SFH 4200
SFH 4205
Schn el le Ga As -IR-Lumine s ze nzdiode (950 nm )
High-Speed GaAs Infrared Emitter (950 nm)
SFH 4200 SFH 4205
2001-04-19 1
Wesentliche Merkmale
• GaAs-LED mit sehr hohem Wirkungsgrad
• Gleichstrom- (mit Modulation) oder
Impulsbetrieb möglich
• Hohe Zuverlässigkeit
• Hohe Impulsbelastbarkeit
• Sehr kurze Schaltzeiten (10 ns)
• Für Oberflächenmontage geeignet
• Gegurtet lieferbar
• SFH 4200 Gehäusegleich mit SFH 320
SFH 4205 Gehäusegleich mit SFH 325
• SFH 4205: Nur für IR-Reflow-Lötung geeign et.
Anwendungen
• Schnelle Datenübertragung mit
Übertragungsraten bis 100 Mbaud
(IR Tastatur, Joystick , Multimed ia)
• Analoge und digitale Hi-Fi Audio- und
Videosignalübertragung
• Batteriebetriebene Geräte (geringe
Stromaufnahme)
• Anwendungen mit hohen
Zuverlässigkeitsansprüchen bzw. erhöhten
Anforderungen
• Alarm- und Sicherungssysteme
• IR Freiraumübertragung
Features
• Very highly efficient GaAs-LED
• DC (with modulation) or pulsed operations are
possible
• High reliability
• High pulse handling capability
• Very short switching times (10 ns)
• Suitable for surface mounting (SMT)
• Available on tape and reel
• SFH 4200 same package as SFH 320
SFH 4205 same package as SFH 325
• SFH 4205: Suitable only for IR-reflow
soldering.
Applications
• High data transmission rate up to 100 Mbaud
(IR keyboard, Joystick, Multimedia)
• Analog and digi tal Hi-Fi audi o an d vi deo s ignal
transmission
• Low power consumption (battery) equipment
• Suitable for professional and high-reliability
applications
• Alarm and safety equipment
• IR free air transmission
2001-04-19 2
SFH 4200, SFH 4205
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 4200
SFH 4205 Q62702-P978
Q62702-P5165
Kathodenkennzeichnung: abgesetzte Ecke
Cathode marking: bevelled edge
TOPLED
SIDELED
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR3V
Durchlaßstrom
Forward current IF (DC) 100 mA
Stoßstrom, tp = 10 µs, D = 0
Surge current IFSM 2.2 A
Verlustleistung
Power dissipation Ptot 180 mW
Wärmewiderstand Sperrschic ht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
450
200
K/W
K/W
SFH 4200, SFH 4205
2001-04-19 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
∆λ 40 nm
Abstrahlwinkel
Half angle ϕ± 60 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area L×B
L×W0.3 ×0.3 mm
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Ω
tr, tf10 ns
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.5 (≤ 1.8)
3.2 (≤ 4.0) V
V
Sperrstrom,
Reverse current
VR = 3 V
IR0.01 (≤ 10) µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe28 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe, IF = 100 mA
TCI– 0.44 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.2 nm/K
2001-04-19 4
SFH 4200, SFH 4205
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min.
Ie typ.
4
8.5 mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ. 55 mW/sr
SFH 4200, SFH 4205
2001-04-19 5
Relati ve Sp ectral Emissio n
Irel = f (λ)
Forward Curr e nt IF = f (VF)
single pu ls e, tp = 20 µs
Radiation Characteristics Irel = f (ϕ
OHF00777
nm800
Ιerel
λ
0
850 900 950 1000 1100
20
40
60
80
100
OHF00784
10
-3
V
mA
0
Ι
F
V
F
0.5 1 1.5 2 2.5 3 3.5 4.5
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚ OHL01660
50˚
60˚
70˚
80˚
90˚
100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Handl i ng
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
Ie
Ie 100 mA = f (IF)
e
e (100 mA)
mA
OHF00809
F
Ι
ΙΙ
10 40
10 10 110 23
10
10-3
10-2
10
10-1
0
102
OHF00040
10
-5
F
I
T
P
t
=
D
P
t
T
p
t
F
I
0.005
0.01
0.02
0.05
D
10
-4
10
-3
10
-2
10
-1
10
0
10
1 2
10s
0.1
0.2
0.5
1
=
-1
10
5
1
10
10
0
5
A
Max. Permissible Forward Current
IF = f (TA)
OHF00359
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thJA
= 375 K/W
2001-04-19 6
SFH 4200, SFH 4205
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inc h) / Dim ensions are specif ied as follows: mm (inc h)
SFH 4200
GPLY6724
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Cathode marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
SFH 4205
GPLY6880
(R1)
Cathode marking
Cathode Anode
(2.4 (0.094))
2.8 (0.110)
2.4 (0.094)
4.2 (0.165)
3.8 (0.150)
0.9 (0.035)
1.1 (0.043)
spacing
2.54 (0.100)
0.7 (0.028)
(2.85 (0.112))
(1.4 (0.055))
(0.3 (0.012))
3.4 (0.134)
3.8 (0.150)
3.8 (0.150)
4.2 (0.165)
(2.9 (0.114))
SFH 4200, SFH 4205
2001-04-19 7
Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage.
For addi tio nal information on general soldering co ndit ions please conta ct us.
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describes the type of component and shall not be considered as assured c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If they fail , it is rea so nable to assume th at the health of the user may be endangered.
Löthinweise
Soldering Conditions
Bauform
Types Tauch-, Schwall- und Schlepplötung
Dip, Wave and Drag Soldering Reflowlötung
Reflow Soldering
Lötbadtemperatur
Temperature of
the Soldering Bath
Maximal zulässige
Lötzeit
Max. Perm.
Soldering Time
Lötzonen-
temperatur
Temperature of
Soldering Zone
Maximale
Durchlaufzeit
Max. Transit Time
TOPLED
SIDELED
260 °C
–
10 s
–
245 °C
245 °C
10 s
10 s
