To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006 Features * Low on-resistance RDS (on) = 4.6 m typ. * Low drive current * 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 4 1 1 2 1. Gate 2. Drain 3. Source 4. Drain 2 3 3 H7N0307LD H7N0307LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) D 4 G 1 2 3 H7N0307LM Rev.7.00 Apr 07, 2006 page 1 of 7 S H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Symbol VDSS Value 30 Unit V VGSS ID 20 60 V A 240 60 A A Pch ch-c 90 1.39 W C/W Channel to ambient thermal impedance Channel temperature ch-a Tch 89 150 C/W C Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Tstg -55 to +150 C Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel to case thermal impedance Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 30 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS 20 -- -- -- -- 10 V A IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 IDSS -- 1.0 -- -- 10 2.5 A V VDS = 30 V, VGS = 0 Note 3 ID = 1 mA, VDS = 10 V RDS (on) -- -- 4.6 8.0 5.8 11.5 m m ID = 30 A, VGS = 10 V Note 3 ID = 30 A, VGS = 4.5 V Forward transfer admittance Input capacitance |yfs| Ciss 40 -- 65 2500 -- -- S pF Output capacitance Reverse transfer capacitance Coss Crss -- -- 650 350 -- -- pF pF ID = 30 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Gate to source charge Qg Qgs -- -- 40 7 -- -- nC nC Gate to drain charge Turn-on delay time Qgd td (on) -- -- 8 20 -- -- nC ns Rise time Turn-off delay time tr td (off) -- -- 300 70 -- -- ns ns Fall time Body to drain diode forward voltage tf VDF -- -- 20 0.92 -- -- ns V trr -- 60 -- ns Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Body to drain diode reverse recovery time Note: 3. Pulse test Rev.7.00 Apr 07, 2006 page 2 of 7 VGS (off) Note 3 VDD = 10 V VGS = 10 V ID = 60 A VGS = 10 V, ID = 30 A RL = 0.33 Rg = 4.7 IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF/dt = 50 A/s Note 3 H7N0307LD, H7N0307LS, H7N0307LM Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area (A) 500 ID 120 Drain Current Channel Dissipation Pch (W) 160 80 40 10 1m 100 DC 0 50 100 150 Case Temperature on = 10 ms Operation in this area is limited by RDS (on) 1 0.1 0.01 0.1 200 Tc (C) 3 10 30 100 VDS (V) 50 10 V VDS = 10 V Pulse Test 3.5 V Pulse Test 4.5 V 40 1 Typical Transfer Characteristics ID (A) 50 0.3 Drain to Source Voltage Typical Output Characteristics ID (A) PW ati s Tc = 25C 1 shot Pulse 0 30 40 30 20 Drain Current Drain Current Op er 10 s 100 s 3V 10 25C 20 Tc = 75C -25C 10 VGS = 2.5 V 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 VDS (V) 0.16 0.12 0.08 ID = 10 A 0.04 5A 2A 0 0 4 8 12 Gate to Source Voltage Rev.7.00 Apr 07, 2006 page 3 of 7 16 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (m) Drain to Source Saturation Voltage VDS(on) (V) Pulse Test 2 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.20 1 100 Pulse Test 50 20 VGS = 4.5 V 10 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (m) H7N0307LD, H7N0307LS, H7N0307LM 20 Pulse Test 16 ID = 2 A, 5 A, 10 A 12 VGS = 4.5 V 8 2 A, 5 A, 10 A 4 10 V 0 -40 0 40 80 Case Temperature 120 Tc 160 100 Tc = -25C 30 75C 10 25C 3 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 500 3000 Capacitance C (pF) Reverse Recovery Time trr (ns) 10000 200 100 50 Coss 300 Crss 100 1 3 10 30 100 0 8 10 4 VDD = 25 V 10 V 5V 0 20 40 Gate Charge Rev.7.00 Apr 07, 2006 page 4 of 7 60 80 Qg (nc) 30 40 50 0 100 VGS (V) 500 Switching Time t (ns) VDD = 25 V 10 V 12 5V Gate to Source Voltage (V) VDS Drain to Source Voltage 16 20 20 Switching Characteristics VGS VDS 10 Drain to Source Voltage VDS (V) IDR (A) 20 0 VGS = 0 f = 1 MHz 10 0.3 ID = 60 A 30 100 1000 Dynamic Input Characteristics 40 30 Ciss 30 di / dt = 50 A / s VGS = 0, Ta = 25C Reverse Drain Current 50 10 Typical Capacitance vs. Drain to Source Voltage 1000 10 0.1 3 Drain Current ID (A) (C) Body to Drain Diode Reverse Recovery Time 20 1 0.3 200 100 tr td(off) 50 td(on) 20 tf 10 VGS = 10 V, VDS = 10 V Rg = 4.7 , duty 1 % 5 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 H7N0307LD, H7N0307LS, H7N0307LM Reverse Drain Current vs. Souece to Drain Voltage Reverse Drain Current IDR (A) 100 80 10 V 60 VGS = 0 5V 40 20 Pulse Test 0 0 0.4 0.8 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c (t) = s (t) * ch - c ch - c = 1.38C/W, Tc = 25C 0.1 0.05 0.02 0.03 PDM 1 e 0.0 puls t ho 1s D= PW T PW T 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Rg Vin Vout Vin 10 V VDS = 10 V 10% 10% 90% td(on) Rev.7.00 Apr 07, 2006 page 5 of 7 10% RL tr 90% td(off) tf H7N0307LD, H7N0307LS, H7N0307LM Package Dimensions RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g 4.44 0.2 1.3 0.15 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B 2.49 0.2 11.0 0.5 0.2 0.86 +- 0.1 Package Name LDPAK(S)-(1) Unit: mm 10.2 0.3 8.6 0.3 11.3 0.5 0.3 10.0 +- 0.5 Previous Code LDPAK(L) / LDPAK(L)V Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 0.1 MASS[Typ.] 1.30g (1.5) 10.0 Rev.7.00 Apr 07, 2006 page 6 of 7 2.54 0.5 0.4 0.1 0.3 3.0 +- 0.5 2.54 0.5 0.2 0.86 +- 0.1 7.8 7.0 2.49 0.2 0.2 0.1 +- 0.1 1.37 0.2 1.3 0.2 7.8 6.6 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 Unit: mm 1.7 JEITA Package Code (1.4) Package Name LDPAK(L) 2.2 H7N0307LD, H7N0307LS, H7N0307LM JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g 7.8 6.6 (2.3) 10.0 2.49 0.2 7.8 7.0 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(2) 0.2 0.1 +- 0.1 2.2 1.37 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.4 0.1 0.3 5.0 +- 0.5 1.3 0.2 Ordering Information Part Name H7N0307LD-E H7N0307LSTL-E Quantity 500 pcs 1000 pcs Shipping Container Box (Conductive Sack) Taping H7N0307LMTL-E 1000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.7.00 Apr 07, 2006 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. 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