© 2008 Microchip Technology Inc. DS21984E-page 1
MCP73831/2
Features
Linear Charge Management Controller:
- Integrated Pass Transistor
- Integrated Current Sense
- Reverse Discharge Protection
High Accuracy Preset Voltage Regulation: + 0.75%
Four Voltage Regulation Options:
- 4.20V, 4.35V, 4.40V, 4.50V
Programmable Charge Current: 15 mA to 500 mA
Selectable Preconditioning:
- 10%, 20%, 40%, or Disable
Selectable End-of-Charge Control:
- 5%, 7.5%, 10%, or 20%
Charge Status Output
- Tri-State Output - MCP73831
- Open-Drain Output - MCP73832
Automatic Power-Down
Thermal Regulation
Temperature Range: -40°C to +85°C
Packaging:
- 8-Lead, 2 mm x 3 mm DFN
- 5-Lead, SOT-23
Applications
Lithium-Ion/Lithium-Polymer Batte ry Chargers
Personal Data Assistants
Cellular Telephones
Digital Cameras
MP3 Players
Bluetooth Headsets
USB Chargers
Typical Application
Description:
The MCP73831/2 devices are highly advanced linear
charge management controllers for use in space-lim-
ited, cost-sensitive applications. The MCP7383 1/2 are
available in an 8-Le ad, 2 mm x 3 mm DFN package or
a 5-Lead, SOT-23 package. Along with their small
physical size, the low number of external comp onents
required make the MCP73831/2 ideally suited for
portable applications. For ap plica tions chargi ng from a
USB port, the MCP73831/2 adhere to all the
specifications governing the USB power bus.
The MCP73831/2 employ a constant-current/constant-
voltage charge algorithm with sele ctable precondition-
ing and charge termination. The constant voltage
regulation is fixed with four available options: 4.20V,
4.35V, 4.40V or 4.50V, to accommodate new , emerging
battery charging requirements. The constant current
value is set with one external resistor . The MCP73831/
2 devices limit the charge current based on die temper-
ature during high power or high ambient conditions.
This thermal regulation optimizes the charge cycle time
while maintaining device reliability.
Several options are available for the preconditioning
threshold, preconditioning current value, charge
termination value and automatic recharge threshold.
The preconditioning value and charge termination
value are set as a ratio, or percentage, of the
programmed constant current value. Preconditioning
can be disabled. Refer to Section 1.0 “Electrical
Characteristics” for availab le options and the “Prod-
uct Identification System” for standard options.
The MCP73831/2 devices are fully specified over the
ambient temperature range of -40°C to +85°C.
Package Types
STAT
VDD
VSS
PROG
VBAT +
-Single
Li-Ion
Cell
4
MCP73831
5
3
1
500 mA Li-Ion Battery Charger
2
VIN
4.7 μF
470Ω2kΩ
4.7 μF
VBAT
VSS VDD
1
2
3
5
4
PROG
STAT
MCP73831/2
2×3 DFN*
VBAT
VDD
VBAT
NC
VSS
1
2
3
4
8
7
6
5STAT
PROGVDD
* Includes Exposed Thermal Pad (EP); see Table 3-1.
EP
9
MCP73831/2
SOT-23-5
Miniature Single-Cell, Fully Integrated Li-Ion,
Li-Polymer Charge Management Controllers
MCP73831/2
DS21984E-page 2 © 2008 Microchip Technology Inc.
Functional Block Diagram
+
-
REFERENCE
GENERATOR
VREF(1.22V)
VBAT
VDD
STAT
PROG
VBAT
G=0.001
VSS
DIRECTION
CONTROL
477 kΩ
255 kΩ
UVLO
+
-
+
-
SHDN
DIRECTION
CONTROL
0.5 mA
PRECONDITION
6mA
6mA
+
-
TERMINATION
+
-
43.6 kΩ
+
-
CA
3.9 kΩ
111 kΩ
190 kΩ
7kΩ
15 kΩ
182.3 kΩ
111 kΩ
CHARGE
+
-
+
-
VA
89 kΩ
361 kΩ
100 kΩ
0.5 mA
VDD
MCP73831
ONLY
© 2008 Microchip Technology Inc. DS21984E-page 3
MCP73831/2
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDD...................................................................................7.0V
All Inputs and Outputs w.r.t. VSS ............... -0.3 to (VDD+0.3)V
Maximum Junction Temperature, TJ............Internally Limited
Storage temperature .....................................-65°C to +150°C
ESD protection on all pins:
Human Body Model (1.5 kΩ in Series with 100 pF).......4kV
Machine Model (200 pF, No Series Resistance)......... ....400V
† Notice: S tresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functi onal operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditi ons
for extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters Sym. Min. Typ. Max. Units Conditions
Supply Input
Supply Voltage VDD 3.75 6 V
Supply Current ISS 510 1500 µA Charging
53 200 µA Charge Complete,
No Battery
25 50 µA PROG Floating
—1 5µAV
DD < (VBAT - 50 mV)
—0.1 2µAV
DD < VSTOP
UVLO Start Threshold VSTART 3.3 3.45 3.6 V VDD Low-to-High
UVLO Stop Threshold VSTOP 3.2 3.38 3.5 V VDD High-to-Low
UVLO Hysteresis VHYS —70—mV
Voltage Regulation (Constant-Voltage Mode)
Regulated Output Voltage VREG 4.168 4.20 4.232 V MCP7383X-2
4.317 4.35 4.383 V MCP7383X-3
4.367 4.40 4.433 V MCP7383X-4
4.466 4.50 4.534 V MCP7383X-5
VDD = [VREG(typical)+1V]
IOUT = 10 mA
TA = -5°C to +55°C
Line Regulation |(ΔVBAT/
VBAT)/ΔVDD| 0.09 0.30 %/V VDD = [VREG(typical)+1V] to
6V, IOUT = 10 mA
Load Regulation VBAT/VBAT| 0.05 0.30 % IOUT = 10 mA to 50 mA
VDD = [VREG(typical)+1V]
Supply Ripple Attenuation PSRR 52 —- dB IOUT=10 mA, 10Hz to 1 kHz
—47—dBI
OUT=10 mA, 10Hz to 10 kHz
—22—dBI
OUT=10 mA, 10Hz to 1 MHz
Current Regulation (Fast Charge Constant-Current Mode)
Fast Charge Current
Regulation IREG 90 100 110 mA PROG = 10 kΩ
450 505 550 mA PROG = 2.0 kΩ, Note 1
12.5 14.5 16.5 mA PROG = 67 kΩ
TA = -5°C to +55°C
Note 1: Not production tested. Ensured by design.
MCP73831/2
DS21984E-page 4 © 2008 Microchip Technology Inc.
Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)
Precondition Current
Ratio IPREG / IREG 7.5 10 12.5 % PROG = 2.0 kΩ to 10 kΩ
15 20 25 % PROG = 2.0 kΩ to 10 kΩ
30 40 50 % PROG = 2.0 kΩ to 10 kΩ
100 % No Preconditioning
TA = -5°C to +55°C
Precondition Voltage
Threshold Ratio VPTH / VREG 64 66.5 69 % VBAT Low-to-High
69 71.5 74 % VBAT Low-to-High
Precondition Hysteresis VPHYS —110—mVV
BAT High-to-Low
Charge Termination
Charge Termination
Current Ratio ITERM / IREG 3.75 5 6.25 % PROG = 2.0 kΩ to 10 kΩ
5.6 7.5 9.4 % PROG = 2.0 kΩ to 10 kΩ
8.5 10 11.5 % PROG = 2.0 kΩ to 10 kΩ
15 20 25 % PROG = 2.0 kΩ to 10 kΩ
TA = -5°C to +55°C
Automatic Recharge
Recharge Voltage
Threshold Ratio VRTH / VREG 91.5 94.0 96.5 % VBAT High-to-Low
94 96.5 99 % VBAT High-to-Low
Pass Transistor ON-Resistance
ON-Resistance RDSON 350 mΩVDD = 3.75V, TJ = 105°C
Battery Discharge Current
Output Reverse Leakage
Current IDISCHARGE 0.15 2 µA PROG Floating
—0.25 2µAV
DD Floating
—0.15 2µAV
DD < VSTOP
-5.5 -15 µA Charge Complete
Status Indicator – STAT
Sink Current ISINK ——25mA
Low Output Voltage VOL —0.4 1VI
SINK = 4 mA
Source Current ISOURCE ——35mA
High Output Voltage VOH —V
DD-0.4 VDD - 1 V ISOURCE = 4 mA (MCP73831)
Input Leakage Current ILK 0.03 1 µA High-Impedance
PROG Input
Charge Impedance
Range RPROG 2—67kΩ
Minimum Shutdown
Impedance RPROG 70 200 kΩ
Automatic Power Down
Automatic Power Down
Entry Threshold VPDENTER VDD<(VBAT
+20 mV) VDD<(VBAT
+50 mV) —3.5V VBAT VREG
VDD Falling
Automatic Power Down
Exit Threshold VPDEXIT —V
DD<(VBAT
+150 mV) VDD<(VBAT
+200 mV) 3.5V VBAT VREG
VDD Rising
Thermal Shutdown
Die Temperature TSD 150 °C
Die Temperature
Hysteresis TSDHYS —10—°C
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Not production tested. Ensured by design.
© 2008 Microchip Technology Inc. DS21984E-page 5
MCP73831/2
TEMPERATURE SPECIFICATIONS
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V,
TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters Sym. Min. Typ. Max. Units Conditions
UVLO Start Delay tSTART —— 5 msV
DD Low-to-High
Constant-Current Regulation
Transition Time Out of
Preconditioning tDELAY —— 1 msV
BAT < VPTH to VBAT > VPTH
Current Rise Time Out of
Preconditioning tRISE —— 1 msI
OUT Rising to 90% of IREG
Termination Comparator
Filter tTERM 0.4 1.3 3.2 ms Average IOUT Falling
Charge Comparator Filter tCHARGE 0.4 1.3 3.2 ms Average VBAT
Status Indicator
Status Output turn-off tOFF ——200µsI
SINK = 1 mA to 0 mA
Status Output turn-on tON ——200µsI
SINK = 0 mA to 1 mA
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V.
