TYPES 2N2913 THRU 2N2920, 2N2915A, 2N291GA, 2N2919A, 2N2920A, 2N2972 THRU 2N2979 SOLID STATE INC. DUAL N-P-N SILICON TRANSISTORS 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com A BROAD FAMILY OF DUAL TRANSISTORS RECOMMENDED FOR e Differential Amplifiers e High-Gain, Low-Noise, Audio Amplifiers e Transducer Signal-Conditioner Amplifiers e Low-Level Flip-Flops *mechanical data ALL LEAOS INSULATED FROM CASE Dimensions without tolerance desig- nate true position. Leads having maxi- mum diameter (0.019''} measured in LEADS 0.019 0.289 aso ~ po 2.128 Soe DIA 0.200- [ ove fea gaging plane 0.054 +0.001" -0.000"" S108 EAtr below the seating plane of the device t A, i aah shall be within 0,007 of their true 2.2% ov, 2.370 oy, a fs i position relative to a maximum width 0.905 ang 4 tab. = | ze I Y/- 38 =| om Scale 1, COLLECTOR 1 0.078 L,_. os00 ee 2. BASE1 3. EMITTER 1 . 5. EMITTER 2 ALL DIMENSIONS ARE IN INCHES 6. BASE 2 UNLESS OTHERWISE SPECIFIED 7, COLLECTOR 2 OUTLINE A TYPES 2N2913 THRU 2N2920, 2N2915A, 2N2916A, 2N2919A, 2N2920A ALL LEADS INSULATED FROM CASE 4 ueans 2077 oi FALLS WITHIN TO-71 DIMENSIONS 0.170 0.040 1. EMITTER 1 max7l 2. BASE 1 +- 3. COLLECTOR 1 0.230 9.19 5. EMITTER 2 0209 0.178 6. BASE 2 7. COLLECTOR 2 j{ 4t_y bi ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED OUTLINE B TYPES 2N2972 THRU 2N2979 quick-selection quide (for details see characteristics on the following pages) TYPE MIN Vianiceo MIN-MAX hee min AEE! Weei-Vaeai Vee 1-Vee2iATal {Io = 10 nA) bre (Ic = 100 pA} (Tact = 28C, Taray = 128C) OUTLINE A [OUTLINES | 60V 45v_ | 60-240 [150-600 | 0.9 08 1Smv |] amv | SmVv | O5mV | tmv Zmv 22913 2N2972 e 2N2914 2N2973 2N2815 2N2974 2N2915A e 2N2916 2N2975 e e e 2N2916A e e e e 2N2917 2N2976 e e 2N2918 2N2977 e e 2N2919 2N2978 e 2N2979A @ 2N2920 2N2979 e e 2NZ920A e e *JEDEC registered data, This data sheet contains all applicable registered data in effect at the time of publication.TYPES 2N2913 THRU 2N2920, 2N2915A, 2N2916A, 2N2919A, 2N2920A, 2N2972 THRU 2N2979 DUAL N-P-N SILICON TRANSISTORS *absolute maximum ratings at 25C free-air temperature (unless otherwise noted) 2N2913 thru 2N2972 2N2919 2N2918 thru 2N2919A 2N2978 2N2915A 2N2977 2N2920 2N2979 2N2916A 2N2920A UNIT EACH TOTAL EACH TOTAL EACH TOTAL EACH TOTAL TRIODE DEVICE | TRIODE ODEVICE | TRIODE DEVICE | TRIODE DEVICE Collector-Base Voltage 45 45 60 60 Vv Colfector-Emitter Voltage (See Note 1) 45 a5 60 60 v Emitter-Base Voltage 6 6 6 6 Vv Collector-1 Collector-2 Voltage (+200)t (200)t Vv Continuous Collector Current 30 30 30 30 mA Continuous Device Dissipation at (ar below) 03 05 0.25 0.3 0.3 0s 0.25 03 w 25 C Free-Air Temperature (See Note 2) Continuous Device Dissipation at {or betow) 0.75 15 0.5 0.75 0.75 15 0.5 0.75 w 25 C Case Temperature (See Note 3} Storage Temperature Range -65 to 200 -65 to 200 -65 to 200 -65 to 200 c Lead Temperature 1/16 Inch from Case 300 300 300 300 tor 60 Seconds *electrical characteristics at 25C free-air temperature (unless otherwise noted) individual triode characteristics (see note 4) 2N2913 2N2914 . 