© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1Publication Order Number:
MMBT6428LT1/D
MMBT6428LT1G,
MMBT6429LT1G
Amplifier Transistors
NPN Silicon
Features
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol 6428LT1 6429LT1 Unit
Collector −Emitter Voltage VCEO 50 45 Vdc
Collector −Base Voltage VCBO 60 55 Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC200 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION
MMBT6428LT1G SOT−23
(Pb−Free)
3000 Tape & Reel
MMBT6429LT1G SOT−23
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
3
1
XXX MG
G
XXX = Specific Device Code
MMBT6428LT1 − 1KM
MMBT6429LT1 − M1L
M = Date Code*
G= Pb−Free Package
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBT6428LT1G, MMBT6429LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) MMBT6428
(IC = 1.0 mAdc, IB = 0) MMBT6429
V(BR)CEO
50
45
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) MMBT6428
(IC = 0.1 mAdc, IE = 0) MMBT6429
V(BR)CBO
60
55
−
−
Vdc
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
−0.1
mAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
−0.01
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−0.01
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429
(IC = 0.1 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429
hFE
250
500
250
500
250
500
250
500
−
−
650
1250
−
−
−
−
−
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
−
0.2
0.6
Vdc
Base −Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
VBE(on)
0.56 0.66
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
100 700
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−3.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−8.0
pF
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MMBT6428LT1G, MMBT6429LT1G
http://onsemi.com
3
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
IC, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (OHMS)
3.0
10
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
en, NOISE VOLTAGE (nV)
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
IC = 10 mA
300 mA
30 mA
RS ≈ 0
3.0 mA
1.0 mA 7.0
10
20
30
5.0
3.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
RS ≈ 0
f = 10 Hz
100 Hz
1.0 kHz
10 kHz
100 kHz
IC = 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
10 mA
RS ≈ 0
10
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
IC = 1.0 mA
500 mA
100 mA
10 mA
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
RS, SOURCE RESISTANCE (OHMS)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
VT, TOTAL NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz IC = 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
IC = 10 mA
300 mA
100 mA
30 mA
3.0 mA
1.0 mA
10 mA
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
MMBT6428LT1G, MMBT6429LT1G
http://onsemi.com
4
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.4
1.0
2.0
3.0
4.0
0.3
0.01
h , DC CURRENT GAIN (NORMALIZED)
0.05 2.0 3.0 100.02 0.03
0.2
1.00.1 5.0
FE
VCE = 5.0 V
TA = 125°C
25°C
-55°C
0.7
0.5
0.50.2 0.3
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 9. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0.01
0
-0.8
-1.2
-1.6
-2.4
TJ = 25°C
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
TJ = 25°C to 125°C
-55°C to 25°C
RVBE, BASE-EMITTER
θ
TEMPERATURE COEFFICIENT (mV/ C)°
-0.4
-2.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
fT
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
8.0
0.8
1.0
2.0
3.0
4.0
6.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
TJ = 25°C
Ccb
Cob Ceb Cib
1.0 2.0 5.03.0 7.0 10 20 30 50 70 100
500
300
200
70
50
100
VCE = 5.0 V
TJ = 25°C
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
MMBT6428LT1G, MMBT6429LT1G
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO236)
CASE 318−08
ISSUE AN
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD
318−08.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
MMBT6428LT1/D
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