Typical values are at +25°C, V DD = [VREG (typical) + 1.0V]
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range TA-40 +85 °C
Operating Temperature Range TJ-40 +125 °C
Storage Temperature Range TA-65 +150 °C
Thermal Package Resistances
5-Lead, SOT-23 θJA 230 °C/W 4-Layer JC51-7 Standard
Board, Natural Convection
(Note 2)
8-Lead, 2 mm x 3 mm, DFN θJA 76 °C/W 4-Layer JC51-7 Standard
Board, Natural Convection
(Note 1)
Note 1: This represents the minimum copper condition on the PCB (Printed Circuit Board).
2: With large copper area on the PCB, the SOT-23-5 thermal resistance ( θJA ) can reach a typical value of
130°C/W or better.
MCP73831/2
DS21984E-page 6 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS21984E-page 7
MCP73831/2
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.
FIGURE 2-1: Battery Regulation Voltage
(VBAT) vs. Supply Vo ltage (VDD).
FIGURE 2-2: Battery Regulation Voltage
(VBAT) vs. Am bie nt Temperat ur e (TA).
FIGURE 2-3: Output Leakage Current
(IDISCHARGE) vs. Battery Regulation Voltage
(VBAT).
FIGURE 2-4: Charge Current (IOUT) vs.
Programming Resistor (RPROG).
FIGURE 2-5: Charge Current (IOUT) vs.
Supply Voltage (VDD).
FIGURE 2-6: Charge Current (IOUT) vs.
Supply Voltage (VDD).
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provide d for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified pow er supply range) and therefore outside the warranted range.
4.170
4.175
4.180
4.185
4.190
4.195
4.200
4.205
4.210
4.50 4.75 5.00 5.25 5.50 5.75 6.00
Supply Voltage (V)
Battery Regulation Voltage
(V)
MCP73831-2
IOUT = 10 mA
IOUT = 100 mA
IOUT = 450 mA
4.170
4.175
4.180
4.185
4.190
4.195
4.200
4.205
4.210
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambient Temperature (°C)
Battery Regulation Voltage (V)
MCP73831-2
IOUT = 10 mA
IOUT = 100 mA
IOUT = 450 mA
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
3.00 3.20 3.40 3.60 3.80 4.00 4.20
Battery Regulation Voltage (V)
Output Leakage Current (µA)
+85°C
-40°C
+25°C
0
50
100
150
200
250
300
350
400
450
500
2 7 12 17 22 27 32 37 42 47 52 57 62 67
Programming Resistor (k)
Charge Current (mA)
96
97
98
99
100
101
102
103
104
4.50 4.75 5.00 5.25 5.50 5.75 6.00
Supply Voltage (V)
Charge Current (mA)
RPROG = 10 k
500
502
504
506
508
510
512
514
516
4.50 4.75 5.00 5.25 5.50 5.75 6.00
Supply Voltage (V)
Charge Current (mA)
RPROG = 2 k
MCP73831/2
DS21984E-page 8 © 2008 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.
FIGURE 2-7: Charge Current (IOUT) vs.
Ambient Temperature (TA).
FIGURE 2-8: Charge Current (IOUT) vs.
Ambient Temperature (TA).
FIGURE 2-9: Charge Current (IOUT) vs.
Junction Temperature (TJ).
FIGURE 2-10: Charge Current (IOUT) vs.
Junction Temperature (TJ).
FIGURE 2-11: Power Supply Ripple
Rejection (PSRR).
FIGURE 2-12: Power Supply Ripple
Rejection (PSRR).
96
97
98
99
100
101
102
103
104
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambient Temperature (°C)
Charge Current (mA)
RPROG = 10 k
500
502
504
506
508
510
512
514
516
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambient Temperature (°C)
Charge Current (mA)
RPROG = 2 k
0
15
30
45
60
75
90
105
120
25
35
45
55
65
75
85
95
105
115
125
135
145
155
Junction Temperature (°C)
Charge Current (mA)
RPROG = 10 k
0
75
150
225
300
375
450
525
25
35
45
55
65
75
85
95
105
115
125
135
145
155
Junction Temperature (°C)
Charge Current (mA)
RPROG = 2 k
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (kHz)
Attenuation (dB)
VAC = 100 mVp-p
IOUT = 10 mA
COUT = 4.7 µF, X7R Ceramic
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (kHz)
Attenuation (dB)
VAC = 100 mVp-p
IOUT = 100 mA
COUT = 4.7 µF, X7R Ceramic
© 2008 Microchip Technology Inc. DS21984E-page 9
MCP73831/2
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.
FIGURE 2-13: Line Transient Response.