2N2915 2N2916 2N2915A 2N2916A 2N2919 2N2920 2N2917 2N2918 2N2919A | 2N2920A PARAMETER TEST CONDITIONS 2N2972 2N2973 2N2978 2N2979 UNIT 2N2974 2N2975 2N2976 2N2977 MIN MAX | MIN MAX] MIN MAX] MIN MAX Visriceo Collector-Base Breakdown Valtage te = 10nA, Ie = 0 45 4s 60 60 Vv Vigaiceo Collector-Emitter Breakdown Voitage {tc = 10 mA, Ig = 0, See Note 5 45 45 60 60 v Vierieso Emitter-Base Breakdown Voltage te = 10uA, Ig #0 6 6 6 6 v {cBo Collector Cutoff Current Vep = 45V, te =0 5 10 10 2 2 nA Veg = 45 V, Ie = 0, Ta = 150C 10 10 10 10 nA IcEO Collector Cutoff Current Vee =5V, 19 = 0 2 2 2 2 nA lego Emitter Cutoff Current Veg =5V, Ic = 0 2 2 2 2 nA Vee 8V, Ic=10uA 60 240 150. 600 | 60 240 | 150 600 h Static Forward Current Vee = SV. tc = 100uA 100 225 100 225 FE Transter Ratio Voce = SV, Ic=imA 150 300 150 300 18 30. 15 40 Voce BV, Ic#10uA, Ta =-55C ce cen OA (401 Vee Base-Emitter Vottage Vee =5V, Ic = 100NA 0.7 0.7 0.7 0.7 Vv VeeE(sat) Collector-Emitter Saturation Voltage [lg = 100 uA, Io = 1mA 0.35 0.35 0.35 0.35 v NOTES: 1. These values apply when the base-emitter diode is open-circuited. 2. Derate linearly to 200C free-air temperature at the following rates: 1.72 mW/C for each triode and 2.86 mW/C for total device (2N2913 thru 2N2920, 2N2915A, 2N2916A, 2N2919A, 2N2920A); 1.43 mW/C for each triode and 1.72 mW/C for total device (2N2972 thru 2N2979), 3. Derate linearly to 200C case temperature at the following rates: 4.3 mW/C for each triode and 8.6 mW/C for total device (2N2913 thru 2N2920, 2N2915A, 2N2916A, 2N2919A, 2N2920A); 2.96 mW/C for each triode and 4.3 mW/*C for total device {2N2972 thru 2N2979). 4. The terminals of the triode not under test are open-circuited for the measurement of these characteristics. 5. This parameter must be measured using pulse techniques. ty = 300 Ms, duty cycle < 1%, JEOEC registered data tThese values apply to types 2N2915A, 2N2916A, 2N2919A, and 2N2920A only, tThis value applies to type 2N2916A only,TYPES 2N2913 THRU 2N2920, 2N2915A, 2N2S91GA, 2N2919A, 2N2920A, 2N2972 THRU 2N2979 DUAL N-P-N SILICON TRANSISTORS *electrical characteristics at 25C free-air temperature (continued) individual triode characteristics (see note 4) 2N2913 thru 2N2915A 2N2920 2N2916A PARAMETER TEST CONDITIONS 2N2972 2N2919A UNIT thru 2N2920A 2N2979 MIN MAX MIN MAX hip Smail-Signal Common-Base Vea "SV. Ic=imA, f=1kHz 25 32 25 32 2 Input Impedance hoo Small-Signal Common-Base Vea *5V, IgsimA, *1kHz 1 1 umho Output Admittance thee! Small-Signal Common-Emitter Vee =5V, Ig = 0.5 mA, f= 20 MHz 3 3 8 Forward Current Transfer Ratio Copp - COMMon-Base Open-Circuit Veg =5V, Ie =0, f = 140 kHz to 1 MHz 6 6 