PHOTOCOUPLER
PS2502-1,-4,PS2502L-1,-4
HIGH ISOLATION VOLTAGE
DARLINGTON TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES −NEPOC Series−
Document No. PN10226EJ04V0DS (4th edition)
Date Published September 2009 NS The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The PS2502-1, -4 and PS2502L-1, -4 are optically coupled isolators c ontaining a GaAs light emitt ing diode and an
NPN silicon darlington connected phototransistor.
The PS2502-1, -4 are in a plastic DIP (Dual In-line Package) and t he PS2502L-1, -4 are lead bending type (Gull-
wing) for surface mount.
FEATURES
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 2 000% T YP. )
• High-speed switching (tr, tf = 100
µ
s TYP.)
•Ordering number of tape product: PS2502L-1-F3: 2 000 pcs/reel
• Safety standards
• UL approved: No. E72422
APPLICATIONS
• Power supply
• Telephone/FAX
• FA/OA equipment
• Programmable logic controller
<R>
PIN CONNECTION
(Top View)
PS2502-1, PS2502L-1
PS2502-4, PS2502L-4
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
12345678
16 15 14 13 12 11 10 9
Data Sheet PN10226EJ04V0DS
2
PS2502-1,-4,PS2502L-1,-4
PACKAGE DIME NSIONS (UNIT : mm)
DIP Type
PS2502-4
PS2502-1
19.8±0.5
6.5±0.5
3.5±0.3
4.15±0.43.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15°
7.62
0.25
+0.1
–0.05
3.5±0.3
4.15±0.43.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
4.6±0.35
6.5±0.5
0 to 15°
7.62
0.25
+0.1
–0.05
12
43
18
16 9
Lead Bending Type
PS2502L-4
19.8±0.5
6.5±0.5
2.54
1.25±0.15
0.25
M
3.5±0.3
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
PS2502L-1
0.25
M
4.6±0.35
6.5±0.5
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
43
18
16 9
PHOTOCOUPLER CONSTRUCT ION
Parameter Unit (MIN.)
Air Distance 7 mm
Outer Creepage Distance 7 mm
Inner Creepage Distance 3.5 mm
Isolation Distance 0.3 mm
<R>
<R>
Data Sheet PN10226EJ04V0DS 3
PS2502-1,-4,PS2502L-1,-4
MARKING EXAMPLE
2502
NJ931 PS2502-4
NJ931
JJ
PS2502-1 PS2502-4
Assembly Lot
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
No. 1 pin
Mark
Package
New PKG
Made in Japan Made in Taiwan
No. 1 pin
Mark
N
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
New PKG
Made in Japan
931
N931
Country Assembled
Type Number
Assembly Lot
JJ
K
<R>
Data Sheet PN10226EJ04V0DS
4
PS2502-1,-4,PS2502L-1,-4
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification Packing Style Safety Standard
Approval Application Part
Number*1
PS2502-1 PS2502-1-A Pb-Free Magazine case 100 pcs Standard products PS2502-1
PS2502L-1 PS2502L-1-A (UL Approved)
PS2502L-1-F3 PS2502L-1-F3-A Embossed Tape 2 000 pcs/reel
PS2502-4 PS2502-4-A Magazine case 20 pcs PS2502-4
PS2502L-4 PS2502L-4-A
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
PS2502-1,
PS2502L-1 PS2502-4,
PS2502L-4
Diode Reverse Voltage VR6 V
Forward Current (DC) IF80 mA/ch
Power Dissipation Derating
∆
PD/°C 1.5 1.2 mW/°C
Power Dissipation PD150 120 mW/ch
Peak Forward Current*1 IFP 1 A/ch
Transistor Collector to Emitter Voltage VCEO 40 V
Emitter to Collector Voltage VECO 6 V
Collector Current IC200 160 mA/ch
Power Dissipation Derating
∆
PC/°C 2.0 1.6 mW/°C
Power Dissipation PC200 160 mW/ch
Isolation Voltage*2 BV 5 000 Vr.m.s.
Operating Ambient Temperature TA–55 to +100 °C
Storage Temperature Tstg –55 to +150 °C
*1 PW
= 100
µ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 short ed together (PS2502-1, PS2502L-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2502-4, PS2502L-4).
