage Applied between P- NU, NV, NW400 V

VPN(Surge) Supply Voltage (Surge) Applied between P- NU, NV, NW450 V

VDSS Drain-Source Voltage 500 V

± IDEach MOSFET Drain Current TC = 25°C, Peak Sinusoidal Current 6 A

± IDP Each MOSFET Drain Current (Peak) TC = 25°C, Under 1ms Pulse Width 8 A

PCCollector Dissipation TC = 25°C per One Chip 26.3 W

TJOperating Junction Temperature (Note 1) -20 ~ 125 °C

Symbol Parameter Conditions Rating Units

VCC Control Supply Voltage Applied between VCC(UH), VCC(VH), VCC(WH), VCC(L) -

COM 20 V

VBS High-side Control Bias Volt-

age Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) -

VS(W)

20 V

VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL),

IN(WL) - COM -0.3~17 V

VFO Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V

IFO Fault Output Current Sink Current at VFO Pin 5 mA

VSC Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V

Symbol Parameter Conditions Rating Units

TSC Short sircuit withstanding time VCC = VBS = 13.5 ~ 16.5V, TJ = 125°C,Non-

repetitive,VPN=400V, RShunt=0mΩ10 µs

TCModule Case Operation Temperature -20°C ≤ TJ ≤ 125°C, See Figure 2 -20 ~ 100 °C

TSTG Storage Temperature -40 ~ 125 °C

VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection

Pins to ceramic substrate 2500 Vrms

Symbol Parameter Conditions Min. Typ. Max. Units

Rth(j-c) Junction to Case Thermal

Resistance Inverter MOSFET part (per 1/6 module) - - 3.8 °C/W

Device Marking Device Package Re el Size Tape Width Quantity

FCBS0650 FCBS0650 SPM27BA - - 10

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Note:

3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.

For the detailed information, please s ee Figure 4.

Figure 4. Switching Time Definition

Symbol Parameter Conditions Min. Typ. Max. Units

RDS(ON) Static Drain-Source On

Resistance VCC = VBS = 15V

VIN = 5V ID =3A, TJ = 25°C - 1.15 1.55 Ω

VSD Drain-Source Diode For-

ward Voltage VCC = VBS = 15V

VIN = 0V ID =3A, TJ = 25°C - - 1.25 V

HS tON Switching Times VPN = 300V, VCC = VBS = 15V

ID = 3A

VIN = 0V ↔ 5V, Inductive Load

(Note 3)

-0.52- µs

tC(ON) -0.19- µs

tOFF -0.77- µs

tC(OFF) -0.08- µs

trr -0.13- µs

LS tON VPN = 300V, VCC = VBS = 15V

ID = 3A

VIN = 0V ↔ 5V, Inductive Load

(Note 3)

-0.68- µs

tC(ON) -0.25- µs

tOFF -0.80- µs

tC(OFF) -0.07- µs

trr -0.15- µs

IDSS Drain - Source

Leakage Current VDS = VDSS - - 250 µA

tON tC(ON)

trr

Irr

10% of ID

100% of ID

90% of ID

100% of ID

10% of VDS

(a) T u rn-on

tOFF

tC(OFF)

(b) Turn-off

VDS

VIN VIN

10% of VDS

10% of ID

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Control Part

Note:

4. Short-circuit current protection is functioning only at the low-sides.

5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]

Recommended Operating Conditions

Symbol Parameter Conditions Min. Typ. Max. Units

IQCCL Quiescent VCC Supply

Current VCC = 15V

IN(UL, VL, WL) = 0V VCC(L) - COM - - 23 mA

IQCCH VCC = 15V

IN(UH, VH, WH) = 0V VCC(UH), VCC(VH),

VCC(WH) - COM - - 100 µA

IQBS Quiescent VBS Supply

Current VBS = 15V

IN(UH, VH, WH) = 0V VB(U) - VS(U), VB(V) -VS(V),

VB(W) - VS(W)

- - 500 µA

VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V

VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V

VSC(ref) Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V

UVCCD Supply Circuit Under-

Voltage Protection Detection Level 10.7 11.9 13.0 V

UVCCR Reset Level 11.2 12.4 13.2 V

UVBSD Detection Level 10.1 11.3 12.5 V

UVBSR Reset Level 10.5 11.7 12.9 V

tFOD Fault-out Pulse Width CFOD = 33nF (Note 5) 1.0 1.8 - ms

VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL),

IN(VL), IN(WL) - COM 2.9 - - V

VIN(OFF) OFF Threshold Voltage - - 0.8 V

Symbol Parameter Conditions Value Units

Min. Typ. Max.