pF Output Capacitance Cipp - COMMon-Base Open-Circuit Veg = 0.5V, Ic =0, f= 140 kHz to 1 MHz 10 pF Input Capacitance triode matching characteristics 2N2915 2N2916 2N2919 2N2915A 2N2917 2N2920 2N2916A 2N2918 2N2974 2N2919A4 2N2976 PARAMETER TEST CONDITIONS 2N2975 2N2920A 2N2977 UNIT 2N2978 2N2979 MIN MAX | .MIN MAX | MIN MAX Vee=5V. Ic = 100HA, 0.9 1 0.3 1 0.8 1 hee4 Static Forward-Currant- See Note 6 hee2 Gain Balance Ratio Vee =5V, I = 100 nA to 1 mA, 0.85 1 Ta = -55 C to 125 C, See Note 6 lv, -V \ Base-E mitter-Voltage Vee =5V, Io = 100 uA 3 1.5 5 Ber nBe? Differential Voce =5V, Io = 10 nA to 1mA 5 2 10 mv Base-Emitter-Voltage- Vee =5 ve ' = 100 a 0.8 0.4 1.6 \AVee1 Vee2laral Differential Change Tain * 28 C, Tara) # 85 mV With Temperature Vee *5 ve lc= 100 nA, 1 0.5 2 Tac = 25 C, Tag) = 125 C *operating characteristics at 25C free-air temperature individual triode characteristics (see note 4} 2N2913 2N2919A 2N2914 2N2920A 2N2915 2N2972 2N2916 2N2973 PARAMETER TEST CONDITIONS 2N2915A = 2N2974 2N2916A 2N2975 UNIT 2N2917 2N2976 2N2918 2N2977 2N2919 2N2978 2N2920 2N2979 MAX MAX Vee =5V, te =10uA, Rg = 10k, 4 3 FE Average Noise Figure f=1kHz, Noise bandwidth = 200 Hz d8 Vee =5V. Ie =10nA, Rg = 10k, a 3 Noise bandwidth = 15.7 kHz, See Note 7 NOTES: 4. The terminals of the triode not under test are open-circuited for the measurement of these characteristics, 6. The tower of the two hee readings is taken as heey. 7. This parameter is measured in an amplifier with response down 3 dB at 10 Hz and 10 kHz and a high-frequency rolloff of 6 dB/octave. *JEDEC registered dataTYPES 2N2913 THRU 2N2920, 2N2915A, 2N291GA, 2N2919A, 2N2920A, 2N2972 THRU 2N2978 DUAL N-P-N SILICON TRANSISTORS TYPICAL MATCHING CHARACTERISTICSt [Vac ~Voe 2 Base~Emitter-Voltage Differential mV FOR TYPES 2N2915, 2N2915A, 2N2916, 2N2916A, 2N2919, 2N2919A, 2N2920, 2N2920A, 2N2974, 2N2975, 2N2978, 2N2979 STATIC FORWARD~CURRENT~-GAIN BALANCE RATIO Oo 3 1 o VU 5 gz 10 0.8 Cc 9 5 0.6 S = 6 wu (0.4 5 wv | oe ~|~ ole 0 3S BASE-EMITTER- VOLTAGE DIFFERENTIAL vs COLLECTOR CURRENT Voge =5V 40 100 ! Collector Current pA FIGURE 2 400 COLLECTOR CURRENT Ta = 25C Ta = ~55C Ta = 125C Veg =5V See Note 6 40 400 1000 le Collector Current pA NOTE 6: The lower of the two hee readings is taken as hee. FIGURE 1 [Vees Ve2 | Base-Emitter-Voltage Differential mV BASE-EMITTER-VOLTAGE DIFFERENTIAL vs FREE-AIR TEMPERATURE Ver =5V I= 10 pA to 100 pA -75 ~25 25 75 125 175 Ta Free-Air Temperature C FIGURE 3 tThese curves represent the average behavior of groups of dual transistors, Unlike normal single-triode characteristics, matching characteristics of dual transistors may differ considerably in behavior from the typical. For example, a minority of devices have been observed with smaller Vee mismatch at 150C than at -65C, as opposed to the average behavior as shown in figures 2 and 3.