2002. 7. 10 1/4
SEMICONDUCTOR
TECHNICAL DATA KRC860U~KRC864U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A1
1.3 0.1A1
5
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
4. Q EMITTER
3. Q COLLECTOR
5. Q BASE
6. Q COLLECTOR
1
2
2. Q BASE
1
1
2
2
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
C
E
B
Type Name
123
654
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC100 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC *200 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
Input Resistor
KRC860U
R1
- 4.7 -
k
KRC861U - 10 -
KRC862U - 100 -
KRC863U - 22 -
KRC864U - 47 -
TYPE KRC860U KRC861U KRC862U KRC863U KRC864U
MARK NK NM NN NO NP
ELECTRICAL CHARACTERISTICS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
1
Q1
23
65 4
Q2
Marking
Note : * Characteristic of Transistor Only.
* Total Rating.
2002. 7. 10 2/4
KRC860U~KRC864U
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise Time
KRC860U
tr
VO=5V
VIN=5V
RL=1k
- 0.025 -
S
KRC861U - 0.03 -
KRC862U - 0.3 -
KRC863U - 0.06 -
KRC864U - 0.11 -
Storage Time
KRC860U
tstg
- 3.0 -
KRC861U - 2.0 -
KRC862U - 6.0 -
KRC863U - 4.0 -
KRC864U - 5.0 -
Fall Time
KRC860U
tf
- 0.2 -
KRC861U - 0.12 -
KRC862U - 2.0 -
KRC863U - 0.9 -
KRC864U - 1.4 -
2002. 7. 10 3/4
KRC860U~KRC864U
Revision No : 3
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
0.1
FE
300
0.3 1 3
2k
h - I
FE C
C
10 30 100
10
30
50
100
500
1k
Ta=100 C
Ta=25 C
Ta=-25 C
V =5V
CE
0.3
COLLECTOR CURRENT I (mA)
0.1
DC CURRENT GAIN hFE
100
30
50
10
300
500
1k
2k
V =5V
1031
Ta=100 C
Ta=25 C
Ta=-25 C
CE
10030
C
h - I
FE C
DC CURRENT GAIN h
COLLECTOR CURRENT I (mA)
0.3
10
0.1
50
30
100
10
V =5V
Ta=-25 C
1
CE
3 10030
C
FE
1k
500
300
2k
Ta=25 C
Ta=100 C
h - I CFE
KRC860U
KRC861U
KRC862U
KRC860U
0.3
COLLECTOR CURRENT I (mA)
0.1
COLLECTOR-EMITTER SATURATIN
CE(sat)
0.1
0.05
0.03
0.01
1
0.5
0.3
2
I /I =20
1031
Ta=-25 C
Ta=25 C
Ta=100 C
C
10030
C
V - I
CE(sat) C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATIN
I /I =20
Ta=-25 C
Ta=100 C
0.30.1
0.3
0.5
0.01
0.03
0.05
0.1
VOLTAGE V (V)
CE(sat)
1
C
1310
Ta=25 C
KRC861U
2
CE(sat)
V - I C
30 100
C
B
B
CE(sat)
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
COLLECTOR CURRENT I (mA)
Ta=100 C
0.3
Ta=-25 C
0.1
0.05
0.03
0.01
0.1 1
Ta=25 C
3 10 10030
C
I /I =20
KRC862U
0.5
0.3
1
2
BC
V - I
CE(sat) C
2002. 7. 10 4/4
KRC860U~KRC864U
Revision No : 3
DC CURRENT GAIN h
COLLECTOR CURRENT I (mA)
0.3
10
0.1
50
30
100
10
V =5V
Ta=-25 C
1
CE
310030
C
FE
1k
500
300
2k
Ta=25 C
Ta=100 C
h - IC
FE
KRC863U
CE(sat)
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
COLLECTOR CURRENT I (mA)
Ta=100 C
0.3
Ta=-25 C
0.1
0.05
0.03
0.01
0.1 1
Ta=25 C
310 10030
C
I /I =20
KRC863U
0.5
0.3
1
2
BC
V - I
CE(sat) C
DC CURRENT GAIN h
COLLECTOR CURRENT I (mA)
0.3
10
0.1
50
30
100
10
V =5V
Ta=-25 C
1
CE
310030
C
FE
1k
500
300
2k
Ta=25 C
Ta=100 C
h - I CFE
KRC864U
CE(sat)
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
COLLECTOR CURRENT I (mA)
Ta=100 C
0.3
Ta=-25 C
0.1
0.05
0.03
0.01
0.1 1
Ta=25 C
310 10030
C
I /I =20
KRC864U
0.5
0.3
1
2
BC
V - I
CE(sat) C
