© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 7
1Publication Order Number:
MBRF20100CT/D
MBRF20100CT
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal- to- silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low-voltage, high-frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL 94 V-0 @ 0.125 in
Electrically Isolated. No Isolation Hardware Required.
Pb-Free Package is Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MBRF20100CT TO-220 50 Units/Rail
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
2
1
3
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MBRF20100CTG TO-220
(Pb-Free)
50 Units/Rail
ISOLATED TO-220
CASE 221D
STYLE 3
3
12
MARKING DIAGRAM
AYWW
B20100G
A K A
A = Assembly Location
Y = Year
WW = Work Week
B20100 = Device Code
G = Pb-Free Package
AKA = Polarity Designator
MBRF20100CT
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2
MAXIMUM RATINGS (Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(Rated VR), TC = 133°C Total Device
IF(AV) 10
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 133°C
IFRM 20 A
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A
Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg -65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10000 V/ms
RMS Isolation Voltage (t = 0.3 second, R.H. 30%, TA = 25°C) (Note 2) Per Figure 3 Viso1 4500 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Rating Symbol Value Unit
Maximum Thermal Resistance, Junction to Case RqJC 3.5 °C/W
Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 10 Amp, TC = 25°C)
(iF = 10 Amp, TC = 125°C)
(iF = 20 Amp, TC = 25°C)
(iF = 20 Amp, TC = 125°C)
vF
0.85
0.75
0.95
0.85
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
0.15
150
mA
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA.
2. Proper strike and creepage distance must be provided.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode
0.01
0.1
1.0
10
120100806040200
VR, REVERSE VOLTAGE (VOLTS)
IR, REVERSE CURRENT (mA)
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 25°C
0.5
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.0
3.0
5.0
10
20
50
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
TJ = 25°C
100°C
150°C
MBRF20100CT
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3
TEST CONDITIONS FOR ISOLATION TESTS*
FULLY ISOLATED PACKAGE
LEADS
HEATSINK
0.110, MIN
Figure 3. Mounting Position for Isolation Test Number 1
*Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION
CLIP
HEATSINK
Figure 4. Typical Mounting Technique
Clip-Mounted
MBRF20100CT
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4
PACKAGE DIMENSIONS
TO-220 FULLPAK
CASE 221D-03
ISSUE J
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.617 0.635 15.67 16.12
INCHES
B0.392 0.419 9.96 10.63
C0.177 0.193 4.50 4.90
D0.024 0.039 0.60 1.00
F0.116 0.129 2.95 3.28
G0.100 BSC 2.54 BSC
H0.118 0.135 3.00 3.43
J0.018 0.025 0.45 0.63
K0.503 0.541 12.78 13.73
L0.048 0.058 1.23 1.47
N0.200 BSC 5.08 BSC
Q0.122 0.138 3.10 3.50
R0.099 0.117 2.51 2.96
S0.092 0.113 2.34 2.87
U0.239 0.271 6.06 6.88
-B-
-Y-
G
N
D
L
K
H
A
F
Q
3 PL
123
M
B
M
0.25 (0.010) Y
SEATING
PLANE
-T-
U
C
S
J
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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 Phone: 81-3-5773-3850
MBRF20100CT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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