SAMSUNG SEMICONDUCTOR INC | TIPST SERIRES LYE o 0 Brseuiua 0007736 3 q (T IP31/31A/31B/31C) NPN EXITAXIAL: SILICON TRANSISTOR MEDIUM POWER LINEAR - SWITCHING APPLICATIONS * Complement to TIP32/32A/32B/32C ABSOLUTE MAXIMUM RATINGS (T,=25C) TrI3- 4 TO-220 Characteristic Symbol Rating Unit Coltector-Base Voltage : TIP31 Veo 40 Vv : . >. TIPS1A 60 Vv > TIiP31B 80 Vv : TIP31C 100 Vv Collector-Emitter Voltage : TIP31 Vero 40 Vv : TIP31A 60 7 | Sy : TIP31B 80 Vv : TIP31C 400 Vv Emitter-Base Voltage Veso 5 Vv Collector Current (DC) Ie 3: A Collector Current (Pulse) Ib 5 A Base Current . ls 1 A Collector Dissipation (T.=25C) Po 40 Ww Collector Dissipation (T.=25C) Po 2- Ww Junction Temperature Tj 150 c Storage Temperature Tstg 65~150 | C 1, Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (T.=25C) . Characteristic Symbo! Test Condition Min | Max | Unit *Collector Emitter Sustalning Voltage : TIP31 BVceo (sus) -} [-=30mA, fs=0 40 Vv : TIP31A 60 Vv : TIP31B 80 Vv : TIP31C 100 Vv Collector Cutoff Current : TIP31/31A lceo Vce=30V, Ip=O0 0.3 | mA > TIP31B/31C Vce=60V, lp=O 0.3 mA Collector Cutoff Current : TIP31 loes * Vce=40V, Veg=0 200 pA : TIP31A Vee=60V, Vep=0 200 pA : TIP31B Vce=80V, Veg=0 200 BA : TIP31C Vce=100V, Veg=O0 .200 pA Emitter Cutoff Current leao ne=5V, =O 1 mA *DC Current Gain hee Vce=4V, b= 1A 25 Vee=4V, lo=3A 10 50. i. * Collector-Emitter Saturation Voltage Vee (sat) b=3A, le=375mA 1.2 Vv * Base-Emitter On Voltage Vee (on) Vee=4V, [-=3A : 1.8 v Current Gain Bandwidth Product fr Vee= 10V, lb=500mA 3.0 MHz f=1MHz * Pulse Test: PW<300us, Duty Cycles2% .291 HH SAMSUNG SEMICONDUCTORTips1'SeRIRES > MEO Bescuau2 oooz717-3 fj (TIP31/31A/31B/31C) NPN EXITAXIAL SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR INC T-33-11 " OC CURRENT GAIN - BASE-EMITTER SATURATION VOLTAGE - * COLLECTOR-EMITTER SATURATION VOLTAGE . 8 100 bez, DC CURRENT GAIN g Vce (sat) Vie(sat)(mV}, SATURATION VOLTAGE 1 35 10 3050100 300 1000 3000 "10000" t 3.6 #10 3050100 300 1000 3000 10000 Ie{mA), COLLECTOR CURRENT k{mA)}, COLLECTOR CURRENT POWER DERATING SAFE OPERATING AREA PW), POWER DISSIPATION 1,{A), COLLECTOR CURRENT Veeo MAX. Vceo MAX. Vero MAX: Veeo. 0.1 45 10 30 50) (100 300 Vex{), COLLECTOR-EMITTER VOLTAGE ce SAMSUNG SEMICONDUCTOR 292cepiepger ee LYE D 7764142 0007 TIP32 SERIRES i GeeLa s I (TIP32/32A/32B/32C) PNP EXITAXIAL SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR INC 7-33-09 MEDIUM POWER LINEAR ~ SWITCHING APPLICATIONS . Complement to TIP31/31 AI31BI31C " To-220 ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbo! Rating Unit Collector-Base Voltage: TIP32 Veso ~40 ve : TIP32A -60 Vv : TIP32B -80 Vv > TIP32C -100 Vv Collector-Emitter Voltage : TIP32 Vceo -40 Vv : TIP32A -6d fv : TIP32B ~80 Vv . : TIP326 ; -~100 V 1. Base 2. Cofector 3. Emitter Emitter-Base Voltage Veno - -5 Vv Collector Current (DC) I -3 A Collector Current (Pulse) kk - 5 A Base Current - . la 1 A Collector Dissipation (T.=25C) Py 40 Ww / Collector Dissipation (T4=25C) . | Pe 2 WwW Junction Temperature. - TV 150 C Storage Temperature Tstg 65~150 | C , ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbot Test Condition Min | Max | Unit Collector Emitter Sustaining Voltage : TIP32 BVceo (sus) | lb=30mA, ts=0 " 40 Vv : TIP32A ~-60 Vv : TIP32B . ~80 |v . : TIP32C -100 Vv Collector Cutoff Current - 1 TIP32/32A | keo Vee=30V, ls=0 0.3} mA . : TIP32B/32C] Voe=60V, Ip=0 ~0.3} mA Collector Cutoff Current : TIP32 kes Vce=40V, Vin=0 200 | pA , 1 TIP32A