This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification M Di ain sc te on na tin nc ue e/ d 1.000.05 0.800.05 Unit: mm 1.60+0.05 -0.03 Features 1 (0.375) 1.600.05 5 0.85+0.05 -0.03 3 2 5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 C Storage temperature Tstg -55 to +125 C 1 : Base 2 : Emitter 3 : Collector 0.10 max. Absolute Maximum Ratings Ta = 25C 0 to 0.02 (0.50)(0.50) 0.70+0.05 -0.03 0.270.02 (0.80) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. * Optimum for RF amplification, oscillation, mixing, and IF of FM/SAM radios * SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.12+0.03 -0.01 EIAJ : SC-89 SSMini3-F1 Package Marking Symbol: K Electrical Characteristics Ta = 25C 3C Symbol Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 30 V VCEO IC = 2 mA, IB = 0 20 V VEBO on tin Collector-emitter voltage (Base open) ue Parameter Di sc Emitter-base voltage (Collector open) Transition frequency e/ Forward current transfer ratio * te na nc Reverse transfer capacitance (Common emitter) Conditions Min IE = 10 A, IC = 0 5 hFE VCE = 10 V, IC = 1 mA 70 fT VCB = 10 V, IE = -1 mA, f = 200 MHz 150 Cre VCB = 10 V, IE = -1 mA, f = 10.7 MHz Typ Max Unit V 250 230 MHz 1.3 pF Rank B hFE 70 to 160 Publication date: September 2004 C 110 to 250 Pl M ain Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification SJC00314AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4655J IC VCE 120 30 Collector current IC (mA) Ta = 25C 100 80 IC VBE 30 VCE = 10 V IB = 200 A 180 A 25 160 A 25 Collector current IC (mA) 35 140 A 120 A 20 25C 20 Ta = 85C M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) PC Ta 140 40 20 0 80 40 0 ICE = 10 V Ta = 85C -25C 25C 0.01 0.1 6 10 100 0 12 0.2 0.4 25C -25C 100 50 1 10 Collector current IC (mA) Pl SJC00314AED 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) Cob VCB Ta = 85C tin on Di sc e/ nc te na M ain 10 150 ue Collector current IC (mA) 2 8 VCE = 10 V 200 0 1 4 hFE IC 250 Forward current transfer ratio hFE 0.1 2 Collector-emitter voltage VCE (V) VCE(sat) IC 1 10 0 0 120 -25C 5 5 Ambient temperature Ta (C) Collector-emitter saturation voltage VCE(sat) (V) 10 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 15 15 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 60 100 A 100 10 f = 1 MHz Ta = 25C 1 0.1 0 10 20 30 Collector-base voltage VCB (V) 40 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.