FIGURE 2-14: Line Transient Response.
FIGURE 2-15: Load Transient Response.
FIGURE 2-16: Load Transient Response.
FIGURE 2-17: Complete Charge Cycle
(180 mAh Li-Ion Battery).
FIGURE 2-18: Complete Charge Cycle
(1000 mAh Li-Ion Battery).
-2
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
140
160
180
200
Time (µs)
Source Voltage (V)
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.05
0.10
Output Ripple (V)
IOUT = 10 mA
COUT = 4.7 µF, X7R Ceramic
-2
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
140
160
180
200
Time (µs)
Source Voltage (V)
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.05
0.10
Output Ripple (V)
IOUT = 100 mA
COUT = 4.7 µF, X7R Ceramic
-0.05
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0
20
40
60
80
100
120
140
160
180
200
Time (µs)
Output Current (A)
-0.12
-0.10
-0.08
-0.06
-0.04
-0.02
0.00
0.02
0.04
Output Ripple (V)
COUT = 4.7 µF, X7R Ceramic
-0.20
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
0
20
40
60
80
100
120
140
160
180
200
Time (µs)
Output Current (A)
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.05
0.10
Output Ripple (V)
COUT = 4.7 µF, X7R Ceramic
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
20
40
60
80
100
120
140
160
180
Time (minutes)
Battery Voltage (V)
0
20
40
60
80
100
120
Charge Current (mA)
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 10 k
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
30
60
90
120
150
180
210
240
Time (minutes)
Battery Voltage (V)
0
100
200
300
400
500
600
Charge Current (mA)
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 2 k
MCP73831/2
DS21984E-page 10 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS21984E-page 11
MCP73831/2
3.0 PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLES
3.1 Battery Management Input Supply
(VDD)
A supply voltage of [VREG (typical) + 0.3V] to 6V is
recommended. Bypass to VSS with a minimum of
4.7 µF.
3.2 Battery Charge Control Output
(VBAT)
Connect to positive terminal of battery. Drain terminal
of internal P-channel MOSFET pass transistor. Bypass
to VSS with a minimum of 4.7 µF to ensure loop stability
when the battery is disconnected.
3.3 Charge Status Output (STAT)
STAT is a n output for con nection to an LED for charge
statu s indication. Alternative ly , a pul l-up resistor can be
applied for interfacing to a host microcontroller.
STAT is a tri-state l ogic output on the MCP73831 and
an open-drain output on the MCP73832.
3.4 Battery Management 0V Reference
(VSS)
Connect to negative terminal of battery and input
supply.
3.5 Current Regulation Set (PROG)
Preconditioning, fast charge and termination currents
are scaled by placing a resistor from PROG to VSS.
The charge management controller can be disabled by
allowing the PR OG input to float.
3.6 Exposed Thermal Pad (EP)
There is an internal ele ctrical connection between the
Exposed Thermal Pad (EP) and the VSS pin; they must
be connected to the same potential on the Printed
Circuit Board (PCB).
Vias are recommended to add from land a rea o f EP to
a copper layer on the other side of the PCB for be tter
thermal performance.
Pin No.
Symbol Function
DFN SOT-23-5
14 V
DD Battery Management Input Supply
2— V
DD Battery Management Input Supply
33 V
BAT Battery Charge Control Output
4— V
BAT Battery Charge Control Output
5 1 STAT Charge Status Output
62 V
SS Battery Management 0V Reference
7 NC No Connection
8 5 PROG Current Regulation Set and Charge Control Enable
9— EP
Exposed Thermal Pad (EP); must be conne cted to VSS.
MCP73831/2
DS21984E-page 12 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS21984E-page 13
MCP73831/2
4.0 DEVICE OVERVIEW
The MCP73831/2 are highly advanced linear charge
management controllers. Figure 4-1 depicts the
operational flow algorithm from charge initiation to
completion and automatic recharge.
FIGURE 4-1: Flowchart.
4.1 Undervoltage Lockout (UVLO)
An internal UVLO circuit monitors the input voltage and
keeps the charger in Shutdown mode until the input
supply rises above the UVLO threshold. The UVLO
circuitry has a built in hysteresis of 100 mV.
In the event a battery is p resent when the input power
is applied, the input supply must rise 150 mV above the
battery voltage before the MCP73831/2 becomes oper-
ational.
The UVLO cir cuit p laces th e device in Shutdown mode
if the input supply falls to wi thin +50 mV of the battery
voltage. Again, the input supply must rise to a level
150 mV above the battery voltage before the
MCP73831/2 become operational.
The UVLO circuit is always active. Whenever the input
supply is below the UVLO threshold or withi n +50 mV
of the voltage at the VBAT pin, the MCP73831/2 are
placed in a Shutdown mode.
During any UVLO condition, the battery reverse
discharge current will be less than 2 µA.
