Philips Components BAT74 blue binder, tab 7 DEVELOPMENT DATA This data sheet contains advance information and specifications which are subject to change without notice. SCHOTTKY BARRIER DIODE Two separate silicon epitaxial Schottky barrier diodes with an integrated p-n junction protection ring in one microminiature SOT-143 envelope, intended for surface mounting (SMD technology). The device features a low forward voltage drop. QUICK REFERENCE DATA single double-diode diode operation Continuous reverse voltage VR max. 30 30 V Continuous reverse voltage series connection VR max. - 60 V Forward current IF max. 200 110 mA Repetitive peak forward current lFRM max. 300 200 mA Non-repetitive peak forward current lESM max. 600 mA Total power dissipation up to Tamb = 25 PC Prot max. 230 mW Reverse recovery time when switched from Ip = 10 mA to lp = 10mA; Ry = 1009; measured at |p = 1 mA ter <S 5 ns MECHANICAL DATA Dimensions in mm Fig. 1 SOT-143. 3.0 0,150 2:8 " pEI| |) feb @ale] pe LE + t Marking code : L41 14 2,5 1,2. max 4 3 an 1 2 1 2 ~ je | ESQICNEY 0,88 _ 4, 0,48_ 6, |<{,7]>! 7285014.6 TOP VIEW Bi PHILIPS |[enBAT74 RATINGS Limiting vatues in accordance with the Absolute Maximum System (IEC 134) Continuous reverse voltage VR Continuous reverse voltage series connection VR Forward current (see Fig. 2) le Repetitive peak forward current 'ERM Non-repetitive peak forward current t<1s lFSm Total power dissipation up to Tamb = 25 OC Prot Storage temperature T stg Junction temperature Tj THERMAL RESISTANCE From junction to ambient mounted on a ceramic substrate of 10 mm x 8 mm x 0,6 mm Rth j-a CHARACTERISTICS, per diode Tamb = 25 C unless otherwise specified Forward voltage ip =0,1mA ' Vv Ip= tma** F Ip = 10mA Ip = 30mA** VF Ip = 100 mA VE Reverse current VR=25V IR Reverse breakdown voltage V(BR)R Diode capacitance VR=1V;f=1MHz Cq Reverse recovery time when switched from IF = 10 mA to Ip = 10 mA; Ry = 100 2, measured at lR = 1 mA ter max. max. max. max. max. NU AAAN VA I IN single double-diode diode Operation 30 30 V - 60 V 200 110*mA 300 200 mA 600 mA 230 mw 65 to + 150 oC 125 oC 430 K/W 240 mV 320 mV 400 mV 500 mV 500 mV 1000 mV 2 uA 30 Vv 10 pF 5 ns * \f both diodes are in forward operation at the same moment, total device current max. 110 mA. If one diode is in reverse and the other in forward operation at the same moment, total device current max. 200 mA. ** Temperature coefficient of forward voltage: 0,6%/K at Ip = 1 mA. July 1987 PHILIPSSchottky barrier diode BAT74 DEVELOPMENT SAMPLE DATA 7295211 200 (mA) 100 0 50 100 150 Tamb (C) Fig. 2 Derating curve maximum ambient temperature. M89-1085/CC Ey PHILIPS mee Co