BES , SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 variant envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC327, BC327A, BC328 are complementary to the BC337, BC337A and BC338 respectively. QUICK REFERENCE DATA BC327 | BC327A |BC328 Collector-emitter voltage (VggE = 0) --VcES max. 50 60 30 V Collector-emitter voltage (open base) VCEQ max. 45 60 25 V Collector current (peak value) lIcom max. 1000 mA Total power dissipation up to Tapp = 25 OC Prot max. 800 mW Junction temperature Tj max. 150 o Transition frequency at f = 35 MHz Ic=10mA;-Vcp=5V tT typ. 100 MHz D.C. current gain ~lc = 100 mA;-VcE=1V hFE 100 to 600 MECHANICAL DATA Dimensions in mm Fig. 1 TO-92 variant. 3 CI ~ You0 2 . Qe __ fmin + 5,2max > )-<+____+____ 12,7 min. ___ | tf ! 0,49 rT }max 0,67 ma _J max x ee, 7 7Z270994.2 diameter within 2,5 max TS-uncontrolled ~ _ ae ~ | (sn 1987 101BC327 BC327A BC328 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VgeE = 0) Collector-emitter voltage (open base) Ic= 10mA Emitter-base voltage (open collector) Collector current (d.c.) Collector current (peak value) Emitter current (peak value) Base current (d.c.) Base current (peak value) Total power dissipation at Tamb = 25 OC UP tO Tamb = 25 OC Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient in free air From junction to ambient max. max. max, max. max. max. max. max. max. max. max. BC327 | BC327A | BC328 50 60 45 60 5 5 500 1000 1000 100 200 625 800 65 to +150 150 0,2 0,156 30 25 5 Vv V Vv mA mA mA mA mA mW mW * oC oC K/mW K/mW* * Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for collector lead min. 10 mm x 10mm. 102 August 1002) ( aSilicon planar epitaxial transistors CHARACTERISTICS Tj = 25 OC unless otherwise specified Collector cut-off current le = 0; Vcp = 20 V; Tj = 259C le = 0; ~Veg = 20 V; Tj = 150 C Emitter cut-off current Ic =0;-Vep=5V Base emitter voltage* Ic = 500 mA; -Vcp=HlV Saturation voltage I = 500 mA; ig =50mA D.C. current gain !c = 500 mA; ~-Vce=1V I = 100 MA; ~VeE = 1 V; BC327; BC328 BC327A BC327-16 | BC328-16 | BC327-25 | BC328-25 | BC327-40 BC328-40 Transition frequency at f = 35 MHz lc = 10 mA; -Vecp=5V Collector capacitance at f = 1 MHz le = 1e=0;-Vcp=10V *-Vpe decreases by about 2 mV/K with increasing temperature, ICBO --ICBO --lEBO -VBE VCEsat eee a < 100 nA < 5 uA < 10 pA A\ 1,2 V < 700 mV > 40 100 to 600 100 to 400 100 to 250 160 to 400 250 to 600 typ. 100 MHz typ. 8 pF | (ces 1984 103BC327 BC327A BC328 7Z67342 100 Prot max (%) 75 50 25 0 0 50 100 150 Tamb (C) Fig. 2. 7260065! 107 2th j-a (C/W) t Pp bao 103 10 1 1073 1072 1074 1 10 102 ty (s) 103 Fig. 3. 104 August exo) aa ae BC327 Silicon planar epitaxial transistors BC327A BC328 600 7272893.1 16 . 7Z623819.2P -le me (mA) {mA} | 12 400 | 8 t | 200 4 0 Q Q 0,4 0,8 1,2 0 0,5 Vee (Vv) Vege (Vv) Fig. 4 VcE=1V; Tj = 25 9C; typical values. Fig.5 -Vce=5V,;T)=25 OC: typical values. 7ZE2818.1P a5 Vesat {V) 0,4 0,3 0,2 0,1 1 10 100 1000 Fig.6 Ic/lg = 10; Tj = 25 OC; typical values. Ae July 1987 105BC327 BC327A BC328 7260665 300 Veer Vv T)=25C hee 200 Fig. 7. 7Z60670 400 VV e* SV fy f235MHz (MHz) T)=25C 300 200 Fig. 8. am Avi ment ooo f