<R>
Data Sheet PN10226EJ04V0DS 5
PS2502-1,-4,PS2502L-1,-4
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.17 1.4 V
Reverse Current IR VR = 5 V 5
µ
A
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 50 pF
Transistor Collector to Emitter Dark
Current ICEO VCE = 40 V, IF = 0 mA 400 nA
Coupled Current Transfer Ratio
(IC/IF)*1 CTR IF = 1 mA, VCE = 2 V 200 2 000 %
Collector Saturation
Voltage VCE(sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF
Rise Time*2 tr VCC = 10 V, IC = 2 mA, RL = 100 Ω100
µ
s
Fall Time*2 tf100
*1 CT R rank (only PS2502-1, PS2502L-1)
K : 2 000 to (%)
L : 700 to 3 400 (%)
M : 200 to 1 000 (%)
*2 Test circuit for switching time
Input
Output
90%
10%
tr
td
tf
ts
ton toff
VCC
VOUT
RL = 100 Ω
50 Ω
IF
Pulse Input
PW = 1 ms
Duty Cycle = 1/10
Data Sheet PN10226EJ04V0DS
6
PS2502-1,-4,PS2502L-1,-4
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherw ise specified)
150
100
50
02550
75 100 125 150
0.5
0.1
1
5
10
50
100
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0
20
40
60
80
100
120
140
160
246810
5 mA
2 mA
1 mA
IF = 0.5 mA
10
1
100
1000
10 000
–50 –25 0 25 50 75 100 0.2
0.5
1
5
10
200
50
0.4
100
0.6 0.8 1.0 1.2 1.4 1.6
5 mA
2 mA
1 mA
0.5 mA
IF = 0.1 mA
0.2 mA
1.5 mW/°C
1.2 mW/°C
PS2502-1
PS2502L-1
PS2502-4
PS2502L-4
0°C
–25°C
–55°C
VCE = 2 V
5 V
10 V
24 V
40 V
+60°C
+25°C
TA = +100°C
Diode Power Dissipation P
D
(mW)
Transistor Power Dissipation P
C
(mW)
Ambient Temperature TA (°C)
Forward Current I
F
(mA)
Forward Voltage VF (V)
Collector Current I
C
(mA)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage VCE(sat) (V)
Ambient Temperature TA (°C)
Ambient Temperature TA (°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA)
150
100
50
02550
75 100 125 150
2 mW/°C
1.6 mW/°C
200
PS2502-4
PS2502L-4
PS2502-1
PS2502L-1
Remark The graphs indicate nominal characteristics.
Data Sheet PN10226EJ04V0DS 7
PS2502-1,-4,PS2502L-1,-4
1.4
25
1.2
1.0
0.8
0.6
0.4
0.2
–50 0–25 50 75 100
8 000
0
1 000
2 000
3 000
4 000
5 000
6 000
7 000
V
CE
= 2 V
0.1 0.5 1 5 10 30
1 000
500
100
50
10
5
2100
50 500 1 k 5 k
VCC = 5 V,
IC = 2 mA,
CTR = 2 280 %
tf
500
50
1 k300
10
100
1 000
5 000
10 000
5 k 10 k 50 k 510
0.2 0.5 1 2 20 50 100 200
I
F
= 1 mA,
V
CE
= 2 V
–20
–15
–10
–5
0
1 500
2 000
2 500
3 000
0
500
1 000
VCE = 2 V
50 10010 500
R
L
= 100 Ω
VCC = 5 V,
IF = 1 mA,
CTR = 2 280 %
td
ts
30
500 100 k
tf
ts
tr
td
tr
Normalized to 1.0
at TA = 25°C,
IF = 1 mA, VCE = 2 V
Forward Current I
F
(mA)
Ambient Temperature T
A
(°C)
Load Resistance R
L
(Ω)
Frequency f (kHz)
Normalized Current Transfer Ratio CTR
Current Transfer Ratio CTR (%)
Normalized Gain G
V
Load Resistance R
L
(Ω)
Switching Time t ( s)
µ
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE FREQUENCY RESPONSE
Switching Time t ( s)
µ
Forward Current I
F
( A)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
µ
Sample A
B
C
D
Sample A
B
C
D
Remark The graphs indicate nominal characteristics.
Data Sheet PN10226EJ04V0DS
8
PS2502-1,-4,PS2502L-1,-4
10 10
2
10
3
10
4
10
5
10
6
0.6
0
0.2
0.4
0.8
1.0
1.2
T
A
= 25
°
C
T
A
= 60
°
C
Time (Hr)
CTR (Relative Value)
LONG TERM CTR DEGRADATION
I
F
= 1 mA
Remark T he graph indicat es nominal characteristics.
Data Sheet PN10226EJ04V0DS 9
PS2502-1,-4,PS2502L-1,-4
TAPING SPECI F I CATIONS (UNIT : mm)
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
PS2502L-1-F3
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
φ
Packing: 2 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
100±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
<R>
Data Sheet PN10226EJ04V0DS
10
PS2502-1,-4,PS2502L-1,-4
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• T ime of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlo rine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
•Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• F lux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iro n
• Peak temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less
• F lux Rosin flux containing small amount of chlo rine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Data Sheet PN10226EJ04V0DS 11
PS2502-1,-4,PS2502L-1,-4
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum rati ngs.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting v alues before use, since the forward current conditions at CT R measurement differ according
to prod uct.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
PS2502-1,-4,PS2502L-1,-4
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
•Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
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not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express,
implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
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