FEATURE SPECIFICATIONS Controlled Current Transfer Ratio 45% to 90% (specified conditions) Maximum Turn-on time 7 useconds (specified condition) Maximum Turn-off time 7 seconds (specified condition) Surge Isolation Rating 3550 volts DC 2500 volts AC, rms Steady-state Isolation Rating 3150 volts DC 2250 volts AC, rms Underwriters Laboratory (U.L.) recognized File E50151 DESIGNER SERIES PHOTOTRANSISTOR OPTOISOLATORS MCT271 DESCRIPTION The MCT271 is a_ phototransistor-type optically coupled isolator. An infrared emitting diode manu- factured from specially grown gallium arsenide is selec- tively coupled with an NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. APPLICATIONS Switching networks @ Power supply regulators @ Digital logic inputs e e Microprocessor inputs Appliance sensor systems PACKAGE DIMENSIONS < A | XY 6 5 4 | oe D SYMBOL . B E B | | | F 1 2 3 c1240 a ot c1240 @ xO RQ Co 4 ov ~ oe oO < f . @ N 1 Q N SEATING 1 NOTES PLANE } G 1. INSTALLED POSITION OF LEAD CENTERS 2. FOUR PLACES M 3. OVERALL INSTALLED POSITION 4. THESE MEASUREMENTS ARE MADE FROM THE SEATING PLANEELECTRICAL CHARACTERISTIC CURVES 100 100 60 60 40 40 20 78C f 25C / 28C 10 6.0 40 9 10 11 42 13 14 15 (Volts} C1285 Fig. 1. Forward Voltage vs. Forward Current 10 2 Fig. 2. Collector Current vs. Collector to Emitter Voltage MCT271 (25C Free air temperature unless specified) ce \e ip = 20 mA (p= 10 mA 4 610 20 4060 10 o 1 2 Veg ~ (Volts) C1286 345 6 7 tp (ma) 8 9 10 11 1287 Fig. 3. Collector Current vs. Forward Current 'p 25 4A 23 Vog = 0.4V 20 nA =~ NOS i Sd =) 1S uA 10 pA = NS te = 20mA YW 5 yA le (mA) Ler t Ip = 10mA Voc 7 10V GN aw OO CURRENT TRANSFER RATION % 3.0 pA 1.0uA TA=25C MI LA 1.2.3.4 .5 7 10 2.0 10K Voe-V 5.0 Fig. 4. Collector Current vs. Collector to Emitter Voltage Rape BASE RESISTANCE & C1331 Fig. 5. Sensitivity vs. Base Resistance 90 1 Veg = 10V 80 70 60 50 NORMALIZED CTR (%} 0 +25 +76 TEMP (C) +50 Fig. 7. Current Transfer Ratio (unsaturated) vs. Temperature +100 | 1290 &8 BR 10 KQ 10 MQ C1289 100 KQ Rpg (2 Fig. 6. Saturated CTR vs. Base to Emitter Resistance 100K 1KQ IMQ NORMALIZEO INITIAL CTR (%} AL) = 100 mw 1000 10,000 OPERATING TIME (Hours) 100,000 C1281 Fig. 8. Current Transfer Ratio vs. Operating Time ABSOLUTE MAXIMUM RATINGS TOTAL PACKAGE Storage temperature Operating temperature Lead temperature (Soldering, 10 sec) Total package power dissipation @ 25C (LED plus detector) Derate linearly from 25C -55C to 150C -55C to 100C INPUT DIODE Forward DC current Reverse voltage Peak forward current (1 us pulse, 300 pps) | Power dissipation 25C ambient Derate linearly from 25C OUTPUT TRANSISTOR Power dissipation @ 25 &: Derate linearly from 25C .... wee eee . 200 mW "2.67 mW/C