FM200TU-2A
6-Pack High Power MOSFET Module
100 Amperes/100 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
27/12 Rev. 1
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol FM200TU-2A Units
Channel Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Drain-Source Voltage (G-S Short) VDSS 100 Volts
Gate-Source Voltage (D-E Short) VGSS ±20 Volts
Drain Current (TC = 25°C) ID(rms) 100 Arms
Peak Drain Current (Pulse) IDM 200* Amperes
Avalanche Current (L = 10µH, Pulse) IDA 100* Amperes
Source Current (TC = 25°C)** IS(rms) 100 Arms
Peak Source Current (Pulse)** ISM 200* Amperes
Maximum Power Dissipation (TC = 25°C, Tj < 150°C)*** PD 410 Watts
Maximum Peak Power Dissipation (TC' = 25°C, Tj < 150°C)*** PD 560 Watts
Mounting Torque, M6 Main Terminal — 40 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 600 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Drain-Cutoff Current IDSS VDS = VDSS, VGS = 0V — — 1.0 mA
Gate-Source Threshold Voltage VGS(th) ID = 10mA, VDS = 10V 4.7 6.0 7.3 Volts
Gate Leakage Current IGSS VGS = VGSS, VDS = 0V — — 1.5 µA
Static Drain-Source On-State Resistance rDS(on) ID = 100A, VGS = 15V, Tj = 25°C — 2.4 3.3 mΩ
(Chip) ID = 100A, VGS = 15V, Tj = 125°C — 4.1 — mΩ
Static Drain-Source On-State Voltage VDS(on) ID = 100A, VGS = 15V, Tj = 25°C — 0.24 0.33 Volts
(Chip) ID = 100A, VGS = 15V, Tj = 125°C — 0.41 — Volts
Lead Resistance Rlead ID = 100A, Terminal-Chip, Tj = 25°C — 1.2 — mΩ
ID = 100A, Terminal-Chip, Tj = 125°C — 1.68 — mΩ
Input Capacitance Ciss — — 50 nF
Output Capacitance Coss VDS = 10V, VGS = 0V — — 7 nF
Reverse Transfer Capacitance Crss — — 4 nF
Total Gate Charge QG VDD = 48V, ID = 100A, VGS = 15V — 760 — nC
Inductive Turn-on Delay Time td(on) — — 400 ns
Load Rise Time tr VDD = 48V, ID = 100A, — — 300 ns
Switch Turn-off Delay Time td(off) VGS1 = VGS2 = 15V, RG = 13Ω, — — 450 ns
Time Fall Time tf Inductive Load Switching Operation, — — 300 ns
Diode Reverse Recovery Time** trr IS = 100A — — 250 ns
Diode Reverse Recovery Charge** Qrr — 3.6 — µC
Source-Drain Voltage VSD IS = 100A, VGS = 0V — — 1.3 Volts
* Pulse width and repetition rate should be such that device channel temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi).
***TC' measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.