4.2 Charge Qualification
For a charge cycle to begin, all UVLO conditions must
be met and a battery or output load must be present. A
charge current programming resistor must be
connected from PROG to VSS. If the PROG pin is open
or floating, the MCP73831/2 are disabled and the
battery reverse discharge current is less than 2 µA. In
this manner, the PROG pin acts as a charge enable
and can be used as a manual shutdown.
4.3 Preconditioning
If the voltage at the VBAT pi n is less than th e precon di-
tioning threshold, the MCP73831/2 enter a precondi-
tioning or Trickle Charge mode. The preconditioning
threshold is factory set. Refer to Section 1.0 “Electri-
cal Characteristics” for preconditioning threshold
options and the Product Identification System for
standard options.
In this mode, the MCP73831/2 su pply a percentage of
the charge current (established with the value of the
resistor connected to the PROG pin) to the battery . The
percentage or ratio of the current is factory set. Refer to
Section 1.0 “Electrical Characteristics” for
preconditioning current options and the ”Product
Identification System” for standard options.
When the voltage at the VBAT pin rises above the
preconditioning threshold, the MCP73831/2 enter the
Constant-Current or Fast Charge mode.
4.4 Fast Charge Constant-Current
Mode
During the Constant-Current mode, the programmed
charge current is supplied to the battery or load. The
charge current is established using a single resistor
from PROG to VSS. Constant-Current mode is
maintained until the voltage at the VBAT pin reaches the
regulation voltage, VREG.
SHUTDOWN MODE
VDD < VUVLO
VDD < VBAT
or
PROG > 200 kΩ
STAT = Hi-Z
PRECONDITIONING
MODE
Charge Current = IPREG
STAT = LOW
FAST CHARGE
MODE
Charge Current = IREG
STAT = LOW
CONSTANT VOLTAGE
MODE
Charge Voltage = VREG
STAT = LOW
VBAT < VPTH
VBAT > VPTH
VBAT = VREG
VBAT < VRTH
VBAT > VPTH
IBAT < ITERM
CHARGE COMPLETE
MODE
No Charge Current
STAT = HIGH (MCP73831)
STAT = Hi-Z (MCP73832)
MCP73831/2
DS21984E-page 14 © 2008 Microchip Technology Inc.
4.5 Constant-Voltage Mode
When the voltage at the VBAT pin reaches the regula-
tion voltage, VREG, constant voltage regulation begins.
The regulation voltage is factory set to 4.2V, 4.35V,
4.40V, or 4.50V with a tolerance of ±0.75%.
4.6 Charge Termination
The charge cycle is terminated when, during Constant-
Voltage mode, the average charge current diminishes
below a percentage of the programmed charge current
(established with the value of the resistor connected to
the PROG pin). A 1 ms filter time on the termination
comparator ensures that transient load conditions do
not result in premature charge cycle termination. The
percentage or ratio of the current is factory set. Refer to
Section 1.0 “Electrical Characteristics” for charge
termination current options and the ”Product
Identification System” for standard options.
The charge current is latched off and the MCP73831/2
enter a Charge Complete mode.
4.7 Automatic Recharge
The MCP73831/2 continuously monitor the voltage at
the VBAT pin in the Charge Complete mode. If the
voltage drops below the recharge threshold, another
charge cycle begins and current is once again supplied
to the battery or load. The recharge threshold is factory
set. Refer to Section 1.0 “Electrical Characteristics”
for recharge threshold options and the ”Product
Identification System” for standard options.
4.8 Thermal Regulation
The MCP73831/2 limit the charge current based on the
die temperature. The th ermal regulation optimizes the
charge cycle time while maintaining device reliability.
Figure 4-2 depicts the thermal regulation for the
MCP73831/2.
FIGURE 4-2: Thermal Regulation.
4.9 Thermal Shutdown
The MCP73831/2 suspend charge if the die tempera-
ture exceeds 150°C. Charging will resume when the
die temperature has cooled by approximately 10°C.
0
75
150
225
300
375
450
525
25
35
45
55
65
75
85
95
105
115
125
135
145
155
Junction Temperature (°C)
Charge Current (mA)
RPROG = 2 kΩ
© 2008 Microchip Technology Inc. DS21984E-page 15
MCP73831/2
5.0 DETAILED DESCRIPTION
5.1 Analog Circuitry
5.1.1 BATTERY MANAGEMENT INPUT
SUPPLY (VDD)
The VDD input is the in put supply to the MCP73831/2.
The MCP73831/2 automatically enter a Power-Down
mode if the voltage on the VDD input falls below the
UVLO voltage (VSTOP). This feature prevents draining
the battery pack when the VDD supply is not present.
5.1.2 CURRENT REGULATION SET
(PROG)
Fast charge current regulation can be scaled by placing
a programming resistor (RPROG) from the PROG input
to VSS. The program resistor and the charge current
are calculated using the following equ ation:
The preconditioning trickle charge current and the
charge termination current are ratiometric to the fast
charge current based on the selected device options.