VPN Supply Voltage Applied between P - NU, NV, NW- 300 400 V

VCC Control Supply Voltage Applied between VCC(UH), VCC(VH), VCC(WH),

VCC(L) - COM 13.5 15 16.5 V

VBS High-side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),

VB(W) - VS(W)

13.0 15 18.5 V

dVCC/dt,

dVBS/dt Control supply variation -1 - 1 V/µs

tdead Blanking Time for Preventing

Arm-short For Each Input Signal 2 - - µs

fPWM PWM Input Signal -20°C ≤ TC ≤ 100°C, -20°C ≤ TJ ≤ 125°C - - 20 kHz

VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM

(Including surge voltage) -4 4 V

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Mechanical Characteristics and Ratings

Figure 5. Flatness Measurement Position

Parameter Conditions Limits Units

Min. Typ. Max.

Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 0.72 N•m

Device Flatness Note Fig. 5 0 - +120 µm

Weight - 15.4 - g

( + )

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Time Charts of SPMs Protective Function

a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.

a2 : Normal operation: MOSFET ON and carrying current.

a3 : Under voltage detection (UVCCD).

a4 : MOSFET OFF in spite of control input condition.

a5 : Fault output operation starts.

a6 : Under voltage reset (UVCCR).

a7 : Normal operation: MOSFET ON and carrying current.

Figure 6. Under-Voltage Protection (Low-side)

b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.

b2 : Normal operation: MOSFET ON and carrying current.

b3 : Under voltage detection (UVBSD).

b4 : MOSFET OFF in spite of control input condition, but there is no fault output signal.

b5 : Under voltage reset (UVBSR)

b6 : Normal operation: MOSFET ON and carrying current

Figure 7. Under-Voltage Protection (High-side)

Low-Side

Input Signal

Low-Side Output Current

Fault Output Signal

Low-Side Control

Supply Voltage

RESET

UVCCR

Protection

Circuit State SET RESET

UVCCD

a1 a3

a2 a4

High-Side Input Signal

High-Side Output Current

Fault Output Signal

High-Side Control

Supply Voltage

RESET

UVBSR

Protection

Circuit State SET RESET

UVBSD

b1 b3

b2 b4 b6

High-lev e l ( no f a ult output)

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

(with the external shunt resistance and CR connection)

c1 : Normal operation: MOSFET ON and car rying current.

c2 : Short circuit current detection (SC trigger).

c3 : Hard MOSFET gate interrupt.

c4 : MOSFET turns OFF.

c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO.

c6 : Input “L” : MOSFET OFF state.

c7 : Input “H”: MOSFET ON state, but during the active period of fault output the MOSFET doesn’t turn ON.

c8 : MOSFET OFF state

Figure 8. Short-Circuit Current Protection (Low-side Operation only)

Low-Side Internal IGBT

Gate-Emitter Voltage

Low-Side

input Signal

Low-Side Output Current

Sensing Voltage

of the shunt

resistance

Fault Output Signal

SC Reference Voltage

CR circuit time

constant delay

Protection

circuit state SET RESET

c6 c7

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FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Note:

1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s

printed circui t board . The S PM inp ut sign al se ction i ntegrate s 3.3kΩ (typ.) pull-d own r esistor. Therefore, when using a n exte rn al filt erin g resistor, please pay attention to the sig-

nal voltage drop at input terminal.