Vce=60V, Vea=0 200 | pA : TIP32B Vce=80V, Veg=0 200} yA . : TIP32C } Vee=~100V, Voe=0 2001 pA Emitter Cutoff Current JeB0 Vee=5V, Ie=0 : -11 mA * DG Current Gain Nee Vce=-4V, b=1A~ 25 . se Vcr=4V, h=3A 10 50 * Cotlector-Emitter Saturation Voltage Vex (sat) =3A, ls=-375mA -- -1.2/ Vv * Base-Emitter On Voltage Vee (on) Vee=4V, b=-3A -18) V Current Gain Bandwidth Product fr | Vce=-10V, b=500mA | - 3.0 MHz: |- . f=1MHz ~ * Pulse Test: PW<300p8, Duty Cycle<2% eff samsunc SEMICONDUCTOR 293TIP3S2 SERIRES " ave 0 PPzseuzu2 oooz719 2 (TIP32/32A/32B/32C) PNP EXITAXIAL SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR . INC DC CURRENT GAIN 1000 500 300 __ tre, DC CURRENT GAIN 8 -3-5 -10 h(mA), COLLECTOR CURRENT POWER DERATING PyfW), POWER DISSIPATION e 60 100 150 Te{C), CASE TEMPERATURE -3050400 -G00 -1000 -3000 #10000..-- 200 T-33 49 BASE-EMITTER SATURATION VOLTAGE TION VOLTAGE : 4 er : Veelaut) Vaefsathmv), ee 8 a im) -3-5 +40 -3050400 -200 ~1000 -3000 - 10000 L{mA}, COLLECTOR CURRENT SAFE OPERATING AREA ~3.0 4 a ~ IefA), COLLECTOR CURRENT ' Vero TIP92A, Veco MAX. Veeo MAX. TP32G "04 45 40 Vee, COLLECTOR-EMITTER VOLTAGE 0 = -50 = +00 7300 7 abe SAMSUNG SEMICONDUCTOR 294SAMSUNG SEMICONDUCTOR INC 14E D TIP41 SERIRES B esu4.42 oo072720 aq (TIP41/41A/41B/41C) NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR * SWITCHING APPLICATIONS * Complement to TIP42/42A/42 8/42C aC ABSOLUTE MAXIMUM RATINGS (T,=25C) T-33~ jj f TO-220 ! - 1. Base 2. Collector 3. Emitter , ey ee Characteristic Symbol Rating Unit Collector-Base Voltage =: TIP41 Veeo 40 Vv : TIP41A 60 Vv > TIP41B 80 Vv : TIP4iC 100 Vv Collector-Emitter Voltage : TIP41 Veco 40 wf. V > TIP4iA 60 Vv : TIP41B 80 Vv : TIP41C, 100 Vv Emitter-Base Voltage Veso 5 Vv Collector Current (DC) ib 6 A Collector Current (Pulse) k 10 A Base Current la 2 A Collector Dissipation (T,=25C)} Py 65 WwW Cotector Dissipation (T, a=25C) Py 2 Ww Junction Temperature Tj 150 C Storage Temperature . Tstg -65~160 | C ELECTRICAL CHARACTERISTICS (T-. =25C) Characteristic - Symbo! Test Condition Min | Max | Unit *Gollector Emitter Sustaining Vottage : TIP41 | BVceo (sus) | ic-=30mA, Ip=0 40 Vv . : TIP41A . 60 Vv : TIP41B 80 Vv : TIP41C 100 Vv Collector Cutoff Current : TIP4U/41A keeo Vce=3OV, =O 0.7.{ mA : TIP41B/41C |. Vce=60V, [5=0 0.7 mA Collector Cutoff Current : TIP41 lees Vce=40V, Veg=0 400 | yA : TIP41A Vce=60V, Veg=0 400 vA : TIP41B Vce=80V, Veg=O 400 HA : TIP41C Vog=100V, Ves=0 400 | yA Emitter Cutoff Current : leso Vee=5V, le=0 1 mA *DC Current Gain Nee Vce=4V, b=0,3A 30 Vce=4V, b=3A 15 75 . + Collector-Emitter Saturation Voltage - | Vee (sat) L=6A, ls=600mA . 1.5 Vv *Base-Emitter On Voltage Vee (on) Vce=4V, le=6A 2.0 Vv Current Gain Bandwidth Product fr Vce=10V, le=500mA | 3.0 MHz . - f= MHz * Pulse Test: PW<300ys, Duty Cycle<2% * 295 ck SAMSUNG SEMICONDUCTORSAMSUNG $ ENTCONDUC TOR INC TIP41 SERIRES LYE D Brsuuise ooorzer s ff (T IPATIATAIAIBI4IC) NPN EXITAXIAL SILICON TRANSISTOR St DC CURRENT GAIN . her, OC CURRENT GAIN 35 10 3050100 300 1000 3000 tod00 *~ I(ma), COLLECTOR CURRENT POWER DERATING SW POWER DISSIPATION E*) 100 150 200 Tel*C}, CASE TEMPERATURE Ves (aat) Vaefeat) (mV), SATURATION VOLTAGE. {A}, COLLECTOR CURRENT T-33-11 BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE 8 1 35 10 Io{mA), COLLECTOR CURRENT 3050100 300 1000 3000 10000 SAFE OPERATING AREA ag TIP41A Veco TIP41B Veco MAX. t 3 5 10 30 650 100 300 Vee(V), COLLECTOR-EMITTER VOLTAGE cee SAMSUNG SEMICONDUCTOR 296