Power Transistors 2N1120 (GerRMANiuM) Neo ev 2N1120 JAN AVAILABLE P, = 90W PNP germanium power transistors for military and industrial power applications. MAXIMUM RATINGS Rating Symbol 2N117120 Unit Collector-Emitter Voltage Voro 40 Vde Collector-Emitter Voltage Vors 70 Vde Collector-Base Voltage Vos 80 Vdc Emitter-Base Voltage Ves 40 Vde Emitter Current I, 15 Adc Total Device Dissipation @ Ty = 25C Py 90 Watts Derate above 25C 1.2 w/c Operating Junction Temperature Range T, -65 to +100 c THERMAL CHARACTERISTICS Characteristic Symbol Max Unit c/w Thermal Resistance, Junction to Case 95 0.8 100 90 80 POWER-TEMPERATURE DERATING CURVE 60 40 Pp: Power Dissipation (Watts) 20 10 0 20 40 60 80 100 Toe Case Temperature Cc) 7-51