5.1.3 BATTERY CHARGE CONTROL
OUTPUT (VBAT)
The battery charge co ntrol output is the drain termina l
of an internal P-channel MOSFET. The MCP73831/2
provide constant current and voltage regulation to the
battery pack by controlling this MOSFET in the linear
region. The battery charge control output should be
connected to the positive terminal of the battery pack.
5.2 Digital Circuitry
5.2.1 STATUS INDICATOR (STAT)
The charge status output of the MCP73831 has three
different states: High (H), Low (L), and High-Imped-
ance (Hi-Z). The charge status output of the
MCP73832 is open-drain, and, as such, has two
different states: Low (L), and High-Impedance (Hi-Z).
The charge charge status output can be used to
illuminate 1, 2, or tri-color LEDs. Optionally, the charge
status output can be used as an interface to a host
microcontroller.
Table 5-1 summarize the state of the status output
during a charge cycle..
5.2.2 DEVICE DISABLE (PROG)
The current regulation set input pin (PROG) can be
used to terminate a charge at any time during the
charge cycle, as well as to initiate a charge cycle or
initiate a recharge cycle.
Placing a programming resistor from the PROG input to
VSS enables the device. Allowing the PROG input to
float or by applying a logic-high input signal, disables
the device and terminates a charge cycle. When
disabled, the device’s supply current is reduced to
25 µA, typically.
IREG 1000V
RPROG
-----------------=
Where:
RPROG =kOhms
IREG = milliampere
TABLE 5-1: STATUS OUTPUT
Charge Cycle State
STAT1
MCP73831 MCP73832
Shutdown Hi-Z Hi-Z
No Battery Present Hi-Z Hi-Z
Preconditioning L L
Const a nt -C urrent Fast
Charge LL
Constant Voltage L L
Charge Complete –
Standby HHi-Z
MCP73831/2
DS21984E-page 16 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS21984E-page 17
MCP73831/2
6.0 APPLICATIONS
The MCP73831/2 are designed to ope rate in conjunc-
tion with a host microcontroller or in a stand-alone
application. The MCP73831/2 provide the preferred
charge algorithm for Lithium-Ion and Lithium-Polymer
cells constant current followed by constant voltage.
Figure 6-1 depicts a typical stand-alone application
circuit, while Figures 6-2 and 6-3 depict the
accompanying charge profile.
FIGURE 6-1: Typical Application Circuit.
FIGURE 6-2: Typical Charge Profile
(180 mAh Battery). FIGURE 6-3: Typical Charge Profile in
Thermal Regulation (1000 mAh Battery).
6.1 Application Circuit Design
Due to the low efficiency of linear charging, the most
important factors are thermal design and cost, which
are a direct function of the input voltage, output current
and thermal impedance between the battery charger
and the ambient cooling air . The worst-case situation is
when the device has transitioned from the
Preconditioning mode to the Constant-Current mode.
In this situation, the battery charger has to dissipate the
maximum power. A trade-off must be made between
the charge current, cost and thermal requirements of
the charger.
6.1.1 COMPONENT SELECTION
Selection of the external components in Figure 6-1 is
crucial to the integrity and reliability of the charging
system. The following discussion is intended as a guide
for the component selection process.
6.1.1.1 Current Programming Resistor
(RPROG)
The preferred fast charge current for Lithium-Ion cells
is at the 1C rate, with an absolute maximu m current at
the 2C rate. For example, a 500 mAh battery pack has
a preferred fast charge current of 500 mA. Charging at
this rate provides the shortest charge cycle times
without degradation to the battery pack performance or
life.
STAT
VDD
VSS
PROG
VBAT +
-Single
Li-Ion
Cell
4
MCP73831
5
3
1
CIN
Li-Ion Battery Charger
2RPROG
RLED COUT
REGULATED
WALL CUBE LED
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
20
40
60
80
100
120
140
160
180
Time (minutes)
Battery Voltage (V)
0
20
40
60
80
100
120
Charge Current (mA)
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 10 k
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
30
60
90
120
150
180
210
240
Time (minutes)
Battery Voltage (V)
0
100
200
300
400
500
600
Charge Current (mA)
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 2 k
MCP73831/2
DS21984E-page 18 © 2008 Microchip Technology Inc.
6.1.1.2 Thermal Considerations
The worst-case power dissipation in the battery
charger occurs when the input voltage is at the
maximum and the device has transitioned from the
Preconditioning mode to the Constant-Current mode.
In this case, the power dissipation is:
Power dissipation with a 5V, ±10% input voltage source
is:
This power dissipation with the battery charger in the
SOT-23-5 package will cause thermal reg ulation to be
entered as depicted in Figure 6-3. Alternatively, the
2mm x 3mm DFN package could be utilized to reduce
charge cycle times.
6.1.1.3 External Capacitors
The MCP73831/2 are stable with or without a battery
load. In order to maintain good AC stability in the Con-
stant-Voltage mode, a minimum capacitance of 4.7 µF
is recommended to bypass the VBAT pin to VSS. This
capacitance provides compensation when there is no
battery load. In addition, the battery and interconnec-
tions appear inductive at high frequencies. These
elements are in the control feedback loop during
Constant-Voltage mode. Therefore, the bypass capac-
itance may be necessary to compensate for the
inductive nature of the battery pack.
