EMX2DXV6T5 - ON Semiconductor - Datasheet.Directory

November, 2005 − Rev. 2

Publication Order Number:

EMX2DXV6T5/D

EMX2DXV6T5

Preferred Devices

Dual NPN General Purpose

Amplifier Transistor

This NPN transistor is designed for general purpose amplifier

applications. This device is housed in the SOT-563 package which is

designed for low power surface mount applications, where board

space is at a premium.

Features

•Reduces Board Space

•High hFE, 210−460 (Typical)

•Low VCE(sat), < 0.5 V

•These are Pb−Free Devices

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Value Unit

Collector-Base Voltage V(BR)CBO 60 Vdc

Collector-Emitter Voltage V(BR)CEO 50 Vdc

Emitter-Base Voltage V(BR)EBO 7.0 Vdc

Collector Current − Continuous IC100 mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated) Symbol Max Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD357 (Note 1)

2.9 (Note 1)

mW/°C

Thermal Resistance,

Junction-to-Ambient

RqJA 350 (Note 1) °C/W

Characteristic

(Both Junctions Heated) Symbol Max Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD500 (Note 1)

4.0 (Note 1)

mW/°C

Thermal Resistance,

Junction-to-Ambient

RqJA 250 (Note 1) °C/W

Junction and Storage

Temperature Range

TJ, Tstg −55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ Minimum Pad

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MARKING

DIAGRAM

http://onsemi.com

SOT−563

CASE 463A

STYLE 2

Device Package Shipping†

ORDERING INFORMATION

EMX2DXV6T5 SOT−563

(Pb−Free)

8000/Tape & Reel

3R M G

DUAL NPN GENERAL

PURPOSE AMPLIFIER

TRANSISTORS

SURFACE MOUNT

(3) (2)

(4) (5) (6)

(1)

EMX2DXV6T5G SOT−563

(Pb−Free)

8000/Tape & Reel

3R = Specific Device Code

M = Month Code

G= Pb−Free Package

(Note: Microdot may be in either location)

EMX2DXV6T5

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic Symbol Min Typ Max Unit

Collector-Base Breakdown Voltage

(IC = 50 mAdc, IE = 0)

V(BR)CBO 60 − − Vdc

Collector-Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO 50 − − Vdc

Emitter-Base Breakdown Voltage

(IE = 50 mAdc, IE = 0)

V(BR)EBO 7.0 − − Vdc

Collector-Base Cutoff Current

(VCB = 60 Vdc, IE = 0)

ICBO − − 0.5 mA

Emitter-Base Cutoff Current

(VEB = 7.0 Vdc, IB = 0)

IEBO − − 0.5 mA

Collector-Emitter Saturation Voltage (Note 2)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

− − 0.4

Vdc

DC Current Gain (Note 3)

(VCE = 6.0 Vdc, IC = 1.0 mAdc)

hFE 120 −560

−

Transition Frequency

(VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)

fT−180 −MHz

Output Capacitance

(VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)

COB −2.0 −pF

2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

3. Pulse Test: Pulse Width ≤300 ms, D.C. ≤2%.

EMX2DXV6T5

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TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. IC − VCE

VCE, COLLECTOR VOLTAGE (V)

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. On Voltage

IC, COLLECTOR CURRENT (mA)

024 6 8

TA = 25°C160 mA

140 mA

120 mA

100 mA

80 mA

60 mA

40 mA

IB = 20 mA

DC CURRENT GAIN

1000

0.1

100

10 1 10 100

TA = 25°C

TA = − 25°C

TA = 75°C

VCE = 10 V

VCE, COLLECTOR-EMITTER VOLTAGE (V)

0.01

1.5

0.5

00.1 1 10 100

TA = 25°C

COLLECTOR VOLTAGE (mV)

900

0.2

800

700

600

500

400

300

200

100

0.5 1 5 10 20 40 60 80 100 150 200

TA = 25°C

VCE = 5 V

Figure 5. Capacitance

VCB (V)

Figure 6. Capacitance

VEB (V)

10 1234

Cib, INPUT CAPACITANCE (pF)

110 20 30 40

Cob, CAPACITANCE (pF)

EMX2DXV6T5

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PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

DIM MIN NOM MAX

MILLIMETERS

A0.50 0.55 0.60

b0.17 0.22 0.27

D1.50 1.60 1.70

E1.10 1.20 1.30

e0.5 BSC

L0.10 0.20 0.30

1.50 1.60 1.70

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

MIN NOM MAX

INCHES

0.08 (0.003) X

b6 5 PL

−X−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE MATERIAL.

12 3

1.35

0.0531

0.5

0.0197

ǒmm

inchesǓ

SCALE 20:1

0.5

0.0197

1.0

0.0394

0.45

0.0177

0.3

0.0118

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.08 0.12 0.18 0.003 0.005 0.007

STYLE 2:

PIN 1. EMITTER 1

2. EMITTER2

3. BASE 2

4. COLLECTOR 2

5. BASE 1

6. COLLECTOR 1

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EMX2DXV6T5/D

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