SEMICONDUCTOR TIP31C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES *Complementary to TIP32C. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC IC 3 Pulse ICP 5 IB 1 A 2 W 40 W Tj 150 Tstg -55150 Collector Current A Base Current Collector Power Ta=25 Dissipation Tc=25 PC Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 100 - - V Collector Cut-off Current ICEO VCE=60V, IB=0 - - 0.3 mA Collector Cut-off Current ICES VCE=100V, VEB=0 - - 200 A Emitter Cut-off Current IEBO VBE=5V, IC=0 - - 1 mA VCE=4V, IC=1A 25 - - DC Current Gain hFE VCE=4V, IC=3A 10 - 50 Collector Emitter Sustaining Voltage Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=375mA - - 1.2 V Base-Emitter On Voltage VBE(on) VCE=4V, IC=3A - - 1.8 V 3.0 - - MHz fT Transition Frequency 1997. 8. 13 Revision No : 0 VCE=10V, IC=500mA f=1MHz 1/2 TIP31C 1997. 8. 13 Revision No : 0 2/2