Virtually any good quality ou tp ut filter capacitor can be
used, independent of the capacitor’s minimum
Effective Series Resistance (ESR) value. The actual
value of the capacitor (and its associated ESR)
depends on the output load current. A 4.7 µF ceramic,
tantalum or aluminum electrolytic capacitor at the
output is usually sufficient to ensure stability for output
currents up to a 500 mA.
6.1.1.4 Reverse-Blocking Protection
The MCP73831/2 provi de protection from a faulted or
shorted input. Without the protection, a faulted or
shorted input would discharge the battery pack through
the body diode of the internal pass transistor.
6.1.1.5 Charge Inhibit
The current regulation set input pin (PROG) can be
used to terminate a charge at any time during the
charge cycle, as well as to initiate a charge cycle or
initiate a recharge cycle.
Placing a programming resistor from the PROG input to
VSS enables the device. Allowing the PROG input to
float or by applying a logic-high input signal, disables
the device and terminates a charge cycle. When
disabled, the device’s supply current is reduced to
25 µ A, typically.
6.1.1.6 Charge Status Interface
A status output provides information on the state of
charge. The output can be used to i lluminate external
LEDs or interface to a host microcontroller. Refer to
Table 5-1 for a summary of the state of the status
output during a charge cycle.
6.2 PCB Layout Issues
For optimum voltage regulation, place the battery pack
as close as possible to the device’s VBAT and VSS pins.
This is recommended to minimize voltage drops along
the high current-carrying PCB traces.
If the PCB layout is used as a heatsink, adding many
vias in the heatsink pad can help conduct more heat to
the backplane of the PCB, thus reducing the maximum
junction temperature. Figures 6-4 and 6-5 depict a
typical layout with PCB heatsinking.
FIGURE 6-4: Typical La yo ut (Top).
FIGURE 6-5: Typical La yo ut (B ott om ) .
PowerDissipation VDDMAX VPTHMIN
()IREGMAX
×=
Where:
VDDMAX = the maximum input voltage
IREGMAX = the maximum fast charge current
VPTHMIN = the minimum transition threshold
voltage
PowerDissipation 5.5V2.7V()550mA×1.54W==
COUT
LED
RPROG
CIN
MCP73831
RLED
VBAT VDD
VSS
V
BAT
V
SS
V
DD
© 2008 Microchip Technology Inc. DS21984E-page 19
MCP73831/2
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
5-Lead SOT-23 Example:
XXNN KD25
8-Lead DFN (2 mm x 3 mm) Example:
XXX
YWW
NN
AAE
739
25
Device Code
MCP73831T-2ACI/MC AAE
MCP73831T-2ATI/MC AAF
MCP73831T-2DCI/MC AAG
MCP73831T-3ACI/MC AAH
MCP73831T-4ADI/MC AAJ
MCP73831T-5ACI/MC AAK
MCP73832T-2ACI/MC AAL
MCP73832T-2ATI/MC AAM
MCP73832T-2DCI/MC AAP
MCP73832T-3ACI/MC AAQ
MCP73832T-4ADI/MC AAR
MCP73832T-5ACI/MC AAS
Note: Applies to 8-Lead DFN
Device Code
MCP73831T-2ACI/OT KDNN
MCP73831T-2ATI/OT KENN
MCP73831T-2DCI/OT KFNN
MCP73831T-3ACI/OT KGNN
MCP73831T-4ADI/OT KHNN
MCP73831T-5ACI/OT KJNN
MCP73832T-2ACI/OT KKNN
MCP73832T-2ATI/OT KLNN
MCP73832T-2DCI/OT KMNN
MCP73832T-3ACI/OT KPNN
MCP73832T-4ADI/OT KQNN
MCP73832T-5ACI/OT KRNN
MCP73832T-2DFI/OT LUNN
Note: Applies to 5-Lead SOT-23
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric trac eability code
Pb-free JEDEC designator for Matte Ti n (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
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MCP73831/2
DS21984E-page 20 © 2008 Microchip Technology Inc.
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© 2008 Microchip Technology Inc. DS21984E-page 19
MCP73831/2
APPENDIX A: REVISION HISTORY
Revision E (September 2008)
The following is the list of modificatio ns:
1. Package Types: Changed DFN pinout diagram.
2. 1.0 “Electrical Characteristics”: Changed
“Charge Impedance Range from 20 kΩ to
67 kΩ.
3. 1.0 “Electrical Characteristics”: Misc. Format-
ting changes.
4. Section 2.0 “Typical Performance Curves”:
Updated Figure 2-4.
5. Section 3.0 “Pin Description”: Added
Exposed Pad pin to table and added
Section 3.6 “Exposed Thermal Pad (EP)”.
6. Updated Appendix A: “Revision History”
7. Added Land Patttern Package Outline Drawing
for 2x3 DFN package.
8. Pagination fixes throughout document per
Marcom Standards.
