1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU580G is part of the BFU5 family of transistors, suit able for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high linearity, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
Maximum stable gain 15.5 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise, high linearity amplifiers for ISM applications
Automotive applications (e.g., antenna amplifiers)
1.4 Quick reference data
BFU580G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014 Product data sheet
627
Table 1. Quick reference data
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
VCB collector-base voltage open emitter - - 24 V
VCE collector-emitter voltage open base - - 12 V
shorted base - - 24 V
VEB emitter-base voltage open collector - - 2 V
ICcollector current - 30 60 mA
Ptot total power dissipation Tsp 120 C[1] - - 1000 mW
hFE DC current gain IC=30mA; V
CE =8V 60 95 130
Cccollector c a pacitance VCB =8V; f=1MHz - 1.1 - pF
fTtransition frequency IC=30mA; V
CE = 8 V; f = 900 MHz - 11 - GHz
BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 2 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) =MSG.
2. Pinning information
3. Ordering information
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU580G and BFU590G samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Gp(max) maximum power gain IC=30mA; V
CE = 8 V; f = 900 MHz [2] - 15.5 - dB
NFmin minimum noise figure IC=5mA; V
CE = 8 V; f = 900 MHz; S=opt -0.75- dB
PL(1dB) output power at 1 dB gain
compression IC=30mA; V
CE =8V; Z
S=Z
L=50;
f=900MHz -13- dBm
Table 1. Quick reference data …continued
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1emitter
2base
3emitter
4 collector
PEE
Table 3. Orde ring information
Type number Package
Name Description Version
BFU580G - plastic surface-mounted package with increased heatsink; 4 leads SOT223
OM7966 - Customer evaluation kit for BFU580G and BFU590G [1] -
Table 4. Marking
Type number Marking
BFU580G BFU580
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Product data sheet Rev. 1 — 28 April 2014 3 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
5. Design support
6. Limiting values
7. Recommended operating conditions
[1] Tsp is the temperature at the solder point of the collector lead.
Table 5. Available design sup po rt
Download from the BFU580G product information page on http://www.nxp.com.
Support item Available Remarks
Device models for Agilent EEsof EDA ADS yes Based on Mextram device model.
SPICE model yes Based on Gummel-Poon device
model.
S-parameters yes
Noise parameters yes
Customer evaluation kit yes See Section 3 and Section 10.
Solder pattern yes
Application notes yes See Section 10.1
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCB collector-base voltage open emitter - 30 V
VCE collector-emitter voltage open base - 16 V
shorted base - 30 V
VEB emitter-base voltage open collector - 3 V
ICcollector current -100mA
Tstg storage temperature 65 +150 C
VESD electrostatic discharge voltage Human Body Model (HBM) According to JEDEC
standard 22-A114E -150 V
Charged Device Model (CDM) According to
JEDEC standard 22-C101B - 2kV
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VCB collector-base voltage open emitter - - 24 V
VCE collector-emitter voltage open base - - 12 V
shorted base - - 24 V
VEB emitter-base voltage open collector - - 2 V
ICcollector current - - 60 mA
Piinput power ZS= 50 --10dBm
Tjjunction temperature 40 - +150 C
Ptot total power dissipation Tsp 120 C[1] --1000mW
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Product data sheet Rev. 1 — 28 April 2014 4 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
8. Thermal characteristics
[1] Tsp is the temperature at the solder point of the collector lead.
Tsp has the following relation to the ambient temperature Tamb:
Tsp =T
amb +PRth(sp-a)
With P being the power dissipation and Rth(sp-a) being the thermal resistance between the solder point and
ambient. Rth(sp-a) is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.
