PESD5V0S2BT,215 - NEXPERIA - Datasheet.Directory

PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

23 August 2018 Product data sheet

1. General description

Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two data

lines from the damage caused by ESD and other transients.

2. Features and benefits

•Bidirectional ESD protection of two lines

•Low diode capacitance

•Max. peak pulse power: PPPM = 130 W at tp = 8/20 µs

•Low clamping voltage: VCL = 14 V at IPPM = 12 A

•Ultra low leakage current: IRM = 5 nA at VRWM = 5 V

•ESD protection up to 30 kV

•IEC 61000-4-2; level 4 (ESD)

•IEC 61000-4-5 (surge); IPPM = 12 A at tp = 8/20 µs

•AEC-Q101 qualified

3. Applications

•Cellular handsets and accessories

•Portable electronics

•Computers and peripherals

•Communication systems

•Audio and video equipment

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff

voltage

Tamb = 25 °C - - 5 V

Cddiode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 35 45 pF

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K1 cathode 1

2 K2 cathode 2

3 K double cathode

1 2

TO-236AB (SOT23)

sym031

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PESD5V0S2BT TO-236AB plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9

mm x 1.3 mm x 1 mm body

SOT23

7. Marking

Table 4. Marking codes

Type number Marking code[1]

PESD5V0S2BT %G5

[1] % = placeholder for manufacturing site code

Product data sheet 23 August 2018 2 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPPM rated peak pulse power [1] [2] - 130 W

IPPM rated peak pulse current

tp = 8/20 µs

[1] [2] - 12 A

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

ESD maximum ratings

IEC 61000-4-2 (contact discharge) [3] [2] - 30 kVVESD electrostatic discharge

voltage MIL-STD-883 (human body model) - 10 kV

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform.

[2] Measured from pin 1 to 3 or pin 2 to 3.

[3] Device stressed with ten non-repetitive ESD pulses.

t (µs)

0 403010 20

001aaa630

120

IPP

(%)

e-t

100 % IPP; 8 µs

50 % IPP; 20 µs

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

001aaa631

IPP

100 %

90 %

30 ns

60 ns

10 %

tr = 0.6 ns to 1 ns

Fig. 2. ESD pulse waveform according to IEC

61000-4-2

Product data sheet 23 August 2018 3 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff

voltage

Tamb = 25 °C - - 5 V

VBR breakdown voltage IR = 1 mA; Tamb = 25 °C 5.5 - 9.5 V

IRM reverse leakage current VRWM = 5 V; Tamb = 25 °C - 5 100 nA

Cddiode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 35 45 pF

IPP = 1 A; Tamb = 25 °C [1] [2] - - 10 VVCL clamping voltage

IPPM = 12 A; Tamb = 25 °C [1] [2] - - 14 V

rdif differential resistance IR = 1 mA; Tamb = 25 °C - - 50 Ω

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform.

[2] Measured from pin 1 to 3 or pin 2 to 3.

001aaa632

tp (µs)

1 104

103

10 102

102

103

PPP

(W)

Tamb = 25 °C

tp = 8/20 µs exponential decay waveform

Fig. 3. Peak pulse power dissipation as a function of

pulse duration; typical values

Tj (°C)

0 20015050 100

001aaa633

0.4

0.8

1.2

PPP

PPP(25°C)

Fig. 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

Product data sheet 23 August 2018 4 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

VR (V)

0 542 31

001aaa634

(pF)

Tamb = 25 °C ; f = 1 MHz

Fig. 5. Diode capacitance as a function of reverse

voltage; typical values

001aaa635

Tj (°C)

75 150125100

102

10- 1

IR(85 °C)

IR < 1 nA measured at Tamb = 25 °C

Fig. 6. Relative variation of reverse current as a

function of junction temperature; typical values

Product data sheet 23 August 2018 5 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

aaa-028860

50 Ω

PESD5V0S2BT

vertical scale = 200 V/div

horizontal scale = 50 ns/div

unclamped +1 kV ESD voltage waveform

(IEC61000-4-2 network)

clamped +1 kV ESD voltage waveform

(IEC61000-4-2 network)

unclamped -1 kV ESD voltage waveform

(IEC61000-4-2 network)

clamped -1 kV ESD voltage waveform

(IEC61000-4-2 network)

vertical scale = 10 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 10 V/div

horizontal scale = 50 ns/div

GND

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

40 dB

ATTENUATOR

Fig. 7. ESD clamping test setup and waveforms

Product data sheet 23 August 2018 6 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

10. Application information

The PESD5V0S2BT is designed for the bidirectional protection of two lines from the damage

caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD5V0S2BT may be used

on line where the signal polarities are both, positive and negative with respect to ground. The

PESD5V0S2BT provides a surge capability of 130 W per line for an 8/20 µs waveform.

001aaa636

PESD5V0S2BT

GND

line 2 to be protected

line 1 to be protected

Fig. 8. Typical application for bidirectional protection of two lines line

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge

transients. The following guidelines are recommended:

1. Place the PESD5V0S2BT as close to the input terminal or connector as possible.

2. Minimize the path length between the PESD5V0S2BT and the protected line.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

Product data sheet 23 August 2018 7 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

12. Package outline

18-03-12Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

1 2

Fig. 9. Package outline TO-236AB (SOT23)

13. Soldering

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

Fig. 10. Reflow soldering footprint for TO-236AB (SOT23)

Product data sheet 23 August 2018 8 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Fig. 11. Wave soldering footprint for TO-236AB (SOT23)

Product data sheet 23 August 2018 9 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

14. Revision history

Table 7. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PESD5V0S2BT_v.4 20180823 Product data sheet - PESD5V0S2BT_v.3

Modifications •AEC-Q101 qualification added.

•Limiting values; Tamb updated to -55°C.

•Application information: updated.

•The format of this data sheet has been redesigned to comply with the identity guidelines of

Nexperia.

•Legal texts have been adapted to the new company name where appropriate.

PESD5V0S2BT_v.3 20090209 Product data sheet - PESD5V0S2BT_v.2

PESD5V0S2BT_v.2 20040527 Product data sheet - PESD5V0S2BT_v.1

PESD5V0S2BT_v.1 20040517 Product data sheet - -

Product data sheet 23 August 2018 10 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

15. Legal information

Data sheet status

Document status

[1][2]

Product

status [3]

Definition

Objective [short]

data sheet

Development This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification This document contains data from

the preliminary specification.

Product [short]

data sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Product data sheet 23 August 2018 11 / 12

Nexperia PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

Contents

1. General description...................................................... 1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 3

9. Characteristics.............................................................. 4

10. Application information............................................. 7

11. Test information.......................................................... 7

12. Package outline.......................................................... 8

13. Soldering..................................................................... 8

14. Revision history........................................................10

15. Legal information......................................................11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 23 August 2018

Product data sheet 23 August 2018 12 / 12