Revision D (April 2008)
The following is the list of modificatio ns:
1. Changed Charge Termination Current Ratio to
8.5% minimum and 11.5% maximum.
Revision C (October 2007)
The following is the list of modificatio ns:
1. Numerous edits throughout document.
2. Added note to Temperature Specifications t able.
3. Updated Figure 2-4.
Revision B (March 2006)
The following is the list of modificatio ns:
1. Added MCP73832 through document.
Revision A (November 2005)
Original Release of this Document.
MCP73831/2
DS21984E-page 20 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS21984E-page 21
MCP73831/2
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: MCP73831: Single-Cell Charge Controller
MCP73831T: Single-Cell Charge Controller
(Tape and Reel)
MCP73832 Single-Cell Charge Controller
MCP73832T: Single-Cell Charge Controller
(Tape and Reel)
Regulation
Voltage:
Code VREG
2=
3=
4=
5=
4.20V
4.35V
4.40V
4.50V
Options: * Code IPREG/IREG VPTH/VREG ITERM/IREG VRTH/VREG
AC
AD
AT
DC
10
10
10
100
66.5
66.5
71.5
x
7.5
7.5
20
7.5
96.5
94
94
96.5
* Consult Factory for Alternative Device Options
Temperature
Range: I= -40°C to +85°C (Industrial)
Package: MC = Dual-Flat, No-Lead (2x3 mm body), 8-Lea d
OT = Small Outline Transistor (SOT23), 5-Lead
Examples: *
a) MCP73831-2ACI/OT: 4.20V VREG,
Options AC, 5LD SOT23 Pkg
b) MCP73831T-2ACI/OT: Tape and Reel,
4.20V VREG, Options AC, 5LD SOT23 Pkg
c) MCP73832-2ACI/MC: 4.20V VREG,
Options AC, 8LD DFN Package
d) MCP73832T-2ACI/MC: Tape and Reel,
4.20V VREG, Options AC, 8LD DFN Package
a) MCP73831-2ATI/OT: 4.20V VREG,
Options AT, 5LD SOT23 Pkg
b) MCP73831T-2ATI/OT: Tape and Reel,
4.20V VREG, Options AT, 5LD SOT23 Pkg
c) MCP73832-2ATI/MC: 4.20V VREG,
Options AT, 8LD DFN Package
d) MCP73832T-2ATI/MC: Tape and Reel,
4.20V VREG, Options AT, 8LD DFN Package
a) MCP73831-2DCI/OT: 4.20V VREG,
Options DC, 5LD SOT23 Pkg
b) MCP73831T-2DCI/OT: Tape and Reel,
4.20V VREG, Options DC, 5LD SOT23 Pkg
c) MCP73832-2DCI/MC: 4.20V VREG,
Options DC, 8LD DFN Package
d) MCP73832T-2DCI/MC:Tape and Reel,
4.20V VREG, Options DC, 8LD DFN Package
a) MCP73831-3ACI/OT: 4.35V VREG,
Options AC, 5LD SOT23 Pkg
b) MCP73831T-3ACI/OT: Tape and Reel,
4.35V VREG, Options AC, 5LD SOT23 Pkg
c) MCP73832-3ACI/MC: 4.35V VREG,
Options AC, 8LD DFN Package
d) MCP73832T-3ACI/MC: Tape and Reel,
4.35V VREG, Options AC, 8LD DFN Package
a) MCP73831-4ADI/OT: 4.40V VREG,
Options AD, 5LD SOT23 Pkg
b) MCP73831T-4ADI/OT: Tape and Reel,
4.40V VREG, Options AD, 5LD SOT23 Pkg
c) MCP73832-4ADI/MC: 4.40V VREG,
Options AD, 8LD DFN Package
d) MCP73832T-4ADI/MC: Tape and Reel,
4.40V VREG, Options AD, 8LD DFN Package
a) MCP73831-5ACI/OT: 4.50V VREG,
Options AC, 5LD SOT23 Pkg
b) MCP73831T-5ACI/OT: Tape and Reel,
4.50V VREG, Options AC, 5LD SOT23 Pkg
c) MCP73832-5ACI/MC: 4.50V VREG,
Options AC, 8LD DFN Package
d) MCP73832T-5ACI/MC: Tape and Reel,
4.50V VREG, Options AC, 8LD DFN Package
* Consult Factory for Alternat e Device Options
PART NO.
Device
X
VREG
/XX
Package
XX
Options
X
Temperature
Range
MCP73831/2
DS21984E-page 22 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS21984E-page 23
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defen d, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, rfPIC, SmartShunt and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Linear Active Thermistor, MXDEV, MXLAB,
SEEV AL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,
PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo,
PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total
Endurance, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Dat a
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digit al Millennium Copyright Act. If such acts
allow unauthorized access to you r software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:200 2 certif ication for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperi pherals, nonvola tile memo ry and
analog product s. In addition, Microchip s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21984E-page 24 © 2008 Microchip Technology Inc.
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