9. Characteristics
Table 8. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction to solder point [1] 30 K/W
Fig 1. Power derating curve
DDD
7VS&
3WRWWRW
3WRW
P:P:P:
Table 9. Characteristics
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V(BR)CBO collector-base breakdown voltage IC= 100 nA; IE=0mA 24 - - V
V(BR)CEO collector-emitter breakdown voltage IC= 150 nA; IB=0mA 12 - - V
ICcollector current -3060mA
ICBO collector-base cut-off current IE=0mA; V
CB =8V - <1 - nA
hFE DC current gain IC=30mA; V
CE = 8 V 60 95 130
Ceemitter capacitance VEB = 0.5 V; f = 1 MHz - 1.5 - pF
Cre feedback capacitance VCE = 8 V; f = 1 MHz - 0.54 - pF
Cccollector c a pacitance VCB = 8 V; f = 1 MHz - 1.1 - pF
fTtransition frequency IC=30mA; V
CE = 8 V; f = 900 MHz - 11 - GHz
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Product data sheet Rev. 1 — 28 April 2014 5 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
Gp(max) maximum power gain f = 433 MHz; VCE =8V [1]
IC=5mA - 20 - dB
IC=20mA - 22 - dB
IC= 30 mA - 22.5 - dB
f = 900 MHz; VCE =8V [1]
IC=5mA - 16 - dB
IC= 20 mA - 15.5 - dB
IC= 30 mA - 15.5 - dB
f = 1800 MHz; VCE =8V [1]
IC=5mA - 9.5 - dB
IC=20mA - 10 - dB
IC= 30 mA - 10.5 - dB
s212insertion power gain f = 433 MHz; VCE =8V
IC=5mA - 18 - dB
IC=20mA - 20 - dB
IC= 30 mA - 20.5 - dB
f = 900 MHz; VCE =8V
IC= 5 mA - 12.5 - dB
IC=20mA - 14 - dB
IC= 30 mA - 14.5 - dB
f = 1800 MHz; VCE =8V
IC=5mA - 7.5 - dB
IC= 20 mA - 8.5 - dB
IC= 30 mA - 8.5 - dB
NFmin minimum noise figure f = 433 MHz; VCE =8V; S= opt
IC=5mA - 0.65 - dB
IC= 20 mA - 1.05 - dB
IC= 30 mA - 1.25 - dB
f = 900 MHz; VCE =8V; S= opt
IC=5mA - 0.75 - dB
IC= 20 mA - 1.1 - dB
IC= 30 mA - 1.3 - dB
f = 1800 MHz; VCE =8V; S= opt
IC=5mA - 0.9 - dB
IC= 20 mA - 1.2 - dB
IC= 30 mA - 1.4 - dB
Table 9. Characteristics …continued
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
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Product data sheet Rev. 1 — 28 April 2014 6 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
[1] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) =MSG.
Gass associated gain f = 433 MHz; VCE =8V; S= opt
IC= 5 mA - 19.5 - dB
IC= 20 mA - 20.5 - dB
IC= 30 mA - 20.5 - dB
f = 900 MHz; VCE =8V; S= opt
IC= 5 mA - 13.5 - dB
IC= 20 mA - 14.5 - dB
IC= 30 mA - 14.5 - dB
f = 1800 MHz; VCE =8V; S= opt
IC=5mA - 8.5 - dB
IC=20mA - 9 - dB
IC=30mA - 9 - dB
PL(1dB) output power at 1 dB gain compression f = 433 MHz; VCE =8V; Z
S=Z
L=50
IC= 20 mA - 12.5 - dBm
IC= 30 mA - 15.5 - dBm
f = 900 MHz; VCE =8V; Z
S=Z
L=50
IC= 20 mA - 12.5 - dBm
IC= 30 mA - 14.5 - dBm
f = 1800 MHz; VCE =8V; Z
S=Z
L=50
IC=20mA - 12 - dBm
IC=30mA - 14 - dBm
IP3ooutput third-order intercept point f1= 433 MHz; f2= 434 MHz; VCE =8V;
ZS=Z
L=50
IC=20mA - 22 - dBm
IC=30mA - 25 - dBm
f1= 900 MHz; f2= 901 MHz; VCE =8V;
ZS=Z
L=50
IC=20mA - 22 - dBm
IC=30mA - 24 - dBm
f1= 1800 MHz; f2=1801MHz;
VCE =8V; Z
S=Z
L=50
IC= 20 mA - 21.5 - dBm
IC= 30 mA - 23.5 - dBm
Table 9. Characteristics …continued
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 7 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
9.1 Graphs
Tamb =25C.
(1) IB=25A
(2) IB=75A
(3) IB= 125 A
(4) IB= 175 A
(5) IB= 225 A
(6) IB= 275 A
(7) IB= 325 A
Fig 2. Collector current as a function of collector - emitter voltage; typical values
Tamb =25C.
(1) VCE =3.0V
(2) VCE =8.0V
VCE =8V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +125 C
Fig 3. DC current gain as a function of collector
current; typical values Fig 4. DC current gain as a function of collector
current; typical values
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Product data sheet Rev. 1 — 28 April 2014 8 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
Tamb =25C.
(1) VCE =3.0V
(2) VCE =8.0V
Tamb =25C.
(1) VCE =3.0V
(2) VCE =8.0V
Fig 5. Collector current as a function of base-emitter
voltage; typical values Fig 6. Base current as a function of base-emitte r
voltage; typical values
VCE =3V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +125 C
IC = 0 mA; f = 1 MHz; Tamb =25C.
Fig 7. Re verse base current as a functio n of
emitter-base voltage; typical values Fig 8. Collector capacitance as a function of
collector-base voltage; typical values
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BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 9 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
Tamb =25C.
(1) VCE =3.3V
(2) VCE =5.0V
(3) VCE =8.0V
(4) VCE = 12.0 V
Fig 9. Transition frequency as a function of collector current; typical values
IC=20 mA; V
CE =8V; T
amb =25C. IC=30mA; V
CE =8V; T
amb =25C.
Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typ ic al valu es
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BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 10 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
VCE =8V; T
amb =25C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
VCE =8V; T
amb =25C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 12. Insertio n power gain as a function of co lle c t or
current; typical values Fig 13. Maximum power gai n as a function of collector
current; typical values
DDD
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_V_V_
_V_
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*SPD[SPD[
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BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 11 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
IC=20 mA; T
amb =25C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
IC=30mA; T
amb =25C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 14. Insertio n power gain as a function of
collector -em itter voltage; typica l va lues Fig 15. Maximum power gain as a func tion of
collector-emitter voltage; typical values
DDD
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*SPD[SPD[
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BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 12 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC= 20 mA
(2) IC= 30 mA
Fig 16. Input reflection co efficient (s11); typical values
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC= 20 mA
(2) IC= 30 mA
Fig 17. Output reflection coefficient (s22); typical values
DDD
DDD
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Product data sheet Rev. 1 — 28 April 2014 13 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
VCE =8V; T
amb =25C.
(1) f1 = 433 MHz; f2 = 434 MHz
(2) f1 = 900 MHz; f2 = 901 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
VCE =8V; T
amb =25C.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 18. Output third-order intercept point as a function
of collector current; typical values Fig 19. Output power at 1 dB gain compression as a
function of collector current; typical values
IC= 30 mA; Tamb =25C.
(1) f1 = 433 MHz; f2 = 434 MHz
(2) f1 = 900 MHz; f2 = 901 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
IC=30 mA; T
amb =25C.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 20. Output third-order intercept point as a function
of collector-emitter voltage; typical value s Fig 21. Output power at 1 dB gain compression as a
function of collector-emitter voltage;
typical values
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BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 14 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
VCE =8V; T
amb =25C; S = opt.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
VCE =8V; T
amb =25C; S = opt.
(1) IC=1mA
(2) IC=2mA
(3) IC=3mA
(4) IC=5mA
(5) IC=8mA
(6) IC=10mA
(7) IC=15mA
(8) IC=20mA
Fig 22. Minimum nois e figure as a function of
collector current; typical valu es Fig 23. Minimum noise figu re as a function of
frequency; typical values
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BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 15 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
10. Application information
More information about the following application example can be found in the application
notes. See Section 5 “Design support”.
The following application example can be imple mented using the evaluation kit. See
Section 3 “Ordering information” for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 “Design support”.
VCE = 8 V; 400 MHz f 2 GHz.
(1) IC=1mA
(2) IC=2mA
(3) IC=3mA
(4) IC=5mA
(5) IC=10mA
(6) IC=20mA
(7) IC=30mA
(8) IC=45mA
Fig 24. Optimum re flection coefficient (opt); typical values
DDD
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Product data sheet Rev. 1 — 28 April 2014 16 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
10.1 Application example: FM LNA
FM LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11500.
Remark: fine tuning of components maybe required depending on PCB parasitics.
Fig 25. Schematic FM LNA
Table 10. Application performan ce data at 98 MHz
ICC = 25 mA; VCC = 5 V
Symbol Parameter Conditions Min Typ Max Unit
s212insertion power gain - 22 - dB
NF noise figure - 1.6 - dB
IP3ooutput third-order intercept point f = 88 MHz to 108 MHz;
carrier spacing = 100 kHz -15- dBm
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BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 17 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
11. Package outline
Fig 26. Package outline SOT223
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BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 18 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
12. Handling information
13. Abbreviations
14. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 11. Abbreviations
Acronym Description
AEC Automotive Electronics Council
FM Frequency Modulation
ISM Industrial, Scientific and Medical
LNA Low-Noise Amplifier
MSG Maximum Stable Gain
NPN Negative-Positive-Negative
SMA SubMiniature version A
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU580G v.1 20140428 Product data sheet - -
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Product data sheet Rev. 1 — 28 April 2014 19 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
15. Legal information
15.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device (s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full dat a sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless ot herwise agreed in writing, the p roduct is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications an d ther efo re su ch inclusi on a nd/or use is at the cu stome r's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability rela ted to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BFU580G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 20 of 21
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
No offer to sell or license — Nothing in this document may be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a pri or
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BFU580G
NPN wideband silicon RF transistor
© NXP Semiconductors N.V. 2014. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 April 2014
Document identifier: BFU58 0G
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
17. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Design support . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Recommended operating conditions. . . . . . . . 3
8 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
9 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
9.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Application information. . . . . . . . . . . . . . . . . . 15
10.1 Application example: FM LNA . . . . . . . . . . . . 16
11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17
12 Handling information. . . . . . . . . . . . . . . . . . . . 18
13 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18
14 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
15.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
15.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
15.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
15.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
16 Contact information. . . . . . . . . . . . . . . . . . . . . 20
17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
