F5D1/2/3 AlGaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS 0.209 (5.31) * The F5D series is a 880 nm LED in a 0.184 (4.67) narrow angle, TO-46 package. 0.030 (0.76) NOM 0.255 (6.48) FEATURES * Good optical to mechanical alignment 1.00 (25.4) MIN * Mechanically and wavelength matched ANODE (CASE) SCHEMATIC to the TO-18 series phototransistor * Hermetically sealed package 0.100 (2.54) ANODE (Connected To Case) * High irradiance level 0.050 (1.27) CATHODE 1 3 1 3 0.040 (1.02) 1. Derate power dissipation linearly 1.70 mW/C above 25C ambient. 2. Derate power dissipation linearly 13.0 mW/C above 25C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16" (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians. O0.020 (0.51) 2X 0.040 (1.02) 45 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 10s; 100Hz) Forward Current (pw, 1s; 200Hz) Reverse Voltage Power Dissipation (TA = 25C)(1) Power Dissipation (TC = 25C)(2) Symbol TOPR TSTG TSOL-I TSOL-F IF IF IF VR PD PD ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power F5D1(7) Total Power F5D2(7) Total Power F5D3(7) Rise Time 0-90% of output Fall Time 100-10% of output Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 3 10 3 170 1.3 Unit C C C C mA A A V mW W (TA =25C) (All measurements made under pulse conditions) TEST CONDITIONS SYMBOL MIN TYP MAX UNITS IF = 100 mA IF = 100 mA IF = 100 mA VR = 3 V IF = 100 mA IF = 100 mA IF = 100 mA "P # VF IR PO PO PO tr tf -- -- -- -- 12.0 9.0 10.5 -- -- 880 8 -- -- -- -- -- 1.5 1.5 -- -- 1.7 10 -- -- -- -- -- nm Deg. V A mW mW mW s s 2001 Fairchild Semiconductor Corporation DS300286 4/24/01 1 OF 3 www.fairchildsemi.com F5D1/2/3 AlGaAs INFRARED EMITTING DIODE Figure 1. Power Output vs. Input Current Figure 2. Power Output vs. Temperature 20 PO, NORMALIZED POWER OUTPUT PO, NORMALIZED POWER OUTPUT 10 1.0 0.1 NORMALIZED TO I F = 100 mA TA = 25C 0.01 PULSED INPUTS PW = 80 sec RR = 30 Hz 0.001 1 10 100 IF = 1 A 10 8 6 4 2 IF = 100 mA 1 0.8 0.6 0.4 0.2 NORMALIZED TO I F = 100 mA, TA = 25C PW = 80 sec, f = 30 Hz 0.1 -25 1000 0 25 IF, INPUT CURRENT (mA) Figure 3. Forward Voltage vs. Temperature PO, RELATIVE OUTPUT (%) VF, FORWARD VOLTAGE (volts) 2 IF = 100 mA IF = 10 mA 50 25 125 150 Figure 4. Typical Radiation Pattern IF = 0.5 A 0 100 100 PW = 80 sec F = 30 Hz IF = 1 A 1 -25 75 , TA, AMBIENT TEMPERATURE (C) 4 3 50 80 F5D 60 40 20 75 100 125 0 150 -80 -60 -20 -40 0 20 40 60 80 100 , DISPLACEMENT FROM OPTICAL AXIS (DEGREES) TA, AMBIENT TEMPERATURE (C) Figure 5. Output vs. Input with L14G Detector Figure 6. Output vs. Wavelength 100 120 10 IL L14G 100 5V PO, RELATIVE OUTPUT (%) IL, OUTPUT CURRENT (mA) IF F5D1 1.0 TYPICAL OUPUTS AT A DISTANCE OF 10 CM PULSED INPUTS, P W = 80 sec RR = 30 Hz 0.1 0.01 10 100 60 700 1000 TYPICAL SPECTRAL RESPONSE OF SILICON PHOTOSENSORS F5D 40 20 IF = 100 mA TA = 25C 800 900 1000 , WAVE LENGTH (nm) IF , INPUT CURRENT (mA) www.fairchildsemi.com 80 2 OF 3 4/24/01 DS300286 F5D1/2/3 AlGaAs INFRARED EMITTING DIODE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. DS300286 4/24/01 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 3 OF 3 www.fairchildsemi.com