2. The logic input is compatible with standard CMOS or LSTTL outputs.

Figure 9. Recommended CPU I/O Interface Circuit

Note:

1. It would be recommended that the bootstrap diode, DBS, has soft and fast recovery characteristics.

2. The bootstrap resistor ( RBS) should be 3 times greater than RE(H). The recommended valu e of RE(H) is 5.6Ω, but it can be increased up to 20Ω (maximum) for a slower dv/dt

of high-side.

3. The cer amic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible.

Fig. 10. Recommended Bootstrap Operation Circuit and Parameters

CPU

COM

5V-Line

1nF

Ω4.7k

IN(UL) IN(VL) IN(WL)

IN(UH) IN(VH) IN(WH)

VFO

Ω100

1nF

SPM

RPF=

CPF=

15V-Line

22uF 0.1uF

1000uF 1uF

One-Leg Diagram of SPM

Vcc

COM

Vcc

COM

OUT

Inverter

Output

These Values depend on PWM Control Algorithm

DBS

RBS

RE(H)

VSL

12 www.fairchildsemi.com

FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Note:

1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)

2. By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.

3. VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please ref er to Figure 9.

4. CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended.

5. VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms

(typ.)) Please refer to the note 5 for calculation method.

6. Input signal is Hig h-Active type. Th ere is a 3.3kΩ resistor insid e the IC to p ull do wn e ach inpu t sign al li ne to G ND. When emplo yin g RC co uplin g circ uit s, set up such RC co uple

that input signal agree with turn-off/turn-on threshold voltage.

7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.

8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2 µs.

9. Each capacitor should be mounted as close to the pins of the SPM as possible.

10. To prevent surge destruction, the wiring between the smoothing capacitor and the P&COM pins should be as short as possible. The use of a high frequency non-inductive

capacitor of around 0.1~ 0.22 µF between the P&COM pins is recom m en ded .

11. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.

12. CSPC15 should be over 1µF and mounted as close to the pins of the SPM as possible.

Fig. 11. Typical Application Circuit

Fault

15 V line

CBS CBSC

RBS DBS

CBS CBSC

RBS DBS

CBS CBSC

RBS DBS

CSP15 CSPC15

CFOD

5V lin e

RPF

CBPF

Vdc

CDCS

Gating UH

Gating VH

Gating WH

Gating WL

Gating VL

Gating UL

CPF

RFU

RFV

RFW

RSU

RSV

RSW

CFU

CFV

CFW

W -Phase Current

V-Phase Current

U-Phase Current

COM

VCC

IN(UL)

IN(VL)

IN(WL)

VFO

C(FOD)

C(SC)

OUT(UL)

OUT(VL)

OUT(WL)

NU (21)

NV (22)

NW (23)

U (24)

V (25)

W (26)

P (27)

(20) V S(W)

(19) V B(W)

(16) VS(V)

(15) V B(V)

(8) CSC

(7) C FOD

(6) VFO

(5) IN(WL)

(4) IN (VL)

(3) IN(UL)

(2) C OM

(1) VCC(L)

VCC

OUT

COM VS

OUT

COM

VCC

OUT

COM VS

(18) V CC(WH)

(17) IN(WH)

(14) V CC(VH)

(13) IN(VH)

(12) VS(U)

(11) V B(U)

(10) V CC(UH)

(9) IN(UH)

Input Signal for Short-

C ir c u it P r ote ction

CSC

RE(UH)

VSL

RE(VH)

RE(WH)

13 www.fairchildsemi.com

FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Detailed Package Outline Drawings

14 www.fairchildsemi.com

FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Detailed Package Outline Drawings (Continued)

15 www.fairchildsemi.com

FCBS0650 Rev. A

FCBS0650 Smart Power Module (SPM)

Detailed Package Outline Drawings (Continued)

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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μSerDes™

SILENT SWITCHER®

SMART ST ART™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic®

TINYOPTO™

TruTranslation™

UHC™

UltraFET®

UniFET™

VCX™

Wire™

Across the board. Around the world.™

The Power Franchise®

Programmable Active Droop™